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STP9NM60N

STP9NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 600V 6.5A TO-220

  • 数据手册
  • 价格&库存
STP9NM60N 数据手册
STD9NM60N, STF9NM60N, STP9NM60N Datasheet N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 1 2 DPAK Order code TAB VDS RDS(on) max. ID Package 600 V 0.745 Ω 6.5 A TO-220FP STD9NM60N TO-220 1 2 3 TO-220FP 1 2 STF9NM60N 3 STP9NM60N • • • D(2, TAB) DPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications G(1) • S(3) AM01475v1_noZen Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STD9NM60N STF9NM60N STP9NM60N DS6986 - Rev 2 - September 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD9NM60N, STF9NM60N, STP9NM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Parameter DPAK, TO-220 TO-220FP Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) PTOT dv/dt (3) VISO Tj Tstg 6.5 (1) 6.5 4 Drain current (pulsed) 26 Total dissipation at TC = 25 °C 70 4 26 A (1) A (1) A 25 Peak diode recovery voltage slope W 15 V/ns Insulation withstand voltage (RMS) from all three 2.5 leads to external heat sink (t = 1 s; Tc = 25 °C) Operating junction temperature range kV -55 to 150 Storage temperature range °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 6.5 A, di/dt ≤ 400 A/μs,, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Value Parameter DPAK Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) TO-220 TO-220FP 1.79 Thermal resistance junction-pcb Unit 5 62.5 °C/W 50 1. When mounted on 1inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol DS6986 - Rev 2 Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 115 mJ page 2/24 STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. ID = 1 mA, VGS = 0 V Typ. 600 Zero gate voltage drain current IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 3.25 A VGS = 0 V, VDS = 600 V, TC = 125 °C 1 µA 100 µA 100 nA 3 4 V 0.63 0.745 Ω Typ. Max. Unit - pF (1) 2 Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 79 - pF Rg Gate input resistance f = 1 MHz, ID = 0 A - 4.8 - Ω Qg Total gate charge Qgs Gate-source charge - nC Qgd Gate-drain charge 452 VDS = 50 V, f = 1 MHz, VGS = 0 V - 30 1.45 VDD = 480 V, ID = 6.5 A, VGS = 0 to 10 V (see Figure 17. Test circuit for gate charge behavior) 17.4 - 3 9.7 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS6986 - Rev 2 Parameter Test conditions Turn-on delay time VDD = 480 V, ID = 6.5 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time (see Figure 16. Test circuit for resistive load switching times and Figure 21. Switching time waveform) Fall time Min. Typ. Max. Unit - ns 28 - 23 52.5 26.7 page 3/24 STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions ISD Source-drain current ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 6.5 A, VGS = 0 V trr Reverse recovery time ISD = 6.5 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 18. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 6.5 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 18. Test circuit for inductive load switching and diode recovery times) Min. Typ. Max. Unit 6.5 - 26 - - - 1.6 A V 264 ns 1.9 μC 14.6 A 324 ns 2.3 μC 14.2 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6986 - Rev 2 page 4/24 STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for DPAK Figure 2. Thermal impedance for DPAK GC20460 K 100 10-1 10-1 10-2 10-1 10-2 10-5 102 Figure 3. Safe operating area for TO-220FP 10-4 10-3 10-2 10-1 tp (s) Figure 4. Thermal impedance for TO-220FP K GC20940 10 -1 10 -2 10-1 10-2 10-1 10 -3 10 -4 102 Figure 5. Safe operating area for TO-220 10 -3 10 -2 10 -1 10 0 t p (s) Figure 6. Thermal impedance for TO-220 AM08162v1 on ) 10µs D S( O Li p e r m at ite io d ni by n m th is ax a R re a is ID (A) 100µs 1ms 10ms 10-1 10-2 10-1 DS6986 - Rev 2 Tj=150°C Tc=25°C S ingle puls e 102 DS (V) page 5/24 STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics curves Figure 7. Output characterisics Figure 8. Transfer characteristics AM08165v1 ID (A) VGS =10V 12 VDS =20V 12 10 10 6V 8 8 6 6 4 4 5V 2 0 AM08166v1 ID (A) 2 5 0 10 20 15 25 VDS (V) 30 Figure 9. Gate charge vs gate-source voltage AM08167v1 VGS VDS 12 VDS VDD=480V 500 ID=6.5A 2 0 4 8 6 10 VGS (V) Figure 10. Static drain-source on resistance AM08168v1 R DS (on) (Ω) VGS =10V 0.66 0.65 10 400 8 300 6 200 4 0.64 0.63 0.62 0.61 100 2 0 0 10 5 0 0 Qg 15 Figure 11. Capacitance variations 0.59 0 1 2 3 4 5 6 ID(A) Figure 12. Output capacitance stored energy AM08169v1 C (pF) 0.60 AM08170v1 Eoss (µJ) 3.5 1000 3 Cis s 100 2.5 ID=250μA 2 Cos s 1.5 1 10 0.5 1 0.1 DS6986 - Rev 2 Crs s 1 10 100 VDS (V) 0 0 100 200 300 400 500 600 VDS(V) page 6/24 STD9NM60N, STF9NM60N, STP9NM60N Electrical characteristics curves Figure 13. Normalized gate threshold voltage vs temperature Figure 14. Normalized on resistance vs temperature AM08172v1 R DS (on) AM08171v1 VGS (th) (norm) (norm) 2.1 1.10 1.9 ID=250µA 1.00 ID=3.25A 1.7 1.5 3 0.90 0.9 0.80 0.70 -50 -25 0 25 50 75 100 0.5 -50 TJ (°C) 0 TJ (°C) Figure 15. Normalized V(BR)DSS vs temperature AM08173v1 V(BR)DSS (norm) ID=1mA 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 DS6986 - Rev 2 0 25 50 75 100 TJ (°C) page 7/24 STD9NM60N, STF9NM60N, STP9NM60N Test circuits 3 Test circuits Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 19. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 21. Switching time waveform Figure 20. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS6986 - Rev 2 page 8/24 STD9NM60N, STF9NM60N, STP9NM60N Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6986 - Rev 2 page 9/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 22. DPAK (TO-252) type A package outline 0068772_A_25 DS6986 - Rev 2 page 10/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS6986 - Rev 2 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) type C2 package information 4.2 DPAK (TO-252) type C2 package information Figure 23. DPAK (TO-252) type C2 package outline 0068772_C2_25 DS6986 - Rev 2 page 12/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) type C2 package information Table 9. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS6986 - Rev 2 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) type C2 package information Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS6986 - Rev 2 page 14/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS6986 - Rev 2 page 15/24 STD9NM60N, STF9NM60N, STP9NM60N DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS6986 - Rev 2 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 16/24 STD9NM60N, STF9NM60N, STP9NM60N TO-220FP package information 4.4 TO-220FP package information Figure 27. TO-220FP package outline 7012510_Rev_12_B DS6986 - Rev 2 page 17/24 STD9NM60N, STF9NM60N, STP9NM60N TO-220FP package information Table 11. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS6986 - Rev 2 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 18/24 STD9NM60N, STF9NM60N, STP9NM60N TO-220 type A package information 4.5 TO-220 type A package information Figure 28. TO-220 type A package outline 0015988_typeA_Rev_21 DS6986 - Rev 2 page 19/24 STD9NM60N, STF9NM60N, STP9NM60N TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS6986 - Rev 2 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 20/24 STD9NM60N, STF9NM60N, STP9NM60N Ordering information 5 Ordering information Table 13. Order codes Order code Marking STD9NM60N STF9NM60N STP9NM60N DS6986 - Rev 2 9NM60N Package Packing DPAK Tape and reel TO-220FP TO-220 Tube page 21/24 STD9NM60N, STF9NM60N, STP9NM60N Revision history Table 14. Document revision history Date Version 20-Oct-2010 1 Changes First release. Removed maturity status indication from cover page. The document status is production data. 25-Sep-2018 2 Updated Section 4 Package information. Minor text changes. DS6986 - Rev 2 page 22/24 STD9NM60N, STF9NM60N, STP9NM60N Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 DS6986 - Rev 2 page 23/24 STD9NM60N, STF9NM60N, STP9NM60N IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6986 - Rev 2 page 24/24
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