STTH4L06QRL

STTH4L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description A This device uses ST Turbo 2 600 V technology and is specially suited for use as a boost diode in discontinuous or critical mode power factor correction. K A Packaged in DO-201AD it is ideal for use as freewheeling diode in power supplies and other power switching applications. K Table 1: Device summary DO-201AD Symbol Value IF(AV) 4A VRRM 600 V Features Tj (max.) 175 °C     VF (typ.) 0.9 V trr (typ.) 40 ns Ultrafast switching Low forward voltage drop Low leakage current (platinum doping) High operating junction temperature January 2017 DocID16276 Rev 2 This is information on a product in full production. 1/8 www.st.com Characteristics 1 STTH4L06 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 10 A IF(AV) Average forward current 4 A IFSM Surge non repetitive forward current 80 A Tstg Storage temperature range -65 to +175 °C 175 °C Maximum values Unit Tj tp = 8.3 ms sinusoidal Maximum operating junction temperature Table 3: Thermal parameters Symbol Rth(j-l) Rth(j-a) Parameter Junction to lead 20 Terminal length = 10 mm Junction to ambient °C/W 75 Table 4: Static electrical characteristics Symbol IR(1) Parameter Test conditions Reverse leakage current Tj = 25 °C Tj = 150 °C Tj = 25 °C VF (2) Forward voltage drop Tj = 150 °C Tj = 150 °C VR = VRRM IF = 3 A IF = 4 A Min. Typ. - - 3 - 15 100 - test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% - 0.85 1.05 - 0.90 1.10 To evaluate the maximum conduction losses, use the following equation: P = 0.92 x IF(AV) + 0.0045 x IF2(RMS) 2/8 DocID16276 Rev 2 Unit µA 1.30 Notes: (1)Pulse Max. V STTH4L06 Characteristics Table 5: Dynamic characteristics (per diode) Symbol trr IRM tfr VFP Parameter Test conditions Reverse recovery time Tj = 25 °C Reverse recovery current Tj = 150 °C Min. Typ. Max. IF = 1 A, dIF/dt = -50 A/μs, VR = 30 V - IF = 1 A, dIF/dt = -100 A/μs, VR = 30 V - 40 55 - 3 4 - 5 6.5 IF = 4 A, dIF/dt = -100 A/μs, VR = 400 V 55 Unit 75 ns A Forward recovery time IF = 4 A, dIF/dt = -100 A/μs, VFR = 1.1 x VFmax - 130 ns Forward recovery voltage IF = 4 A, dIF/dt = 100 A/μs - 7.5 V DocID16276 Rev 2 3/8 Characteristics 1.1 STTH4L06 Characteristics (curves) Figure 1: Conduction losses versus average average current (per diode) Figure 2: Forward voltage drop versus forward current P(W) 5.5 δ=0.1 δ=0.05 5.0 δ=1 δ=0.5 δ=0.2 4.5 4.0 3.5 3.0 2.5 2.0 1.5 T 1.0 IF(AV)(A) 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 δ=tp/T 3.5 4.0 tp 4.5 5.0 Figure 3: Relative variation of thermal impedance junction ambient versus pulse duration Z th(j-a) /R th(j-a) 1.0 DO-201AD L leads=10 mm 0.9 IRM(A) 20 V R=400V T j=150 °C 18 Epo xy printed circuit FR 4 copper thickness = 35 µm 0.8 Figure 4: Peak reverse recovery current versus dIF/dt (typical values) 0.7 14 0.6 12 0.5 10 0.4 8 IF = IF(AV) IF = 0.5 x IF(AV) 0.3 IF = 0.25 x IF(AV) 6 0.2 4 Single pulse 0.1 t p (s) 0.0 1.E-01 1.E+00 1.E+01 dI F/dt(A/µs) 2 1.E+02 1.E+03 0 0 Figure 5: Reverse recovery time versus dIF/dt (typical values) 500 t rr (ns) V R=400V T j=150 °C 50 100 150 200 250 300 400 450 500 Qrr (nC) V R=400V T j=150 °C 550 500 400 350 Figure 6: Reverse recovery charges versus dIF/dt (typical values) 600 450 IF = 2 x IF(AV) 450 350 IF = IF(AV) 400 300 350 IF = 0.5 x IF(AV) 250 300 IF = IF(AV) 200 IF = 0.5 x IF(AV) 250 IF = 2 x IF(AV) 200 150 150 100 100 50 dI F /dt(A/µs) 50 0 dI F/dt(A/µs) 0 0 4/8 IF = 2 x IF(AV) 16 20 40 60 80 100 120 140 160 180 200 DocID16276 Rev 2 0 20 40 60 80 100 120 140 160 180 200 STTH4L06 Characteristics Figure 7: Relative variations of dynamic parameters versus junction temperature Figure 8: Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 10 I F=IF(AV) Tj=125°C 9 8 7 6 5 4 3 2 1 dI F/dt(A/µs) 0 0 Figure 9: Forward recovery time versus dIF/dt (typical values) 40 60 80 100 120 140 160 100 200 C(pF) F=1MHz V osc=30mV RMS T j=25°C IF=IF(AV) V FR=1.1 x V F max. T j=125°C 400 180 Figure 10: Junction capacitance versus reverse voltage applied (typical values) t fr (ns) 450 20 350 300 250 10 200 150 100 50 dI F /dt(A/µs) VR(V) 0 1 0 20 40 60 80 100 120 140 160 180 200 Figure 11: Thermal resistance junction to ambient versus copper surface under lead 80 Rth(j-a) (°C/W) 10 100 1000 Figure 12: Thermal resistance versus lead length 100 Epoxy printed circuit FR 4 copper thickness = 35 µm 70 1 Rth (°C/W) 90 DO-201AD DO-201AD R th(j-a) 80 60 70 50 60 50 40 40 R th(j-l) 30 30 20 20 10 10 SCU(cm²) L lead (mm) 0 0 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 15 20 25 5.0 DocID16276 Rev 2 5/8 Package information 2 STTH4L06 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.    2.1 Epoxy meets UL94, V0 Band indicated cathode (DO-201AD) Bending method: see application note AN1471 (DO-201AD) DO-201AD package information Figure 13: DO-201AD package outline Table 6: DO-201AD package mechanical data Dimensions Ref. Millimeters Min. A B 6/8 Inches Max. Min. 9.5 25.4 Max. 0.3740 1.000 C 5.3 0.2087 D 1.3 0.0512 E 1.25 0.0492 DocID16276 Rev 2 STTH4L06 3 Ordering information Ordering information Table 7: Ordering information 4 Order code Marking STTH4L06 STTH4L06 STTH4L06RL STTH4L06 Package Weight DO-201AD 1.16 g Base qty. Delivery mode 600 Ammopack 1900 Tape and reel Revision history Table 8: Document revision history Date Revision Changes 22-Sep-2009 1 First issue. 27-Jan-2017 2 Removed DO-15 package. DocID16276 Rev 2 7/8 STTH4L06 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 8/8 DocID16276 Rev 2