STWA68N60M6
Datasheet
N-channel 600 V, 35 mΩ typ., 63 A MDmesh™ M6 Power MOSFET
in a TO-247 long leads package
Features
D(2, TAB)
Order code
VDS
RDS(on) max.
ID
STWA68N60M6
600 V
41 mΩ
63 A
•
•
Reduced switching losses
Lower RDS(on) per area vs previous generation
•
•
•
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
•
•
•
G(1)
S(3)
AM01475V1
Switching applications
LLC converters
Boost PFC converters
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to
the well-known and consolidated MDmesh family of SJ MOSFETs.
STMicroelectronics builds on the previous generation of MDmesh devices through its
new M6 technology, which combines excellent RDS(on) per area improvement with
one of the most effective switching behaviors available, as well as a user-friendly
experience for maximum end-application efficiency.
Maturity status link
STWA68N60M6
Device summary
Order code
STWA68N60M6
Marking
68N60M6
Package
TO-247 long leads
Packing
Tube
DS12067 - Rev 2 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com/Power Transistors
STWA68N60M6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at TC = 25 °C
63
A
Drain current (continuous) at TC = 100 °C
40
A
IDM (1)
Drain current (pulsed)
252
A
PTOT
Total power dissipation at TC = 25 °C
390
W
dv/dt(2)
Peak diode recovery voltage slope
15
dv/dt(3)
MOSFET dv/dt ruggedness
100
Tstg
Storage temperature range
VGS
ID
Tj
Operating junction temperature range
V/ns
-55 to 150
°C
1. Pulse width is limited by safe operating area.
2. ISD ≤ 63 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Value
Unit
0.32
°C/W
50
°C/W
Table 3. Avalanche characteristics
Symbol
DS12067 - Rev 2
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
7.5
A
1100
mJ
page 2/13
STWA68N60M6
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off-states
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Parameter
Test conditions
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
600
Unit
V
VGS = 0 V, VDS= 600 V
Zero-gate voltage
Max.
1
µA
drain current
VGS = 0 V, VDS = 600 V, TC =
125 °C(1)
100
Gate-body leakage current
VDS = 0 V, VGS = ±25 V
±5
µA
Gate threshold voltage
VDS = VGS, ID = 250 µA
4
4.75
V
35
41
mΩ
Min.
Typ.
Max.
Unit
-
4360
-
pF
-
235
-
pF
Static drain-source
3.25
VGS = 10 V, ID = 31.5 A
on-resistance
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VGS = 0 V, VDS = 100 V, f = 1
MHz
Coss
Output capacitance
Crss
Reverse transfer capacitance
-
13
-
pF
Equivalent output capacitance VGS = 0 V, VDS = 0 to 480 V
-
713
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
1.6
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 63 A,
-
106
-
nC
Qgs
Gate-source charge
VGS = 0 to 10 V
-
29
-
nC
Qgd
Gate-drain charge
(see Figure 14. Test circuit for
gate charge behavior)
-
51
-
nC
Coss eq. (1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Table 6. Switching times
Symbol
td (on)
tr
td(off)
tf
DS12067 - Rev 2
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
VDD = 300 V, ID = 30 A,
-
42
-
ns
Rise time
RG = 4.7 Ω, VGS = 10 V
-
28
-
ns
Turn-off delay time
(see Figure 13. Test circuit for
resistive load switching times
and Figure 18. Switching time
waveform)
-
130
-
ns
-
8
-
ns
Fall time
page 3/13
STWA68N60M6
Electrical characteristics
Table 7. Source-drain diode
Symbol
ISD
ISDM (1)
(2)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
63
A
Source-drain current (pulsed)
-
252
A
1.6
V
Forward on voltage
VGS = 0 V, ISD = 63 A
-
trr
Reverse recovery time
ISD = 63 A, di/dt = 100 A/µs,
-
308
ns
Qrr
Reverse recovery charge
-
4.3
µC
IRRM
Reverse recovery current
VDD = 60 V (see
Figure 15. Test circuit for
inductive load switching and
diode recovery times)
-
26
A
VSD
trr
Reverse recovery time
ISD = 63 A, di/dt = 100 A/µs,
-
504
ns
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C
-
10.8
µC
IRRM
Reverse recovery current
(see Figure 15. Test circuit for
inductive load switching and
diode recovery times)
-
38
A
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DS12067 - Rev 2
page 4/13
STWA68N60M6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
ID
(A) Operation in this area is
limited by R DS(on)
GADG210320171546SOA
AM09125v1
K
d=0.5
tp =1 μs
10 2
0.2
tp =10 μs
0.1
tp =100 μs
10 1
tp =1 ms
0.05
10
-1
0.02
0.01
TJ≤150 °C
TC=25 °C
VGS=10 V
single pulse
10 0
tp =10 ms
Zth =k *Rthj-c
d=t p /t
Single pulse
tp
t
-2
10 -1
10 -1
10 0
10 1
VDS (V)
10 2
10 -4
10
Figure 3. Output characteristics
ID
(A)
VGS =10 V
ID
(A)
VGS =9 V
VGS =8 V
150
120
VGS =7 V
60
VGS =6 V
2
4
6
8
10
VDS (V)
Figure 5. Gate charge vs gate-source voltage
VDS = 9 V
150
90
30
0
4
12
38
10
37
400
8
36
300
6
35
200
4
34
100
2
33
GADG210320171545QVG VGS
VDD = 480 V
ID = 63 A
600
VDS
20
40
60
80
100
120
0
Qg (nC)
5
6
7
8
9
VGS (V)
Figure 6. Static drain-source on-resistance
RDS(on)
(mΩ)
DS12067 - Rev 2
t p (s)
GADG240320170901TCH
180
(V)
VDS
(V)
0
0
-1
60
30
500
10
120
90
0
0
10
-2
Figure 4. Transfer characteristics
GADG210320171544OCH
180
10
-3
32
0
GADG210320171543RID
VGS = 10 V
10
20
30
40
50
60
ID (A)
page 5/13
STWA68N60M6
Electrical characteristics (curves)
Figure 7. Capacitance variations
C
(pF)
Figure 8. Normalized gate threshold vs. temperature
VGS(th)
(norm.)
GADG210320171544CVR
GADG210320171542VTH
ID =250 A
1.1
10 4
Ciss
10 3
10 2
1.0
0.9
Coss
f = 1 MHz
0.8
0.7
10 1
10 -1
10 0
10 1
Crss
VCE (V)
10 2
Figure 9. Normalized on-resistance vs. temperature
RDS(on)
(norm.)
GADG210320171543RON
2.5
0.6
-75
V(BR)DSS
(norm.)
1.05
1.5
1.00
1.0
0.95
0.5
0.90
-25
25
75
125
TJ (°C)
Figure 11. Output capacitance stored energy
EOSS
(µJ)
GADG210320171545EOS
TJ (°C)
0.85
-75
ID = 1 mA
-25
25
75
125
TJ (°C)
Figure 12. Source-drain diode forward characteristics
VSD
(V)
GADG210320171544SDF
Tj = -50 °C
1.0
30
0.9
Tj = 25 °C
0.8
20
Tj = 150 °C
0.7
10
DS12067 - Rev 2
125
1.1
40
0
0
75
GADG210320171543BDV
1.10
VGS = 10 V
25
Figure 10. Normalized V(BR)DSS vs. temperature
2.0
0.0
-75
-25
0.6
100
200
300
400
500
600
VDS (V)
0.5
0
10
20
30
40
50
60
ISD (A)
page 6/13
STWA68N60M6
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
Figure 14. Test circuit for gate charge behavior
VDD
RL
RL
2200
+ μF
3.3
μF
VDD
VD
RG
VGS
IG= CONST
VGS
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
L
A
VD
100 µH
fast
diode
B
B
B
3.3
µF
D
G
+
Figure 16. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 18. Switching time waveform
Figure 17. Unclamped inductive waveform
ton
V(BR)DSS
td(on)
toff
td(off)
tr
tf
VD
90%
90%
IDM
VDD
10%
0
ID
VDD
AM01472v1
VGS
0
VDS
10%
90%
10%
AM01473v1
DS12067 - Rev 2
page 7/13
STWA68N60M6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS12067 - Rev 2
page 8/13
STWA68N60M6
TO-247 long leads package information
4.1
TO-247 long leads package information
Figure 19. TO-247 long leads package outline
8463846_2_F
DS12067 - Rev 2
page 9/13
STWA68N60M6
TO-247 long leads package information
Table 8. TO-247 long leads package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
DS12067 - Rev 2
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
6.25
page 10/13
STWA68N60M6
Revision history
Table 9. Document revision history
Date
Revision
03-Apr-2017
1
Changes
First release.
Removed maturity status indication from cover page. The document status is production data.
Modified Table 1. Absolute maximum ratings, Table 5. Dynamic and Table 7. Source-drain diode
05-Nov-2018
2
Modified Figure 1. Safe operating area, Figure 3. Output characteristics, Figure 4. Transfer
characteristics, Figure 5. Gate charge vs gate-source voltage, Figure 6. Static drain-source onresistance, Figure 7. Capacitance variations, Figure 8. Normalized gate threshold vs. temperature,
Figure 9. Normalized on-resistance vs. temperature, Figure 10. Normalized V(BR)DSS vs.
temperature and Figure 12. Source-drain diode forward characteristics.
Minor text changes.
DS12067 - Rev 2
page 11/13
STWA68N60M6
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS12067 - Rev 2
page 12/13
STWA68N60M6
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DS12067 - Rev 2
page 13/13