T1020W

® T1020W T1030W SNUBBERLESS TRIAC FEATURES ITRMS = 10 A VDRM = VRRM = 400V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Parameter Tc= 90°C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2 t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Parameter 400 VDRM VRRM November 1996 A2 A1 G A1 A2 G ISOWATT220AB (Plastic) Value 10 110 125 78 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A A2s A/µs °C °C Symbol T1020 / 1030-xxxW 600 600 700 700 800 800 Unit Repetitive peak off-state voltage Tj = 125°C 400 V 1/5 T1020W / 1030W THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360 ° conduction angle) Parameter Value 50 3.0 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA dlG/dt= 3Aµs IT= 100mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Tj= 125°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1020 20 1.5 0.2 2 50 V µA mA V/µs V/µs T1030 30 Unit mA V V µs IGM = 4 A (tp = 20 µs) ITM= 14A tp= 380µs VDRM rated VRRM rated Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T1020W / T1030W triacs. 2/5 ® T1020W / 1030W Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 14 12 10 Tcase (o C) Rth = 0 o C/W 2.5 o C/W o 5 C/W 7 o C/W = 180 = 120 = 90 o o o 14 12 10 8 -85 -95 8 6 4 2 0 0 1 = 60 = 30 o o -105 6 4 -115 Tamb (oC) 10 20 30 40 50 60 70 80 90 100 110 120 130 I T(RMS) (A) 2 3 4 5 6 7 8 9 10 2 0 0 -125 Fig.3 : RMS on-state current versus case temperature. Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth 1 Zth (j-c) 12 10 8 6 4 2 0 I T(RMS) (A) = 180 o 0.1 Zt h( j-a) 0.01 Tcase( C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1E +0 1E +1 o tp (s) 1 E+2 5 E +2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 120 100 80 60 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj initial = 25 C o Ih 40 20 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 ® T1020W / 1030W Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Fig.8 : On-state characteristics (maximum values). I TM (A) Tj initial = 25oC 1000 1000 I TSM 100 It 2 100 Tj initial o 25 C 10 10 Tj max Tj max Vto =0.9V Rt =0.038 tp(ms) VTM (V) 1 1 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 4/5 ® T1020W / 1030W PACKAGE MECHANICAL DATA ISOWATT220AB REF. A B B1 C D E H I J L M N N1 O P DIMENSIONS Millimeters Inches Min. 10 15.9 9.8 28.6 16 typ 9 4.4 3 2.5 0.4 2.5 4.95 2.4 1.15 0.75 9.3 4.6 3.2 2.7 0.7 2.75 5.2 2.7 1.7 1 Max. 10.4 16.4 10.6 30.6 Min. 0.393 0.626 0.385 1.126 0.630 0.354 0.173 0.118 0.098 0.015 0.098 0.195 0.094 0.045 0.030 Max. 0.409 0.645 0.417 1.204 typ 0.366 0.181 0.126 0.106 0.027 0.108 0.204 0.106 0.067 0.039 Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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