TM8050H-8W

TM8050H-8W Datasheet 80 A 800 V high temperature thyristor (SCR) in TO-247 package Features A G K TAB = A K A G TO-247 uninsulated • High junction temperature: Tj = 150 °C • Blocking voltage: VDRM = VRRM = 800 V • Nominal current: IT(RMS) = 80 A • Gate triggering current: IGT max. = 50 mA • • • High noise immunity: dV/dt > 1 kV/µs Through hole package TO-247 Increase of thermal margin due to extended Tj up to 150 °C • Low ID and IR in blocking state • Ecopack2 (includes halogen free & RoHS compliance) Applications • • • • • • • Product status link TM8050H-8W Product summary IT(RMS) 80 A VDRM/VRRM 800 V IGT 50 mA Tj 150 °C AC-DC rectifier controlled bridge Variable speed motor drive Battery charging system AC solid state relay By pass switch of UPS Industrial welding systems Motor soft starter systems Description Available in through hole package TO-247, the TM8050H-8W is an 800 V SCR thyristor suitable for applications where high power switching (IT(RMS) = 80 A) and low power dissipation (VTM = 1.55 V at 160 A) are key features. These features make it ideal for motorbike voltage regulator, by-pass AC switch, controlled rectifier bridge, solid state relay, battery charger, welding equipment and motor driver applications. DS11583 - Rev 2 - August 2019 For further information contact your local STMicroelectronics sales office. www.st.com TM8050H-8W Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current, VR = 0 V I2t VRRM / VDRM TC = 126 °C tp = 8.3 ms tp = 10 ms Unit 80 A 50 A 731 Tj initial = 25 °C 670 Tj = 25 °C I2t value for fusing Value Maximum repetitive symmetric blocking voltage A 2245 A2s 800 V dl/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns f = 50 Hz Tj = 25 °C 200 A/µs IGM Peak gate current tp = 20 µs Tj = 150 °C 8 A Tj = 150 °C 1 W PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Maximum operating junction temperature -40 to +150 °C Tj Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Test Conditions Value Unit Min. 2.5 Max. 50 Max. 1.5 V Min. 0.2 V IT = 500 mA, gate open Max. 100 mA IL IG = 1.2 x IGT Max. 125 mA tgt IT = 80 A, VD = VDRM, IG = 200 mA, dIG/dt = 0.2 A/µs Typ. 3 µs IGT VD = 12 V, RL = 33 Ω VGT VD = 12 V, RL = 33 Ω VGD VD = VDRM, RL = 3.3 kΩ IH dV/dt tq Tj = 150 °C mA VD = 67 % VDRM, gate open Tj = 150 °C Min. 1000 V/µs IT = 33 A, dIT/dt = 10 A/µs, VR = 75 V, VD = 400 V, dVD/dt = 20 V/µs, tP = 100 µs Tj = 150 °C Max. 150 µs Table 3. Static characteristics Symbol Value Unit VTM ITM = 160 A, tp = 380 µs Tj = 25 °C Max. 1.55 VTO On state threshold voltage Tj = 150 °C Max. 0.85 RD On state dynamic resistance Tj = 150 °C Max. 5.5 mΩ Tj = 25 °C Max. 20 µA Tj = 150 °C Max. 2.5 mA IDRM IRRM DS11583 - Rev 2 Test conditions VD = VDRM = VR = VRRM = 800 V V page 2/10 TM8050H-8W Characteristics Table 4. Thermal parameters Symbol DS11583 - Rev 2 Parameter Rth(j-c) Junction to case (DC,max.) Rth(j-a) Junction to ambient DC (typ.) Value 0.30 50 Unit °C/W page 3/10 TM8050H-8W Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average and DC on-state current versus case temperature P(W) 90 IT(AV) (A) D.C α = 180 ° 80 80 α = 120 ° α = 90° 70 70 α = 60 ° α = 60° 60 60 α = 30 ° 50 50 40 40 30 30 D.C α = 180 ° α = 120 ° α = 30 ° 20 20 10 10 IT(AV) (A) Tc (°C) 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 0 65 Figure 3. Average and D.C. on state current versus ambient temperature 4.5 α = 90 ° IT(AV) (A) 25 50 75 100 125 150 Figure 4. On-state characteristics (maximum values) ITM(A) 1000 4.0 3.5 D.C 100 3.0 2.5 α = 180 ° 2.0 1.5 10 1.0 0.5 VTM (V) 0.0 0 25 50 75 100 125 1 150 Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration 1.0E+00 Tj max : VTO = 0.85 V Rd = 5.5m Ω Tj = 25 °C Tj = 150 °C TA (°C) 0.0 1.0 2.0 3.0 4.0 Figure 6. Relative variation of gate trigger current and gate voltage versus junction temperature K = [Zth/Rth] 2.0 IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C] Zth(j -c) Zth(j -a) IGT 1.5 1.0E-01 1.0 VGT 0.5 Tj(°C) tp(s) 1.0E-02 1.0E-03 DS11583 - Rev 2 0.0 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 -50 -25 0 25 50 75 100 125 150 page 4/10 TM8050H-8W Characteristics (curves) Figure 7. Relative variation of holding current and latching current versus junction temperature (typical values) 2.0 Figure 8. Surge peak on state current versus number of cycles IH, IL[Tj]/ IH, IL[Tj = 25 °C] 750 ITSM(A) 700 650 1.8 600 550 IH 1.5 VR = 0 V Non repetitive Tj initial = 25 °C 500 450 1.3 400 IL 1.0 350 300 Repetitive Tc = 126 °C 250 0.8 200 150 0.5 100 0.3 Number of cycles 50 Tj(°C) 0.0 0 1 -50 -25 0 25 50 75 100 125 Figure 9. Non repetitive surge peak on state current for a half cycle sine pulse versus pulse width tp < 10 ms dI/dt limitation: 200 A/µs 100 1000 Figure 10. Relative variation of leakage current versus junction temperature for different values of blocking voltage ITSM(A) 10000 10 150 1.0E+00 Tj initial = 25 °C VR = 0 V IDRM, IRRM[Tj; VDRM, VRRM]/ IDRM, IRRM[150°C; 800 V] VDRM = VRRM = 800 V (maximum values) ITSM 1.0E-01 1000 1.0E-02 VDRM = VRRM = 800 V 1.0E-03 100 (typical values) VDRM = VRRM = 600 V 1.0E-04 (typical values) tP(ms) Tj(°C) 10 0.01 0.10 1.00 1.0E-05 10.00 25 50 75 100 125 150 Figure 11. Relative variation of static dV/dt immunity versus junction temperature (typical values) 5 dV/dt[Tj]/dV/dt[Tj = 150 °C] VD = 0.67 x VDRM 4 3 2 1 Tj(°C) 0 10 DS11583 - Rev 2 30 50 70 90 110 130 150 page 5/10 TM8050H-8W Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-247 package information • • • Epoxy meets UL 94,V0 Recommended torque value: 0.8 N·m Maximum torque value: 1 N·m Figure 12. TO-247 package outline 0075325_9 DS11583 - Rev 2 page 6/10 TM8050H-8W TO-247 package information Table 5. TO-247 package mechanical data Dimensions Dim. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.1909 0.2028 A1 2.20 2.60 0.0866 0.1024 b 1.0 1.40 0.0394 0.0551 b1 2.0 2.40 0.0787 0.0945 b2 3.0 3.40 0.1181 0.1339 c 0.40 0.80 0.0157 0.0315 D(2) 19.85 20.15 0.7815 0.7933 E 15.45 15.75 0.6083 0.6201 e 5.30 5.60 0.2087 L 14.20 14.80 0.5591 0.5827 L1 3.70 4.30 0.1457 0.1693 L2 5.45 18.50 ØP(3) 3.55 ØR 4.50 S 5.30 5.50 0.2146 0.2205 0.7283 3.65 0.1398 5.50 0.1772 5.70 0.2087 0.1437 0.2165 0.2165 0.2244 1. Inch dimensions given only for reference 2. Dimension D plus gate protrusion does not exceed 20.5 mm 3. Resin thickness around the mounting hole is not less than 0.9 mm DS11583 - Rev 2 page 7/10 TM8050H-8W Ordering information 3 Ordering information Figure 13. Ordering information scheme TM 80 50 H - 8 W Series Thyristor RMS current 80 = 80 A IGT current 50 = 50 mA Maximum junction temperature H = 150 °C Voltage 8 = 800 V Package W = TO-247 Table 6. Ordering information DS11583 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode TM8050H-8W TM8050H8 TO-247 4.43 g 30 Tube page 8/10 TM8050H-8W Revision history Table 7. Document revision history DS11583 - Rev 2 Date Revision Changes 03-May-2016 1 Initial release. 08-Aug-2019 2 Updated Table 1, Figure 8 and Figure 9. Minor text change. page 9/10 TM8050H-8W IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11583 - Rev 2 page 10/10