TN4015H-6I

TN4015H-6I High temperature 40 A SCRs Datasheet - production data Applications     Motorbike voltage regulator circuits Inrush current limiting circuit Motor control circuits and starters Solid state relays Description Thanks to its junction temperature Tj up to 150 °C, the device offers high thermal performances operation up to 40 A. It is fully tab insulated thanks to the ceramic inside the TO-220AB package and allows a back to back configuration. Features         High junction temperature: Tj = 150 °C High noise immunity dV/dt = 500 V/µs up to 150 °C Gate triggering current IGT = 15 mA Peak off-sate voltage 600 V VDRM/VRRM High turn on current rise dI/dt = 100 A/µs ECOPACK®2 compliant component Insulated package TO-220AB:  Insulated voltage: 2500 VRMS Complies with UL 1557 (File ref : E81734) November 2016 Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits. Table 1: Device summary Order code Package VDRM/VRRM IGT TN4015H-6I TO-220AB ins. 600 V 15 mA DocID029569 Rev 2 This is information on a product in full production. 1/9 www.st.com Characteristics 1 TN4015H-6I Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit Tc = 82 °C 40 A Tc = 83 °C 25 Tc = 94 °C 22 Tc = 101 °C 20 tp = 8.3 ms 394 tp = 10 ms 360 I2t value for fusing tp = 10 ms 648 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz 100 A/µs Tj = 150 °C 600 V Non repetitive surge peak off-state voltage tp = 10 ms VDRM/VRRM + 100 V Peak gate current Tj = 150 °C 4 A Tj = 150 °C 1 W IT(RMS) RMS on-state current (180 ° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM I2 t dl/dt VDRM/VRRM VDSM/VRSM IGM Non repetitive surge peak on-state current Repetitive peak off-state voltage tp = 20 µs A A PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C TL Maximum lead temperature soldering during 10 s 260 °C Table 3: Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VGT VD = 12 V, RL = 33 Ω Value Unit Max. 15 mA Max. 1.3 V Min. 0.15 V VGD VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 60 mA IL IG = 1.2 x IGT Max. 80 mA Min. 500 V/µs dV/dt 2/9 Test Conditions VD = 402 V, gate open Tj = 150 °C Tj = 150 °C tgt IT = 80 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs Typ. 1.9 µs tq VD = 402 V, IT = 40 A, VR = 25 V, dVD/dt = 50 V/µs, (dIG/dt) max = 30 A/µs Typ. 85 µs DocID029569 Rev 2 Tj = 150 °C TN4015H-6I Characteristics Table 4: Static characteristics Symbol Test conditions Value Unit VTM ITM = 80 A, tp = 380 µs Tj = 25 °C Max. 1.6 VTO Threshold voltage Tj = 150 °C Max. 0.85 RD Dynamic resistance Tj = 150 °C Max. 10 mΩ 10 µA 6 mA Value Unit Tj = 25 °C IDRM, IRRM VD = VDRM = VRRM Max. Tj = 150 °C V Table 5: Thermal parameters Symbol Parameter Rth(j-c) Junction to case (DC) Max. 1.8 Rth(j-a) Junction to ambient (DC) Typ. 60 DocID029569 Rev 2 °C/W 3/9 Characteristics 1.1 TN4015H-6I Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and DC on-state current versus case temperature P(W) 40 50 α = 180° α = 120° IT(AV) (A) D.C α = 30 ° α = 60 ° α = 90° α = 120° α = 180° D.C α = 90 ° 40 α = 60° 30 α = 30° 30 20 20 10 360° 10 α 0 0 0 5 10 15 20 IT(AV)(A) 25 30 0 35 25 50 75 100 125 150 TC(°C) Figure 3: Average and D.C. on state current versus ambient temperature IT(AV) (A) Figure 4: Relative variation of thermal impedance versus pulse duration 1.0E+00 3.0 K = [Zth /Rth ] Z th(j-c) 2.5 Z th(j-a) D.C 1.0E-01 2.0 α = 180 ° 1.5 1.0E-02 1.0 0.5 0.0 0 25 50 75 Ta (°C) 100 125 150 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tp (s) Figure 5: Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) 2.5 1.0E-03 1.0E-03 IGT , VGT [Tj ] / IGT , VGT [Tj = 25 °C] Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) 2.5 IH , IL [Tj ] / IH , IL [Tj = 25 °C] 2.3 I 2.0 GT 2.0 IH 1.8 1.5 1.5 1.3 1.0 VGT 1.0 IL 0.8 0.5 0.5 0.3 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 Tj(°C) 4/9 -25 0 25 50 Tj(°C) DocID029569 Rev 2 75 100 125 150 TN4015H-6I Characteristics Figure 7: Relative variation of static dV/dt immunity versus junction temperature (typical values) 12 Figure 8: Surge peak on-state current versus number of cycles dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ] ITSM (A) 450 VD = 402 V 11 400 10 9 tp=10ms 350 Above test equipment capability One cycle 8 300 7 250 Repetitive 6 5 200 4 150 3 Non repetitive Tj initial = 25 °C Tc = 82 °C 100 2 50 1 0 0 90 95 100 105 110 115 120 125 130 135 1 140 145 150 10 Tj (°C) ITSM (A) 1000 Figure 10: On-state characteristics (maximum values) Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 100 Number of cycles 1000 ITM (A) Tj initial = 25 °C dI/dt limitation: 100 A/µs ITSM 1000 100 100 10 Tj = 150 °C 10 0.01 Tj max : VTO = 0.85 V Rd = 10 mΩ Tj = 25 °C 1 0.10 1.00 10.00 0.0 1.0 2.0 tp (ms) 3.0 4.0 VT M (V) Figure 11: Relative variation of leakage current versus junction temperature IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V] 1.0E+00 VDRM = VRRM = 600 V 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25 50 75 Tj (°C) DocID029569 Rev 2 100 125 150 5/9 Package information 2 TN4015H-6I Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.   2.1 Epoxy meets UL94, V0 Lead-free, halogen-free package TO-220AB insulated package information Figure 12: TO-220AB insulated package outline 6/9 DocID029569 Rev 2 TN4015H-6I Package information Table 6: TO-220AB insulated package mechanical data Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.4 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 ØI 3.73 3.88 0.1469 0.1528 I4 15.80 16.8 0.6220 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 M 16.40 2.60 DocID029569 Rev 2 0.6457 0.6614 0.1024 7/9 Ordering information 3 TN4015H-6I Ordering information Figure 13: Ordering information scheme TN 40 15 H - 6 I Series TN = SCR Current 40 = 40 A Gate sensitivity 15 = 15 m A High temperature H = 150 °C Voltage 6 = 600 V Package I = TO-220AB insulated Packing mode Blank = tube Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode TN4015H-6I TN4015H6I TO-220AB Ins. 2.3 g 50 Tube Revision history Table 8: Document revision history 8/9 Date Revision Changes 05-Oct-2016 1 Initial release. 25-Nov-2016 2 Updated cover image. DocID029569 Rev 2 TN4015H-6I IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID029569 Rev 2 9/9