TN4015H-6T

TN4015H-6T Datasheet 40 A 600 V 150 °C junction temperature SCR in TO-220AB package Features A2 G A1 A2 A1 G A2 • High junction temperature : Tj = 150 °C • • High noise immunity dV/dt = 500 V/µs up to 150 °C Gate triggering current IGT = 15 mA • Off-state voltage 600 V VDRM/VRRM • • High turn on current rise dI/dt = 100 A/µs ECOPACK2 compliant component Applications • • • • TO-220AB Motorbike voltage regulator circuits Inrush current limiting circuit Motor control circuits and starters Solid state relays Description The TN4015H-6T in non-isolated TO-220AB package offers high thermal performances up to 40 A, thanks to its junction temperature up to 150°C. Product status link TN4015H-6T Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (IGT = 15 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits. Product summary IT(RMS) 40 A VDRM/VRRM 600 V VDSM/VRSM 800 V IGT 15 mA Package TO-220AB DS11764 - Rev 2 - December 2021 For further information contact your local STMicroelectronics sales office. www.st.com TN4015H-6T TN4015H-6T_Characteristics 1 TN4015H-6T_Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Value Unit Tc = 119 °C 40 A Tc = 120 °C 25 Tc = 125 °C 22 Tc = 128 °C 20 tp = 8.3 ms 394 tp = 10 ms 360 I2t value for fusing tp = 10 ms 648 A2s Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns f = 60 Hz 100 A/µs VDRM/VRRM Repetitive peak off-state voltage Tj = 150 °C 600 V VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms 800 V Tj = 150 °C 4 A Tj = 150 °C 1 W IT(RMS) IT(AV) ITSM I2t dl/dt IGM Parameter RMS on-state current (180 ° conduction angle) Average on-state current (180 ° conduction angle) Non repetitive surge peak on-state current Peak gate current tp = 20 µs A A PG(AV) Average gate power dissipation VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -40 to +150 °C Tj Maximum operating junction temperature -40 to +150 °C TL Maximum lead temperature soldering during 10 s 260 °C Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol IGT VGT VD = 12 V, RL = 33 Ω Unit Max. 15 mA Max. 1.3 V Min. 0.15 V VD = VDRM, RL = 3.3 kΩ IH IT = 500 mA, gate open Max. 60 mA IL IG = 1.2 x IGT Max. 80 mA Min. 500 V/µs VD = 402 V, gate open Tj = 150 °C Value VGD dV/dt DS11764 - Rev 2 Test Conditions Tj = 150 °C tgt IT = 80 A, VD = 600 V, IG = 100 mA, (dIG/dt) max = 0.2 A/µs Typ. 1.9 µs tq VD = 402 V, IT = 40 A, VR = 25 V, dVD/dt = 50 V/µs, (dIG/dt)max = 30 A/µs Typ. 85 µs Tj = 150 °C page 2/10 TN4015H-6T TN4015H-6T_Characteristics Table 3. Static characteristics Symbol Test conditions Value Unit VTM ITM = 80 A, tp = 380 µs Tj = 25 °C Max. 1.6 VTO Threshold voltage Tj = 150 °C Max. 0.85 RD Dynamic resistance Tj = 150 °C Max. 10 mΩ IDRM, IRRM VD = VDRM = VRRM 10 µA 6 mA Tj = 25 °C Tj = 150 °C Max. V Table 4. Thermal parameters Symbol DS11764 - Rev 2 Parameter Value Rth(j-c) Junction to case (DC) Max. 0.8 Rth(j-a) Junction to ambient (DC) Typ. 60 Unit °C/W page 3/10 TN4015H-6T Characteristics (curves) 1.1 Characteristics curves Figure 1. Maximum average power dissipation versus average on-state current Figure 2. Average and DC on-state current versus case temperature P(W) 40 α = 180 ° α = 120 ° α = 30 ° α = 60 ° α = 90 ° 30 IT(AV) (A) 50 D.C α = 120 ° α = 180 ° D.C α = 90 ° 40 α = 60 ° α = 30 ° 30 20 20 10 360° 10 α 0 0 0 5 10 15 20 IT(AV)(A) 25 30 35 25 50 75 100 125 150 TC(°C) Figure 3. Average and D.C. on state current versus ambient temperature 3.0 0 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 IT(AV) (A) K = [Zth /Rth ] Z th(j-c) 2.5 D.C Z th(j-a) 1.0E-01 2.0 α = 180 ° 1.5 1.0E-02 1.0 0.5 1.0E-03 0.0 0 25 50 75 Ta (°C) 100 125 Figure 5. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) 2.5 IGT , VGT [Tj ] / IGT , VGT [Tj = 25 °C] I 2.0 1.0E-03 150 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 tp (s) Figure 6. Relative variation of holding and latching current versus junction temperature (typical values) 2.5 IH , IL [Tj ] / IH , IL [Tj = 25 °C] 2.3 GT 2.0 IH 1.8 1.5 1.5 1.3 1.0 VGT 1.0 IL 0.8 0.5 0.5 0.3 0.0 -50 -25 DS11764 - Rev 2 0 25 50 Tj(°C) 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tj(°C) page 4/10 TN4015H-6T Characteristics (curves) Figure 7. Relative variation of static dV/dt immunity versus junction temperature 12 Figure 8. Surge peak on-state current versus number of cycles dV/dt [ Tj ] / dV/dt [ Tj = 150 °C ] VD = 402 V 11 450 10 ITSM (A) 400 9 Above test equipment capability tp=10ms Non repetitive Tj initial = 25 °C 350 8 One cycle 300 7 6 250 5 200 4 3 150 2 100 1 Repetitive Tc = 119 °C 50 0 90 95 100 105 110 115 120 125 130 135 140 145 0 150 1 Tj (°C) 100 1000 Numberofofcycle cycles Number Figure 9. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 10 Figure 10. On-state characteristics (maximum values) 1000 ITSM (A) ITM (A) Tj initial = 25 °C dI/dt limitation: 100 A/µs ITSM 100 1000 10 100 Tj = 150 °C 10 0.01 Tj max : VTO = 0.85 V Rd = 10 mΩ Tj = 25 °C 1 0.10 tp (ms) 1.00 0.0 10.00 1.0 2.0 VT M (V) 3.0 4.0 Figure 11. Relative variation of leakage current versus junction temperature IDRM , IRRM [Tj; VDRM , VRRM ] / IDRM , IRRM [150 °C; 600 V] 1.0E+00 VDRM = VRRM = 600 V 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25 DS11764 - Rev 2 50 75 Tj (°C) 100 125 150 page 5/10 TN4015H-6T Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 TO-220AB package information • • • Molding compound resin is halogen free and meets UL94 flammability standard, level V0 Lead-free plating package leads Recommended torque: 0.4 to 0.6 N·m Figure 12. TO-220AB package outline DS11764 - Rev 2 page 6/10 TN4015H-6T TO-220AB package information Table 5. TO-220AB package mechanical data Dimensions Min. A Inches(1) Millimeters Ref. Typ. 15.20 a1 Max. Min. 15.90 0.5984 3.75 Typ. Max. 0.6260 0.1476 a2 13.00 14.00 0.5118 0.5512 B 10.00 10.40 0.3937 0.4094 b1 0.61 0.88 0.0240 0.0346 b2 1.23 1.32 0.0484 0.0520 C 4.40 4.60 0.1732 0.1811 c1 0.49 0.70 0.0193 0.0276 c2 2.40 2.72 0.0945 0.1071 e 2.40 2.70 0.0945 0.1063 F 6.20 6.60 0.2441 0.2598 I 3.73 3.88 0.1469 0.1528 L 2.65 2.95 0.1043 0.1161 I2 1.14 1.70 0.0449 0.0669 I3 1.14 1.70 0.0449 0.0669 I4 15.80 16.80 0.6220 M 16.40 2.6 0.6457 0.6614 0.1024 1. Inch dimensions are for reference only. DS11764 - Rev 2 page 7/10 TN4015H-6T TN4015H-6T_Ordering information 3 Ordering information Figure 13. Ordering information scheme TN 40 15 H 6 T Series TN = SCR Current 40 = 40 A Gate sensitivity 15 = 15 m A High temperature Voltage 6 = 600 V Package T=TO-220AB Packing mode Blank = tube Table 6. Ordering information DS11764 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode TN4015H-6T TN4015H6 TO-220AB 2.3 g 50 Tube page 8/10 TN4015H-6T Revision history Table 7. Document revision history DS11764 - Rev 2 Date Revision Changes 03-Aug-2016 1 Initial release. 10-Dec-2021 2 Updated Table 1. page 9/10 TN4015H-6T IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS11764 - Rev 2 page 10/10