VN770K

® VN770K QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS TYPE VN770K RDS(on) 220mΩ (*) IOUT 9A (**) VCC 36V (*) Total resistance of one side in bridge configuration (**) Typical current limitation value SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION s VERY LOW STAND-BY POWER DISSIPATION s SHORT CIRCUIT PROTECTED s STATUS FLAG DIAGNOSTIC (OPEN DRAIN) s INTEGRATED CLAMPING CIRCUITS s UNDERVOLTAGE PROTECTION s s s SO-28 ESD PROTECTION to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower™ technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. DESCRIPTION The VN770K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower™ M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shutdown PIN FUNCTION No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 DIAGNOSTIC INPUT 2 DRAIN 4 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3 FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Diagnostic of Switches 1 and 2 (high-side switches) Input of Switch 2 (high-side switch) Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch) December 2002 1/20 VN770K BLOCK DIAGRAM Vcc Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE GND INPUT1 DIAG DRIVER 1 CLAMP 1 SOURCE1 CLAMP 2 CURRENT LIMITER 1 OVERTEMP. 1 LOGIC OPENLOAD ON 1 DRIVER 2 SOURCE2 CURRENT LIMITER 2 OPENLOAD OFF 1 OPENLOAD ON 2 INPUT2 OPENLOAD OFF 2 OVERTEMP. 2 Overvoltage Clamp DRAIN3 INPUT3 Gate Control SOURCE3 Over Temperature Linear Current Limiter Overvoltage Clamp DRAIN4 INPUT4 Gate Control SOURCE4 Over Temperature Linear Current Limiter 2/20 VN770K CONNECTION DIAGRAM THERMAL DATA Symbol Rthj-case Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case (High-side switch) Thermal Resistance Junction-case (Low-side switch) Thermal Resistance Junction-ambient MAX MAX MAX Value 20 20 60 Unit °C/W °C/W °C/W ABSOLUTE MAXIMUM RATING DUAL HIGH SIDE SWITCH Symbol VCC - VCC - IGND IOUT - IOUT IIN Istat Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT - STATUS - OUTPUT Ptot Tj Tc Tstg - VCC Power Dissipation (TC=25°C) Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA 4000 4000 5000 5000 6 Internally Limited - 40 to 150 - 55 to 150 V V V V W °C °C °C 3/20 VESD VN770K ABSOLUTE MAXIMUM RATING (continued) LOW SIDE SWITCH Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only (R=330Ω, C=150pF) Power Dissipation (TC=25°C) Operating Junction Temperature Case Operating Temperature Storage Temperature Value Internally Clamped Internally Clamped +/-20 150 Internally Limited -10.5 4000 16500 6 Internally limited Internally limited -55 to 150 Unit V V mA Ω A A V V W °C °C °C ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V < VCC < 36V; -40°C < Tj < 150°C, unless otherwise specified) POWER OUTPUTS (Per each channel) Symbol VCC (**) VUSD (**) VOV (**) RON Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 160 12 12 5 0 -75 320 40 25 7 50 0 5 3 Unit V V V mΩ mΩ µA µA mA µA µA µA µA IOUT=1A; Tj=25°C IOUT=1A; VCC>8V Off State; VCC=13V; VIN=VOUT=0V Off State; VCC=13V; VIN=VOUT=0V; Tj=25°C On State; VCC=13V; VIN=5V; IOUT=0A VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; Vcc=13V; Tj =125°C VIN=VOUT=0V; Vcc=13V; Tj =25°C IS (**) Supply Current IL(off1) IL(off2) IL(off3) IL(off4) (**) Per device Off State Off State Off State Off State Output Current Output Current Output Current Output Current SWITCHING (VCC=13V) Symbol td(on) td(off) dVOUT/ dt(on) dVOUT/ dt(off) Parameter Turn-on Delay Time Turn-off Delay Time Turn-on Voltage Slope Test Conditions RL=13Ω from VIN rising edge to VOUT=1.3V RL=13Ω from VIN falling edge to VOUT=11.7V RL=13Ω from VOUT=1.3V to VOUT=10.4V RL=13Ω from VOUT=11.7V to VOUT=1.3V Min Typ 30 30 See relative diagram See relative diagram Max Unit µs µs V/µs Turn-off Voltage Slope V/µs 4/20 VN770K ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) LOGIC INPUT Symbol VIL IIL VIH IIH Vhyst VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V VIN = 3.25V IIN = 1mA IIN = -1mA 0.5 6 6.8 -0.7 Min 1 3.25 10 8 Typ Max 1.25 Unit V µA V µA V V V STATUS PIN Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT= 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT= 1mA Status Clamp Voltage ISTAT= - 1mA Min Typ Max 0.5 10 100 6 6.8 -0.7 8 Unit V µA pF V V PROTECTIONS Symbol TTSD TR Thyst tsdl Ilim Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Current limitation Turn-off Output Clamp Voltage Test Conditions Min 150 135 7 Typ 175 15 20 7 8 10 13 13 13 VCC-41 VCC-48 VCC-55 Max 200 Unit °C °C °C µs A A A V Tj>TTSD Tj=125° C 5.5V TTSD) L H L X X H H L H H L OVER TEMP STATUS TIMING Tj > TTSD VINn OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VOUT> VOL VINn VSTAT n VSTAT n tSDL tDOL(off) tDOL(on) tSDL 8/20 1 VN770K TYPICAL APPLICATION DIAGRAM 9/20 VN770K Figure 1: Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC INPUTn OUTPUT VOLTAGEn STATUSn undefined VUSD VUSDhyst OVERVOLTAGE VCCV OV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn OUTPUT VOLTAGEn STATUSn VOUT>VOL VOL OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj INPUTn OUTPUT CURRENTn STATUSn TTSD TR 10/20 1 VN770K ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH Off State Output Current IL(off1) (µA) 1.6 1.44 1.28 1.12 0.96 0.8 0.64 0.48 0.32 0.16 0 -50 -25 0 25 50 75 100 125 150 175 High Level Input Current Iih (µA) 5 4.5 Off state Vcc=36V Vin=Vout=0V Vin=3.25V 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (ºC) Input Clamp Voltage Vicl (V) 8 7.75 Status Leakage Current Ilstat (µA) 0.03 0.0275 Iin=1mA 7.5 7.25 7 6.75 0.025 0.0225 0.02 0.0175 0.015 0.0125 0.01 Vstat=5V 6.5 6.25 0.0075 0.005 0.0025 6 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (ºC) Status Low Output Voltage Vstat (V) 1 0.9 Status Clamp Voltage Vscl (V) 8 7.75 Istat=1.6mA 0.8 0.7 0.6 0.5 0.4 0.3 Istat=1mA 7.5 7.25 7 6.75 6.5 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 175 6.25 6 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (ºC) 11/20 VN770K ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) On State Resistance Vs Tcase Ron (mOhm) 400 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175 On State Resistance Vs VCC Ron (mOhm) 400 350 Iout=1A Vcc=8V; 13V & 36V Iout=1A 300 250 200 150 100 50 0 5 10 15 20 25 30 35 40 Tc=150ºC Tc=25ºC Tc= - 40ºC Tc (ºC) Vcc(V) Openload On State Detection Threshold Iol (mA) 60 55 50 45 40 35 30 25 20 15 10 -50 -25 0 25 50 75 100 125 150 175 Input High Level Vih (V) 3.5 3.375 Vcc=13V Vin=5V 3.25 3.125 3 2.875 2.75 2.625 2.5 2.375 2.25 2.125 2 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (ºC) Input Low Level Vil (V) 2.6 2.4 2.2 Input Hysteresis Voltage Vhyst (V) 1.5 1.4 1.3 1.2 2 1.8 1.6 1.4 1.1 1 0.9 0.8 0.7 1.2 1 -50 -25 0 25 50 75 100 125 150 175 0.6 0.5 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (°C) 12/20 VN770K ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) Overvoltage Shutdown Openload Off State Voltage Detection Threshold Vov (V) 50 47.5 45 3.5 42.5 40 37.5 35 1 32.5 30 -50 -25 0 25 50 75 100 125 150 175 0.5 0 -50 -25 0 25 50 75 100 125 150 175 3 2.5 2 1.5 Vol (V) 5 4.5 Vin=0V 4 Tc (ºC) Tc (ºC) Turn-on Voltage Slope dVout/dt(on) (V/ms) 1000 900 800 700 600 500 400 Turn-off Voltage Slope dVout/dt(off) (V/ms) 500 450 Vcc=13V Rl=13Ohm 400 350 300 250 200 Vcc=13V Rl=13Ohm 300 150 200 100 100 50 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) ILIM Vs Tcase Ilim (A) 20 18 Vcc=13V 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 13/20 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES Static Drain Source On Resistance Source-Drain Diode Forward Characteristics Vsd (mV) 1000 950 Rds(on) (mOhm) 500 Tj= - 40ºC 450 Vin=0V 900 850 800 750 700 650 600 550 500 0 2 4 6 8 10 12 14 400 350 300 250 200 150 100 50 0 0 0.25 0.5 Vin=2.5V Tj=25ºC Tj=150ºC 0.75 1 1.25 Id(A) Id(A) Derating Curve Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mOhm) 120 110 100 90 80 70 60 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 6 6.5 7 Tj= - 40ºC Tj=25ºC Id=3.5A Tj=150ºC Vin(V) Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mOhm) 140 Transconductance Gfs (S) 20 18 120 Tj=150ºC Vds=13V 16 14 Id=6A Id=1A Tj=-40ºC Tj=25ºC Tj=150ºC 100 80 12 10 60 Tj=25ºC 8 Tj=-40ºC Id=6A Id=1A Id=6A Id=1A 40 6 4 2 20 0 3 3.5 4 4.5 5 5.5 6 6.5 0 0 1 2 3 4 5 6 7 8 Vin(V) Id(A) 14/20 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Static Drain-Source On Resistance Vs. Id Transfer Characteristics Rds(on) (mOhm) 140 Idon(A) 10 9 Tj=25ºC Tj=-40ºC Tj=150ºC 120 Vin=3.5V Vds=13.5V 8 7 Vin=5V Tj=150ºC 100 80 6 5 60 Tj=25ºC Vin=3.5V Vin=5V Vin=3.5V Tj=-40ºC Vin=5V 4 3 2 1 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Id(A) Vin(V) Turn On Current Slope di/dt(A/us) 8 7 6 5 4 3 2 1 0 100 200 300 400 500 600 700 800 900 1000 1100 Turn On Current Slope di/dt(A/us) 2.25 2 Vin=5V Vdd=15V Id=3.5A 1.75 1.5 1.25 1 0.75 0.5 0.25 100 200 300 400 500 600 700 Vin=3.5V Vdd=15V Id=3.5A 800 900 1000 1100 Rg(ohm) Rg(ohm) Input Voltage Vs. Input Charge Vin(V) 8 7 6 5 Turn off drain source voltage slope dv/dt(V/us) 300 250 Vds=12V Id=3.5A 200 Vin=5V Vdd=15V Id=3.5A 150 4 3 2 1 0 0 0 5 10 15 20 25 100 200 300 400 500 600 700 800 900 1000 1100 100 50 Qg(nC) Rg(ohm) 15/20 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Turn Off Drain-Source Voltage Slope Capacitance Variations dv/dt(v/us) 300 C(pF) 600 250 500 200 Vin=3.5V Vdd=15V Id=3.5A f=1MHz Vin=0V 400 150 300 100 50 200 0 100 200 300 400 500 600 700 800 900 1000 1100 100 0 5 10 15 20 25 30 35 Rg(ohm) Vds(V) Switching Time Resistive Load t(us) 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 Switching Time Resistive Load t(ns) 1600 tr Vdd=15V Id=3.5A Vin=5V tr td(off) 1200 1400 tf 1000 800 600 Vdd=15V Id=3.5A Rg=150ohm td(off) 400 td(on) 200 tf td(on) 0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 Rg(ohm) Vin(V) Output Characteristics ID(A) 12 11 10 9 8 7 6 5 4 Vin=3V Vin=5V Vin=4.5V Vin=4V Normalized On Resistance Vs. Temperature Rds(on) 2.25 2 1.75 Vin=5V Id=3.5A 1.5 1.25 1 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Vin=2.5V 0.75 Vin=2V 0.5 -50 -25 0 25 50 75 100 125 150 175 VDS(V) T(ºC) 16/20 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Normalized Input Threshold Voltage Vs. Current Limit Vs. Junction Temperature Temperature Vin(th) 1.15 1.1 1.05 1 0.95 10 0.9 9 0.85 0.8 0.75 0.7 -50 -25 0 25 50 75 100 125 150 175 8 7 6 5 -50 -25 0 25 50 75 100 125 150 175 Ilim (A) 15 14 Vds=Vin Id=1mA 13 12 11 Vds=13V Vin=5V T(ºC) Tj (ºC) Step Response Current Limit Tdlim(us) 7 6.5 6 Vin=5V Rg=150ohm 5.5 5 4.5 4 3.5 5 10 15 20 25 30 35 Vdd(V) 17/20 VN770K SO-28 MECHANICAL DATA DIM. A a1 b b1 C c1 D E e e3 F L S 7.40 0.40 17.7 10.00 1.27 16.51 7.60 1.27 8 (max.) 0.291 0.016 18.1 10.65 0.10 0.35 0.23 0.50 45 (typ.) 0.697 0.393 0.050 0.650 0.299 0.050 0.713 0.419 mm. MIN. TYP MAX. 2.65 0.30 0.49 0.32 0.004 0.013 0.009 0.020 MIN. inch TYP. MAX. 0.104 0.012 0.019 0.012 18/20 VN770K SO-28 TUBE SHIPMENT (no suffix) Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) All dimensions are in mm. A C B 28 700 532 3.5 13.8 0.6 TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 16.4 60 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 16 4 12 1.5 1.5 7.5 6.5 2 End All dimensions are in mm. Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components 19/20 VN770K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. 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