XTHI12W850

Part Number: XTHI12W850 T-1 3/4 (5mm) Infrared Emitting Diode Features Package Schematics ● Radial / Through hole package ● Reliable & robust ● Low power consumption ● Available on tape and reel ● RoHS Compliant Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Specifications are subject to change without notice. Absolute Maximum Ratings (TA=25°C) THI/850 (GaAlAs) Unit Reverse Voltage VR 5 V Forward Current IF 50 mA Forward Current (Peak) 1/100 Duty Cycle 10us Pulse Width iFS Power Dissipation PD 95 Operating Temperature TA -40 ~ +85 1000 mA mW °C Storage Temperature Tstg -40 ~ +85 Lead Solder Temperature [2mm Below Package Base] 260°C For 3 Seconds Lead Solder Temperature [5mm Below Package Base] 260°C For 5 Seconds A Relative Humidity between 40% and 60% is recommended in ESD-protected work areas to reduce static build up during assembly process (Reference JEDEC/JESD625-A and JEDEC/J-STD-033) Part Number XTHI12W850 Emitting Material GaAlAs Lens-color Water Clear Operating Characteristics (TA=25°C) THI/850 (GaAlAs) Unit Forward Voltage (Typ.) (IF=20mA) VF 1.4 V Forward Voltage (Max.) (IF=20mA) VF 1.6 V Reverse Current (Max.) (VR=5V) IR 10 µA Wavelength of Peak Emission CIE127-2007* (Typ.) (IF=20mA) λP 850* nm Spectral Line Full Width At Half-Maximum (Typ.) (IF=20mA) △λ 50 nm C 30 pF Wavelength CIE127-2007* nm λP Viewing Angle 2θ 1/2 850* 20° Capacitance (Typ.) (VF=0V, f=1MHz) Radiant Intensity CIE127-2007* (Po=mW/sr) @20mA Radiant Intensity CIE127-2007* (Po=mW/sr) @50mA min. typ. min. typ. 12* 29* 40* 89* *Radiant intensity value and wavelength are in accordance with CIE127-2007 standards. Dec 07,2020 XDSA4506 V8-Z Layout: Maggie L. P. 1/3 Part Number: XTHI12W850 T-1 3/4 (5mm) Infrared Emitting Diode THI/850 Relative Radiant Intensity 100% Ta = 25 °C 15° Ta = 25 °C 80% 0° 1.0 30° 60% 45° 40% 60° 0.5 20% 75° 0% 750 800 850 900 Wavelength (nm) 950 1000 1050 90° 0° Relative Intensity Vs. CIE Wavelength 15° 30° 45° 60° 75° 0.0 90° Spatial Distribution Radiant intensity normalised at 20 mA Forward current (mA) Ta = 25 °C 40 30 20 10 1.0 1.2 1.4 1.6 Forward voltage (V) Forward Current vs. Forward Voltage 1.8 Ta = 25 °C 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 Forward current (mA) Radiant Intensity vs. Forward Current 50 2.5 60 Radiant intensity normalised at T a = 25 °C 2.5 50 0 0.8 Permissible forward current (mA)
THI/850 50 40 30 20 10 0 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 Ambient temperature (°C) Forward Current Derating Curve -40 -20 0 20 40 60 80 100 Ambient temperature (°C) Radiant Intensity vs. Ambient Temperature Remarks: If special sorting is required (e.g. binning based on forward voltage, luminous intensity / luminous flux), the typical accuracy of the sorting process is as follows: 1. Radiant Intensity / Luminous Flux: +/-15% 2. Forward Voltage: +/-0.1V Note: Accuracy may depend on the sorting parameters. Dec 07,2020 XDSA4506 V8-Z Layout: Maggie L. P. 2/3 Part Number: XTHI12W850 T-1 3/4 (5mm) Infrared Emitting Diode PACKING & LABEL SPECIFICATIONS TERMS OF USE 1. Data presented in this document reflect statistical figures and should be treated as technical reference only. 2. Contents within this document are subject to improvement and enhancement changes without notice. 3. The product(s) in this document are designed to be operated within the electrical and environmental specifications indicated on the datasheet. User accepts full risk and responsibility when operating the product(s) beyond their intended specifications. 4. The product(s) described in this document are intended for electronic applications in which a person’s life is not reliant upon the LED. Please consult with a SunLED representative for special applications where the LED may have a direct impact on a person’s life. 5. The contents within this document may not be altered without prior consent by SunLED. 6. Additional technical notes are available at https://www.SunLEDusa.com/TechnicalNotes.asp Dec 07,2020 XDSA4506 V8-Z Layout: Maggie L. P. 3/3