2N7002T

TAK CHEONG ® SEM I COND U CTO R Plastic Package N-Channel MOSFET Absolute Maximum Ratings Green Product 3 TA = 25°C unless otherwise noted Parameter Symbol 2N7002T 150mW SOT-523 SURFACE MOUNT Value Units 60 V ±20V V 2 VDS Drain-Source Voltage VGS Continuous Gate-Source Voltage ID Continuous Drain Current 115 mA PD Power Dissipation 150 mW RθJA Thermal Resistance from Junction to Ambient 833 °C /W TSTG Storage Temperature Range -55 to +150 °C +150 °C TJ Operating Junction Temperature 1. Gate 2. Source 3. Drain 1 SOT-523 These ratings are limiting values above which the serviceability of the device may be impaired. Specification Features: § Low On-resistance § Low Gate Threshold Voltage § Low Input capacitance § RoHS Compliant § Green EMC § Matte Tin(Sn) Lead Finish § Weight: approx. 0.002g Electrical Symbol: Device Marking Code: K72 DB Number: DB-246 July 2018, Revision B Page 1 TAK CHEONG ® SEM I COND U CTO R Electrical Characteristics (TA = 25°C unless otherwise noted) Off Characteristics Parameter Symbol BVDSS Test Condition Limits Min Typ Max 60 Unit Drain-Source Breakdown Voltage VGS=0V, ID=10uA Volts IGSS Gate-Body Leakage VDS=0V, VGS=±20V ±1 uA IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V 100 nA On Characteristics Parameter Symbol Test Condition Limits Min Typ Max Unit Vth(GS) Gate-Threshold Voltage VDS= VGS, ID=250uA ID(ON) On-state Drain Current VGS=10V, VDS=7V Drain-Source On-Resistance VGS=10V, ID=500mA 7.5 Ω VGS=5V, ID=50mA 7.5 Ω 500 ms RDS(on) gfs VDS(on) VSD 1 2.5 500 Volts mA Forward Trans Conductance VDS=10V, ID=200mA Drain-Source On-Voltage VGS=10V, ID=500mA 3.75 V VGS=5V, ID=50mA 0.375 V IS=250mA, VGS=0V 1 V Diode Forward Voltage 80 Dynamic Characteristics Symbol Ciss Parameter Test Condition Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Limits Unit Min Typ Max -- -- 50 pF -- -- 25 pF -- -- 5.0 pF Switching Characteristics Parameter Symbol tD(on) tD(off) Turn-on Time Test Condition VDD=10V, RL=20Ω, Limits Unit Min Typ Max -- 5.6 -- nS -- 25 -- nS ID=500mA, VGEN=10V, Turn-off Time RG = 10Ω DB Number: DB-246 July 2018, Revision B Page 2 TAK CHEONG ® SEM I COND U CTO R SOT-523 Package Outline MILLIMETERS INCHES DIM Typical Soldering Pattern: MIN MAX MIN MAX A 0.70 0.90 0.028 0.035 A1 0.00 0.10 0.000 0.004 A2 0.70 0.80 0.028 0.031 b1 0.15 0.25 0.006 0.010 b2 0.25 0.35 0.010 0.014 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 E 0.70 0.90 0.028 0.035 E1 1.45 1.75 0.057 0.069 e e1 0.50 TYP. 0.90 L L1 θ 0.020 TYP. 1.10 0.035 0.40 REF. 0.10 O 0 0.043 0.016 REF. 0.30 O 8 0.004 O 0 0.012 8O NOTES: 1. Above package outline conforms to JEITA EAIJ ED-7500A SC-75A. 2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions. DB Number: DB-246 July 2018, Revision B Page 3 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A