2N7002T

2N7002T Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR VGS VGSM Value 60 60 ±20 ±40 Unit Vdc Vdc Vdc Vpk 1 N–Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 150 1.8 833 –55 to +150 Unit mW mW/°C °C/W °C 2 3 1 2 2 RθJA TJ, Tstg SOT–523 MARKING DIAGRAM & PIN ASSIGNMENT Drain 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 3 72 2 Gate Source SOT-523 Dim A B C D G H J K L S V Min 1.500 0.750 72 = Device Code Max 1.700 0.850 0.900 0.300 1.100 0.100 0.200 0.300 0.600 1.750 0.350 D H K J C V 1 3 2 A L 0.600 0.150 0.900 0.000 0.100 0.100 0.400 1.450 0.250 BS G All Dimension in mm http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2N7002T Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –20 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60 – – – – – – – – – – 1.0 500 10 –10 Vdc µAdc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C Forward Transconductance (VDS = 10 V, ID = 200 mAdc) VGS(th) ID(on) 1.0 0.5 – 1 2.0 – Vdc A Ohms 13.5 7.5 – ms R DS(on) gFS – – 80 – – – DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss – – – – – – 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 30 Vdc, ID ^ 200 mAdc, 25 Vdc, 500 mAdc, RG = 25 Ω, RL = 150 Ω, Vgen = 10 V) td(on) td(off) – – – – 20 20 ns ns http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2N7002T Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 1 VGS = 5V 0.9 ID, DRAIN-SOURCE CURRENT (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VGS = 5, 6, 7, 10V VGS = 10,7,6V VGS = 4V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 3V 1.8 1.4 VGS = 4V VGS = 3V 1 0 0 1 2 3 4 5 0.6 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN-SOURCE CURRENT (A) Fig. 2 On-Resistance Variation with Gate Voltage and Drain-Source Current 1.2 VGS(th), NORMALIZED THRESHOLD VOLTAGE 2.2 RDS(ON), NORMALIZED ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 1.1 VGS = 10V ID = 500mA 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (° C) Fig. 3 Gate Threshold Variation with Temperature TJ, JUNCTION TEMPERATURE (° C) Fig. 4 On-Resistance Variation with Temperature 60 5.0 4.5 50 4.0 C, CAPACITANCE (pF) 40 3.5 3.0 30 2.5 2.0 ID = 50mA 20 Ciss 1.5 Coss 10 1.0 0.5 Crss 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 0.0 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 On-Resistance vs. Gate-Source Voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3