2SA1160

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) unless otherwise specified) Test conditions MIN -20 -10 -6 -0.1 -0.1 140 60 -0.2 140 50 -0.5 V MHz pF 600 TYP MAX UNIT V V V µA µA Ic= -1mA , IE=0 IC=-10mA , IB=0 IE= -1mA, IC=0 VCB= -20 V, IE=0 VEB= -6 V, IC=0 VCE=-1V, IC= -0.5A VCE=-1V, IC= -4A IC= -2A, IB=-50mA VCE=-1V, IC= -0.5A VCE=-10V, IE=0,f=1 MHz fT Cob CLASSIFICATION OF hFE Rank Range A 140-280 B 200-400 C 300-600