0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SB1260

2SB1260

  • 厂商:

    TEL

  • 封装:

  • 描述:

    2SB1260 - Plastic-Encapsulated Transistors - TRANSYS Electronics Limited

  • 数据手册
  • 价格&库存
2SB1260 数据手册
Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SB1260 TRANSISTOR (PNP) SOT-89 1. BASE FEATURES Power dissipation 0.5 PCM: Collector current -1 ICM: Collector-base voltage -80 V(BR)CBO: W (Tamb=25℃) A V 2. COLLECTOR 3. EMITTER 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage unless otherwise specified) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions MIN -80 -80 -5 -1 -1 82 390 -0.4 V MAX UNIT V V V µA µA Ic=-50µA , IE=0 IC= -1mA , IB=0 IE=-50µA, IC=0 VCB=-60 V , IE=0 VEB=-4 V , IC=0 VCE=-3V, IC= -0.1A IC=-500 mA, IB= -50mA VCE= -5V, IC=- 50mA Transition frequency fT f = 30MHz 80 MHz CLASSIFICATION OF hFE Rank Range P 82-180 Q 120-270 R 180-390 Marking ZL
2SB1260 价格&库存

很抱歉,暂时无法提供与“2SB1260”相匹配的价格&库存,您可以联系我们找货

免费人工找货
2SB1260-ZL
  •  国内价格
  • 1+0.47545
  • 100+0.44375
  • 300+0.41205
  • 500+0.38036
  • 2000+0.36451
  • 5000+0.355

库存:0

2SB1260T100R
  •  国内价格
  • 1+0.77792
  • 10+0.74911
  • 100+0.67996
  • 500+0.64539

库存:100