UNISONIC TECHNOLOGIES CO., LTD
2SB1260
POWER TRANSISTOR
DESCRIPTION
The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.
PNP SILICON TRANSISTOR
FEATURES
* High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)
Lead-free: 2SB1260L Halogen-free: 2SB1260G
ORDERING INFORMATION
Normal 2SB1260-x-AB3-R 2SB1260-x-TN3-R Ordering Number Lead Free 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R Halogen Free 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel
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1 of 4 QW-R208-017,E
2SB1260
ABSOLUATE MAXIUM RATINGS (Ta = 25℃)
PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current Power Dissipation SOT-89 TO-252 SYMBOL VCBO VCEO VEBO ICM IC PD
PNP SILICON TRANSISTOR
RATINGS -80 -80 -5 -2 -1 0.5 1.9 +150 -40 ~ +150
UNIT V V V A A W W ℃ ℃
Junction Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW
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