MPS2222A

Transys Electronics LIMITED NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222 MPS2222A TO-92 Plastic Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL MPS2222 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg 30 60 5 600 625 5.0 1.5 12 -55 to +150 MPS2222A 40 75 6 UNITS V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 200 83.3 ºC/W ºC/W NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS2222 MPS2222A TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MPS2222 IC=10mA,IB=0 BVCEO >30 Collector Emitter Voltage BVCBO IC=10µA,IE=0 Collector Base Voltage >60 Emitter Base Voltage Collector Cut off Current Collector Cut off Current BVEBO ICEX ICBO ICBO ICBO ICBO ICBO Emitter Cut off Current Base Cut off Current DC Current Gain IEBO IBL hFE VCB=50V, IE = 0 VCB=60V, IE = 0 VCB=50V, IE = 0 Ta= 125ºC VCB=60V, IE = 0 Ta= 125ºC VBE=3V, IC = 0 VCE=60V,VBE=3.0V VCE=10V,IC=0.1mA VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V,IC=10mA TA = -55 ºC VCE=10V*,IC=150mA VCE=1V*,IC=150mA VCE=10V*,IC=500mA VBE(sat)* VBE(sat)* VCE(sat)* IC=150mA,IB=15mA IC=500mA,IB= 50mA IC=150mA,IB=15mA IC=500mA,IB=50mA >35 >50 >75 40 >75 >6 50 >30