U4090B

U4090B Monolithic Integrated Feature Phone Circuit Description The µc controlled telephone circuit U4090B is a linear integrated circuit for use in feature phones, answering machines and fax machines. It contains the speech circuit, tone ringer interface with dc/dc converter, sidetone equivalent and ear protection rectifiers. The circuit is line powered and contains all components necessary for amplification of signals and adaptation to the line. An integrated voice switch with loudspeaker amplifier allows loudhearing or handsfree operation. With an anti-feedback function, acoustical feedback during loudhearing can be reduced significantly. The generated supply voltage is suitable for a wide range of peripheral circuits. Features D D D D D D D D D D D D D D D DC characteristic adjustable Transmit and receive gain adjustable Symmetrical input of microphone amplifier Anti-clipping in transmit direction Automatic line loss compensation Symmetrical output of earpiece amplifier Built-in ear protection DTMF and MUTE input Adjustable sidetone suppression independent of sending and receiving amplification Speech circuit with two sidetone networks Built-in line detection circuit Integrated amplifier for loudhearing operation Anti-clipping for loudspeaker amplifier Improved acoustical feedback suppression Power down D Voice switch D Tone ringer interface with dc/dc converter D Zero crossing detection D Common speaker for loudhearing and tone ringer D Supply voltages for all functional blocks of a subscriber set D Integrated transistor for short circuiting the line voltage D Answering machine interface D Operation possible from 10 mA line currents Benefits D Savings of one piezo electric transducer D Complete system integration of analog signal processing on one chip D Very few external components Applications Feature phone, answering machine, fax machine, speaker phone Speech circuit Voice switch Audio amplifier Loudhearing and Tone ringing MC with EEPROM/ DTMF 94 8741 Tone ringer TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 1 (34) Preliminary Information U4090B Block Diagram 2 (34) GT MICO TXIN IMPSEL 21 31 7 1 3 600 44 33 STO VL 8 AGA IND SENSE V B 11 10 V MP 14 V MPS 13 94 8064 W 34 MIC1 TXA 900 5 MIC MIC2 Impedance control VL I L I Supply Line detect AGA control Q S TX ACL 4 W Power supply V M 9 GND 6 PD 32 I REF 20 17 LIDET V RING 16 DTMF DTMF 2 TTXA 42 Current supply INLDR 28 Figure 1. Transmit mute control INLDT 27 TLDR 30 TLDT 29 26 Acoustical feedback suppression control ATAFS Receive attenuation RA2 –1 Mute receive control RA1 – + ST BAL – + – + 25 MUTX MUTR 35 36 40 41 39 38 RECO2 RECO1 GR RAC 37 STIL STIS 43 RECIN VMP + – 19 15 12 C OSC SW OUT Preliminary Information SAO SA 22 SACL TSACL 24 RFDO 18 THA SAI SAI 23 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 GSA Tip hook switch C1 13 V R2 to STIN to m C 1 3 7 C8 VM 34 21 31 10 11 14 13 5 4 2 42 R6 28 27 16 15 Q1 C9 20 17 44 33 8 Ring R3 V M C2 C4 C5 C6 R4 C3 R1 C7 R28 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 9 6 32 R5 Micro– phone DTMF Generator R27 C22 C21 RECO C20 R20 MICO R19 U4090B C19 Loudspeaker 12 22 24 23 25 35 40 R11 R13 R12 V M Earpeace C12 V M R9 41 39 C13 R10 R8 C11 36 C18 30 C17 29 R31 26 L1 19 R7 18 38 37 43 C10 STIN 2 (Option) Figure 2. Application circuit for loudhearing C16 Preliminary Information V L STO V M C15 R17 C14 R16 R15 R14 Micro controller VMP U4090B 94 8849 3 (34) U4090B 4 (34) hook switch C2 R26 to STIN 1 3 33 8 34 VM 4 C21 42 R6 28 C18 30 C17 29 R18 12 22 C15 24 C14 R15 R14 R13 R12 R11 23 25 35 36 41 39 C13 R 10 STIN 2 (Option) Earpiece VM C12 VM R9 R8 C11 BC177 STN 40 38 37 43 C10 VB VL LOGTX R21 VMP 18 C16 26 19 R7 27 16 15 Q1 C9 20 17 2 9 6 32 21 31 7 10 44 11 14 13 5 to m C C8 Ring Micro– phone R1 13 V R4 VM C3 R2 Tip C7 R25 R3 DTMF R24 C25 C1 C4 C6 C5 C23 HF–Mic C24 R23 R22 R5 RECO C27 R30 R29 LOGTX U4090B C26 L1 Figure 3. Application for handsfree operation Preliminary Information Loud speaker VM R17 R16 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 94 8850 Micro– controller U4090B Typical value of external components C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 C18 C19 C20 C21 C22 C23 C24 C25 C26 C27 L1 R1 R2 100 nF 4.7 nF 10 mF 220 mF 47 mF 470 mF 820 nF 100 mF 100 nF 150 nF 68 nF 33 nF 10 mF 100 nF 1 mF 47 mF 10 mF 10 mF 68 nF 68 nF 1 mF 100 nF 6.8 nF 10 nF 100 nF 470 nF 33 nF 2.2 mH 27 kW 20 kW R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18 R19 R20 R21 R22 R23 R24 R25 R26 R27 R28 R29 R30 R31 > 68 kW 10 W 1.5 kW 62 kW 680 kW 22 kW 330 W 3 kW 62 kW 30 kW 62 kW 120 kW 47 kW 1 kW 1.2 W 30 kW 6.8 kW 6.8 kW 15 kW 330 kW 220 kW 68 kW 2 kW 3.3 kW 18 kW 2 kW 1 kW 12 kW 56 kW TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 5 (34) Preliminary Information U4090B GT DTMF MICO MIC2 MIC1 PD IND VL GND SENSE VB SAO Pin Description 1 2 3 4 5 6 7 8 9 10 11 44 43 42 41 40 39 38 37 36 35 34 TXIN RECIN TTXA 2 GR RECO1 RAC STIL STIS RECO2 MUTR VM STO IREF AGA TLDR TLDT INLDR INLDT ATAFS MUTX 15 SAI GSA 12 13 14 11 8 9 10 VL GND 7 IND 3 4 5 6 MICO MIC 2 MIC 1 PD DTMF Pin 1 Symbol Function A resistor from this pin to GND sets the GT amplification of microphone and DTMF signals, the input amplifier can be muted by applying VMP to GT. Input for DTMF signals, also used for the answering machine and handsfree input Output of microphone preamplifier Non-inverting input of microphone amplifier Inverting input of microphone amplifier Active high input for reducing the current consumption of the circuit, simultaneously VL is shorted by an internal switch The internal equivalent inductance of the circuit is proportional to the value of the capacitor at this pin, a resistor connected to ground may be used to reduce the dc line voltage U4090B 12 33 32 31 30 29 28 27 26 25 24 23 94 7905 e VMPS 13 VMP 14 SWOUT COSC VRING THA RFDO LIDET IMPSEL TSACL 15 16 17 18 19 20 21 22 16 Line voltage Reference point for dc- and ac-output signals SENSE A small resistor (fixed) connected from this pin to VL sets the slope of the dc characteristic and also effects the line length equalization characteristics and the line current at which the loudspeaker amplifier is switched on VB Unregulated supply voltage for peripheral circuits (voice switch), limited to typically 7 V SAO Output of loudspeaker amplifier VMPS Unregulated supply voltage for µP, limited to 6.3 V VMP Regulated supply voltage 3.3 V for peripheral circuits (especially microprocessors), minimum output current: 2 mA (ringing) 4 mA (speech mode) SWOUT Output for driving external switching transistor COSC 40 kHz oscillator for ringing power converter 6 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Pin 17 18 19 20 21 Symbol Function VRING Input for ringing signal protected by internal zener diode THA Threshold adjustment for ringing frequency detector RFDO Output of ringing frequency detector LIDET Line detect; output is low when the line current is more than 15 mA IMP- Control input for selection of line SEL impedance 1. 600 Ω 2. 900 Ω 3. Mute of second transmit stage (TXA); also used for indication of external supply (answering machine); last chosen impedance is stored TSACL Time constant of anti-clipping of speaker amplifier GSA Current input for setting the gain of the speaker amplifier, adjustment characteristic is logarithmical, or RGSA > 2 MΩ, the speaker amplifier is switched off SA I Speaker amplifier input (for loudspeaker, tone ringer and handsfree use) MUTX Three state input of transmit mute: 1) Speech condition; inputs MIC1 / MIC2 active 2) DTMF condition; input DTMF active a part of the input signal is passed to the receiving amplifier as a confidence signal during dialing 3) Input DTMF used for answering machine and handsfree use; receive branch not affected ATAFS Attenuation of acoustical feedback suppression, maximum attenuation of AFS circuit is set by a resistor at this pin, without the resistor, AFS is switched off INLDT Input of transmit level detector INLDR Input of receive level detector Pin 29 30 31 Symbol Function TLDT Time constant of transmit level detector TLDR Time constant of receive level detector AGA Automatic gain adjustment with line current a resistor connected from this pin to GND sets the starting point max. gain change: 6 dB. IREF STO Internal reference current generation; RREF = 62 kΩ; IREF = 20 µA Side tone reduction output output resistance is approx. 300 Ω, maximum load impedance: 10 kΩ. Reference node for microphoneearphone and loudspeaker amplifier, supply for electret microphone (IM ≤ 700 mA) Three state mute input 1. Normal operation 2. Mute of ear piece 3. Mute of RECIN signal Condition of earpiece mute is stored 32 33 34 VM 22 23 35 MUTR 24 36 37 38 39 40 41 25 RECO 2 Inverting output of receiving amplifier STI S Input for side tone network (short loop) or for answering machine STI L Input for side tone network (long loop) RAC Input of receiving amplifier for ac coupling in feedback path RECO 1 Output of receiving amplifier GR A resistor connected from this pin to GND sets the receiving amplification of the circuit; amplifier RA1 can be muted by applying VMP to GR Time constant of anticlipping in transmit path RECIN Input of receiving path; input impedance is typically 80 kW TXIN Input of intermediate transmit stage, input resistance is typically 20 kΩ TTXA 26 42 43 44 27 28 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 7 (34) Preliminary Information U4090B DC line interface and supply voltage generation The DC line interface consists of an electronic inductance and a dual port output stage, which charges the capacitors at VMPS and VB. The value of the equivalent inductance is given by L = RSENSE @ CIND @ (RDC @ R30) / (RDC + R30)In order to improve the supply during worst case operating conditions two PNP current sources - IBOPT and IMPSOPT - hand an extra amount of current to the supply voltages, when the NPNs in parallel are unable to conduct current. A flowchart for the control of the current sources (figure 5) shows, how a priority for supply VMPS is achieved. VL 10 W SENSE RSENSE CIND 10 m F IND RDC + – – + + – IBOPT < 5 mA IMPSOPT < 5 mA 6.3 V VMPS = 3.3 V VMP 3.3 V/ 2 mA VB 470 m F 30 kW R30 47 m F 220 m F = VOFFS 7.0 V 94 8047 Figure 4. DC line interface with electronic inductance and generation of a regulated and an unregulated supply Y VSENSE–VMPS>200 mV VMPS < 6.3 V N N Y VSENSE–VB>200 mV N IMPSOPT = 0 IBOPT = 0 Y N VB < 6.3 V Y Charge CMPS (IMPSOPT) 94 8058 Charge CB (IBOPT) Reduce IBOPT (IMPSOPT = 0) Figure 5. Supply capacitors CMPS and CB are charged with priority on CMPS 8 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B The U4090B contains two identical series regulators, which provide a supply voltage VMP of 3.3 V suitable for a microprocessor. In speech mode both regulators are active, because VMPS and VB are charged simultaneously by the DC-line interface. Output current is 4 mA. The capacitor at VMPS is used to provide the microcomputer with sufficient power during long line interruptions. Thus long flash pulses can be bridged or a LCD display can be turned on for more than 2 seconds after going on hook. When the system is in ringing mode, VB is charged by the on chip ringing power converter. In this mode only one regulator is used to supply VMP with max. 2 mA. Supply structure of the chip As a major benefit the chip uses a very flexible system structure, which allows simple realization of numerous applications such as: group listening phone handsfree phone ringing with the built in speaker amplifier answering machine with external supply The special supply topology for the various functional blocks is illustrated in figure 6. V RING RPC Voltage regulator V B 7V VMP V MPS Voltage regulator VL Power supply 6.3 V QS PD ES IMPED CONTR IMPSEL LIDET LIDET VLon MIC, DTMF AGA, RA1, RA2 TX MUTE MUT REC, STBAL RECATT RFDO RFD TXA TXACL OFFSA COMP SAI,SA SACL AFS 94 8046 Figure 6. Supply of functional blocks is controlled by input voltages VL, VB, Vring and by logic inputs PD and IMPSEL There are four major supply states: 1. 2. 3. 4. Speech condition Power down (pulse dialing) Ringing External supply For line voltages below 1.9 V the switches remain in their quiescent state as shown the diagram. OFFSACOMP disables the group listening feature (SAI, SA, SACL, AFS) below line currents of approximately 10 mA. 2. When the chip is put into Power-down mode (PD = high), e.g. during pulse dialing, the internal switch QS shorts the line and all amplifiers are switched off. In this condition LIDET, voltage regulators and IMPED CONTR are the only active blocks. 1. In speech condition the system is supplied by the line current. If the LIDET-block detects a line voltage above the fixed threshold (1.9 V), the internal signal VLON is activated, thus switching off RFD and RPC and switching on all other blocks of the chip. TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 9 (34) Preliminary Information U4090B 3. During ringing the supply for the system is fed into VB via the ringing power converter (RPC). The only functional amplifiers are found in the speaker amplifier section (SAI, SA, SACL). 4. In an answering machine the chip is powered by an external supply via pin VB. This application demands a posibility to activate all amplifiers (except the transmit line interface TXA). Selecting IMPSEL = high impedance activates all switches at the ES line. Acoustic feedback suppression Acoustical feedback from the loudspeaker to the handset microphone may cause instability in the system. The U4090B offers a very efficient feedback suppression circuit, which uses a modified voice switch topology. figure 8 shows the basic system configuration. TX Att Handset microphone Log Hybrid Att contr Line Log Loudspeaker RX Att 94 8956 Figure 5. Basic voice switch system Two attenuators (TX ATT and RX ATT) reduce the critical loop gain by introducing an externally adjustable amount of loss either in the transmit or in the receive path.The sliding control in block ATT CONTR determines, wether the TX or the RX signal has to be attenuated. The overall loop gain remains constant under all operating conditions. Selection of the active channel is made by comparison of the logarithmically compressed TX- and RX- envelope curve. The system configuration for group listening, which is realized in the U 4090 B, is illustrated in figure 9. TXA and SAI represent the two attenuators, whereas the logarithmic envelope detectors are shown in a simplified way (operational amplifiers with two diodes). 10 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B VL GT MICO TIN INLDT TLDT STO VL ZL VBG – + TXA Zint SAO AFS control Max att. AGA GSA SAI SAI TLDR – VBG + INLDR RECO1 GR RECIN STIS STO STN 94 8059 Figure 6. Integration of acoustic feedback suppression circuit into the speech circuit environment A detailed diagram of the AFS (acountic feedback suppression) is given in figure 10. Receive and Transmit signals are first processed by logorithmic rectifiers in order to produce the envelopes of the speech at TLDT and RLDT. After amplification a decision is made by the differential pair, which direction should be transmitted. TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 11 (34) Preliminary Information U4090B TLDT TXA SAI TX RLDT INLDT AGA IAGAFS IAT IATAFS IATGSA 94 8060 AGA RX RLDR INLDR IGSA TLDR RATAFS ATAFS GSA Figure 7. Accoustic feedback suppression by alternative control of transmit- and speaker amplifier gain The attenuation of the controlled amplifiers TXA and SAI is determined by the emitter current IAT, which is comprised of three parts: IATAS IATGSA IAGAFS sets maximum attenuation decreases the attenuation, when speaker amplifier gain is reduced decreases the attenuation according to the loop gain reduction caused by the AGA– function IAT = IATAFS - IATGSA - IAGAFS DG = IAT * 0.67 dB/ mA Figure 11 illustrates the principal relationship between speaker amplifier gain (GSA) and attenuation of AFS (ATAFS). Both parameters can be adjusted independently, but the internal coupling between them has to be considered. Maximum usable value of GSA is 36 dB. The shape of the characteristic is moved in the x-direction by adjusting resistor RATAFS, thus changing ATAFSm. The actual value of attenuation (ATAFSa), however, can be determined by reading the value which belongs to the actual gain GSAa. If the speaker amplifier gain is reduced, the attenuation of AFS is automatically reduced by the same amount, in order to achieve a constant loop gain. Zero attenuation is set for speaker gains GSA GSA0 = 36 dB - ATAFSm. v 12 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B 94 8957 ATAFS (dB) ATAFSm RATAFS RATAFS ATAFSa not usable GSAo GSAa 36 dB GSA (dB) Figure 8. Reducing speaker amplifier gain results in an equal reduction of AFS attenuation 94 8958 When Power Down is activated (during pulse dialing), all of the line current flows through the short circuiting transistor QS (see figure 6). As long as IL is above typ. 1.6 mA, output LIDET is low. This comparator does not use hysteresis. IL LIDET 94 8959 PD Figure 9. Line detection with two comparators for speech mode and pulse dialling LIDET Line detection (LIDET) The line current supervision is active under all operating conditions of the U4090B. In speech mode (PD = inactive) the line current comparator uses the same thresholds as the comparator for switching off the entire speaker amplifier. The basic behaviour is illustrated in figure 13. Actual values of ILON/ILOFF vary slightly with the adjustment of the DC-characteristics and the selection of the internal line impedance. ILOFF ILON IL Figure 10. Line detection in speech mode with hysteresis TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 13 (34) Preliminary Information U4090B Ringing power converter (RPC) RPC transforms the input power at VRING (high voltage/ low current) into an equivalent output power at VB (low voltage/ high current), which is capable of driving the low ohmic loudspeaker. Input impedance at VRING is fixed at 5 kW and the efficiency of the step down converter is approx. 65%. 7 RDC=∞ 6 VL ( V ) RDC=130kW 5 RDC=68kW Ringing frequency detector (RFD) The U4090B offers an output signal for the microcontroller, which is a digital representation of the double ringing frequency. It is generated by a current comparator with hysteresis. Input voltage VRING is transformed into a current via RTHA. Thresholds are 8 mA and 24 mA. RFDO and VRING are in phase. A second comparator with hysteresis is used to enable the output RFDO, as long as the supply voltage for the microprocessor VMP is above 2.0 V. 4 3 10 94 9131 12 14 16 18 20 IL ( mA ) = ILON at line impedance = 600 W = ILOFF = ILON at line impedance = 900 W = ILOFF Figure 11. Comparator thresholds depend on dc mask and line impedance Absolute Maximum Ratings Parameters Line current DC line voltage Maximum input current Junction temperature Ambient temperature Storage temperature Total power dissipation, Tamb = 60°C Symbol IL VL IRING Tj Tamb Tstg Ptot Value 140 12 15 125 – 25 to + 75 – 55 to + 150 0.9 Unit mA V mA °C °C °C W Pin 17 14 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Thermal Resistance Junction ambient Parameters SSO44 Symbol RthJA Value 70 Unit K/W Electrical Characteristics f = 1 kHz, 0 dBm = 775 mVrms, IM = 0.3 mA, IMP = 2 mA, RDC = 130 kW, Tamb = 25°C, RGSA = 560 kW, Zear = 68 nF + 100 W, ZM = 68 nF, Pin 31 open, VIMPSEL = GND, VMUTX = GND, VMUTR = GND, unless otherwise specified. Parameters DC characteristics Test Conditions / Pin Symbol Min Typ 2.4 5.0 7.5 9.4 Max Unit Figure IL = 2 mA I = 14 mA DC voltage drop over circuit IL = 60 mA L IL = 100 mA VL 4.6 8.8 5.4 V 10.0 26 Transmission amplifier, IL = 14 mA, VMIC = 2 mV, RGT = 27 kW, unless otherwise specified Adjustment range of transGT 40 45 50 dB mit gain RGT = 12 kW 47 49 Transmitting amplification 48 dB RGT = 27 kW 39.8 41.8 GT IL 14 mA, Frequency response DGT 0.5 dB f = 300 to 3400 Hz Pin 31 open Gain change with current DGT 0.5 dB IL = 14 to 100 mA Tamb = – 10 to + 60 Gain deviation DGT 0.5 dB °C CMRR of microphone CMRR 60 80 dB amplifier Input resistance of MIC RGT = 12 kW 50 Ri kW amplifier RGT = 27 kW 75 45 110 IL > 14 mA Distortion at line dt 2 % VL = 700 mVrms IL > 19 mA d < 5% VLmax 1.8 3 4.2 dBm Vmic = 25 mV Maximum output voltage CTXA = 1 mF 28 28 28 28 28 28 28 28 w " " " 28 Noise at line psophometrically weighted Anti-clipping attack time release time Gain at low operating current IMPSEL = open RGT = 12 kW IL > 14 mA GT = 48 dB CTXA = 1 mF each 3 dB overdrive IL = 10 mA IMP = 1 mA RDC = 68 kW Vmic = 1 mV IM = 300 mA VMICOmax no –5.2 – 80 0.5 9 –72 dBm dBmp ms 28 28 GT 40 42.5 dB 28 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 15 (34) Preliminary Information U4090B Parameters Distortion at low operating current Test Conditions / Pin IL = 10 mA IM = 300 mA IMP = 1 mA RDC = 68 kW Vmic = 10 mV IL = 100 mA, RAGA = 20 kW Symbol Min Typ Max Unit Figure dt 5 % 28 Line loss compensation D GTI – 6.4 – 5.8 – 5.2 dB dB dB 28 28 28 Mute suppression IL 14 mA GTM 60 80 a) MIC muted (microphone Mutx = open preamplifier b) TXA muted (second IMPSEL = open GTTX 60 stage) Receiving amplifier, IL = 14 mA, RGR = 62 k, unless otherwise specified, VGEN = 300 mV IL 14 mA, single ended Adjustment range of –8 +2 GR differential MUTR = receiving gain –2 +8 GND w w dB 27 Receiving amplification Amplification of DTMF signal from DTMF IN to RECO 1, 2 Frequency response Gain change with current Gain deviation Ear protection differential MUTE suppression a) RECATT b) RA2 c) DTMF operation RGR = 62 kW differential RGR = 22 kW differential IL 14 mA VMUTX = VMP IL > 14 mA, f = 300 to 3400 Hz IL = 14 to 100 mA Tamb = – 10 to + 60°C IL 14 mA VGEN = 11 Vrms IL 14 mA MUTR = open VMUTR = VMP VMUTX = VMP –1 GR – 1.75 7.5 GRM D – 0.25 dB 27 w 7 10 13 dB dB dB dB Vrms 27 27 27 27 27 GRF w w GR DGR D " 0.5 " 0.5 " 0.5 2.2 60 EP D GR dB 27 Output voltage d 2% differential Maximum output current d 2% Receiving noise psophometrically weigthed v IL = 14 mA Zear = 68 nF + 100 W Zear = 100 W Zear = 68 nF + 100 W IL 14 mA each output against GND RAGA = 20 kW, IL = 100 mA IL = 10 mA IMP = 1 mA IM = 300 mA VGEN = 560 mV RDC = 68 kW 0.775 4 ni Ro D v Vrms mA (peak) – 80 – 77 10 dBmp W 27 27 27 w Output resistance Line loss compensation GRI – 7.0 – 6.0 – 5.0 dB 27 Gain at low operating current 27 GR –2 –1 0 dB 16 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Parameters AC impedance Distortion at low operating current Speaker Amplifier Minimum line current for operation Input resistance Gain from SAI to SAO Test Conditions / Pin VIMPSEL = GND VIMPSEL = VMP IL = 10 mA IMP = 1 mA VGEN = 560 mV RDC = 68 kW No ac signal Pin 24 VSAI = 3 mV, IL = 15 mA, RGSA = 560 kW RGSA = 20 kW Load resistance RL = 50 W, d < 5% VSAI = 20 mV IL = 15 mA IL = 20 mA IL > 15 mA IL = 15 mA Tamb = – 10 to + 60°C IL = 15 mA, VL = 0 dBm, VSAI = 4 mV Pin 23 open IL = 15 to 100 mA IL = 15 to 100 mA IL = 15 mA f = 300 to 3400 Hz 20 dB over drive Symbol Zimp Zimp Min 570 840 Typ 600 900 Max 640 960 Unit W W Figure 27 dR 5 % 27 ILmin 14 GSA 35.5 15 22 mA kW 31 31 31 36.5 –3 37.5 dB Output power 31 PSA PSA nSA 3 7 20 200 mW Output noise (Input SAI open) psophometrically weighted Gain deviation mVpsoph dB 31 31 DGSA VSAO "1 – 60 Mute suppression Gain change with current Resistor for turning off speaker amplifier Gain change with frequency dBm dB MW dB ms ms 31 31 31 31 31 31 DGSA RGSA 0.8 1.3 "1 2 DGSA " 0.5 Attack time of anti-clipping tr 5 Release time of anti-cliptf 80 ping DTMF-Amplifier Test conditions: IMP = 2 mA, IM = 0.3 mA, VMUTX = VMP Adjustment range of DTMF IL = 15 mA GD 40 50 gain Mute active IL = 15 mA, VDTMF = 8 mV DTMF amplification GD 40.7 41.7 42.7 Mute active: MUTX = VMP Gain deviaton IL = 15 mA Tamb = – 10 to + 60 °C GD dB 29 dB 29 " 0.5 dB 29 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 17 (34) Preliminary Information U4090B Test Conditions / Pin RGT = 27 kW, Input resistance RGT = 15 kW I 15 mA Distortion of DTMF signal L VL = 0 dBm Gain deviation with current IL = 15 to 100 mA AFS Acousting feedback suppression Adjustment range of IL 15 mA attenuation IL 15 mA, IINLDT = 0 mA Attenuation of transmit RATAFS = 30 kW gain IINLDR = 10 mA Parameters Symbol Ri dD w w w w w Min 60 26 Typ 180 70 Max 300 130 Unit kW % dB Figure 29 29 29 DGD 0 " 0.5 50 2 dB 31 DGT DGSA 1.5 45 dB 31 Attenuation of speaker amplifier IL 15 mA IINLDP = 0 m RATAFS = 30 kW IINLDR = 10 m 50 dB V 31 31 AFS disable IL 15 mA VATAFS Supply voltages, Vmic = 25 mV, Tamb = – 10 to + 60°C IL = 14 mA, VMP VMP RDC = 68 kW IMP = 2 mA IL = 100 mA VMPS VMPS RDC = inf., IMP = 0 mA IL 14 mA, VM VM IM = 700 mA RDC = 130 kW IB = + 20 mA, VB VB IL = 0 mA Ringing power converter, IMP = 1 mA, IM = 0 Maximum output power VRING = 20.6 V PSA RFDO: low to high VRINGON Threshold of ring VHYST frequency detector = VRINGON - RINGOFF VHYST Input impedance VRING = 30 V RRING f = 300 Hz to 3400 Hz Input impedance in speech RRINGSP IL > 15 mA, mode 3.1 3.3 3.5 V 26 6.7 V 26 w 1.3 7 3.3 7.6 V V 26 26 20 17.5 11.0 5 mW V 6 kW kW 30 30 30 30 4 150 VRING = 20V + 1.5Vrms Logic-level of frequency detector Ring detector enable Zener diode voltage VRING = 0 V VB = 4 V VRING = 25 V VRING = 25 V, RFDO high IRING = 25 mA 0 VRFDO VMP VMPON VRINGmax V 1.8 30.8 2.0 2.2 33.3 V V 30 30 30 18 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B Parameters MUTR Input MUTR input current Test Conditions / Pin VMUTR = GND IL > 14 mA VMUTR = VMP Mute low; IL > 14 mA Mute high; IL > 14 mA PD active, IL > 14 mA VPD = VMP PD = active PD = inactive IL = 14 mA, PD = active IL = 100 mA, PD = active Symbol Min Typ – 20 IMUTE +10 VMUTE VMUTE VMP-0.3 V Max Unit Figure – 30 0.3 mA V V 32 32 32 MUTR input voltage input voltage PD Input PD input current Input voltage Ipd Vpd Vpd VL VL 2 9 0.3 1.5 1.9 uA V 32 32 Voltage drop at VL V 32 Input characteristics of IMPSEL IL 14 mA Input current VIMPSEL = VMP VIMPSEL = GND w IIMPSEL IIMPSEL VIMPSEL VIMPSEL IMUTX IMUTX VMUTX VMUTX ILON ILOFF ILONPD 0.8 VMP-0.3 V VMP-0.3 V 18 – 18 mA mA V 0.3 V 32 32 32 Input voltage Input voltage MUTX input Input current Input voltage Input voltage Line detection Line current for LIDET active Line current for LIDET inactive Current threshold during power down Input high Input low VMUTX = VMP VMUTX = GND Input high Input low 20 – 20 30 – 30 mA mA V V 32 32 32 0.3 PD = inactive PD = inactive VB = 5 V, PD = active 12.6 11.0 1.6 2.4 mA mA mA 26 26 26 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 19 (34) Preliminary Information U4090B U 4090 B - Control 0 IMPSEL Line-impedance = 600 W TXA = on ES = off Line-impedance = 600 W TXA = off ES = on Line-impedance = 900 W TXA = off ES = on Line-impedance = 900 W TXA = on ES = off MODE Speech 0 MUTX MIC 1/2 transmit enabled receive enable AFS = on AGA = on TXACL = on DTMF transmit enabled receive enable AFS = on AGA = on TXACL = on DTMF transmit enabled DTMF to receive enable AFS = off AGA = off TXACL = off MODE Speech 0 to Z Transmit-mute Z Transmit-mute 1 to Z For answering machine 1 Speech 1 DTMF dialling 0 0 to Z 1 to Z MUTR RA2 = on RECATT = on STIS + STIL = on RA2 = on RECATT = off STIS = on, STIL = off RA2 = off RECATT = off STIS = on, STIL = off AGA off for STIS RA2 = off RECATT = on STIS + STIL = on MODE Speech Logic-level 0 = < (0.3 V) Z = > (1 V) < (VMP – 1 V) or (open input) 1 = > (VMP – 0.3 V) RECATT = Receive attenuation STIS, STIL = Inputs of sidetone balancing amplifiers ES = External supply AFS = Acoustical feedback supression control AGA = Automatic gain adjustment RA2 = Inverting receive amplifier TXACL = Transmit anticlipping control For answering machine For answering machine 1 Speech + earpeace mute 20 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B 94 8856 Figure 12. Typical DC Characteristic GT (dB) RGT (kohm) 94 8860 Figure 13. Typical adjustment range of transmit gain TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 21 (34) Preliminary Information U4090B 94 8859 Figure 14. Typical adjustment range of receive gain (differential output) 948855 Figure 15. Typical AGA-Characteristic 22 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 U4090B 94 8858 Figure 16. Typical load characteristic of VB for a maximum (RDC = infinity) DC-characteristic and 3 mW loudspeaker output 94 8874 Figure 17. Typical load characteristic of VB for a medium DC-characteristic (RDC = 130 kW) and 3 mW loudspeaker output TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 23 (34) Preliminary Information U4090B 94 8861 Figure 18. Typical load characteristic of VB for a minimum DC-characteristic (RDC = 68 kW) and 3 mW loudspeaker output 24 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 Mico 3 kW 3 kW VMP open RGR 10 m F IM ZEAR 41 40 39 38 37 36 35 34 33 32 31 30 29 100m F 10 m F 10 m F 62 k W 3.3 nF 28 47 nF 36 kW VL VM VM VM 47 nF 36 kW Figure 19. Basic test circuit 1 10 W 600 W RDC S1 22 mF IL 4.7 nF 2 3 4 5 6 7 8 9 10 11 12 13 14 47 m F 15 16 17 68 nF 18 19 680 k W IMP 20 21 1 mF 22 Preliminary Information U4090B 68 nF 10 m F 47 m F 1000 m F 50 W BC556 IDC 220 mF 2.2 mH SD103A RGT 1 kW VM S2 open VRing DC VMP U4090B reference figure for not connected pins S1 = closed: speech mode S2 = closed: ringer mode 94 9132 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 VMP open 3.3 nF 27 26 2 MW RGSA 25 24 23 220 nF 150 nF 1m F 44 43 42 25 (34) U4090B 1 68 nF 10m F 4.7 nF b IB RDC V DC IL VL VMP S1 open a VB 10 W 220 m F 1000 m F 47 m F 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IMP 16 17 18 19 20 21 22 RGT Figure 20. DC characteristics, line detection Preliminary Information ZEAR IM 62 k W 32 31 30 29 28 27 40 39 38 37 36 35 34 33 VLIDET V 1m F VMIC TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 Line detection: S1a VB (external supply): S1b open pins should be connected as shown in figure 25 94 9133 26 (34) VM RGR RAGA 10m F 100m F 30 k W RGSA 26 25 24 23 Mico VL 220 nF 150 nF 1 m F 44 43 42 41 U4090B open VM VMP VMP 10 m F RGR ZEAR S3 30 29 28 27 26 25 24 23 100 m F IM 62 k W RAGA VZEAR, dr open Mico VL 220 nF 150 nF 1 m F 1 68 nF 10 m F VDTMF 4.7 nF 2 10 W IL V 22 m F S1 b VGEN AC a VLR 220 m F 1000 m F 47 m F 3 4 5 6 7 8 9 10 11 12 13 14 15 IMP 16 17 18 19 20 21 1mF 22 Figure 21. RGT 220 nF V 1 kW RDC 600 W V MP open S2 Preliminary Information U4090B Mute suppression: open pins should be connected as shown in figure 25 VM Line loss compensation: D GRI = GR (at IL = 100 mA) –GR (at IL = 14 mA), S3 = closed Receiving noise: S1a Receive amplification: GR = 20*log ( VZEAR/VLR) dB (S1 = b, S2 open) DTMF-control signal: GRM = 20*log (VZEAR/VDTMF) dB (S1 =a, S2 = closed) AC-impedance: (VLR/ (VGEN – VLR)) * ZL a) RECATT: D GR = 20*log (VLR/VZEAR) dB +GR, MUTR = open b) RA2: D GR = 20*log (VLR/VZEAR) dB + GR, MUTR = VMP c) DTMF operation: D GR = 20*log VLR/VZEAR) dB + GR, MUTX = VMP 94 9134 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 41 40 39 38 37 36 35 34 33 32 31 44 43 42 U4090B 27 (34) U4090B 1 68 nF S1 b S2 4.7 nF RDC IL Transmitting amplification GT = 20*log Vmic VCM 600 V a 22 mF Line loss compensation: 25 k a 10 mF 10 W 220 mF 1000 m F 47 2 3 4 5 6 7 8 9 10 11 12 13 14 15 I MP 16 17 18 19 20 21 1 mF V MP open 22 RGTVMICO max V mF 25 k Figure 22. Transmission amplifier W W VL Vmic Preliminary Information U4090B AC S1 W VL, dt, n o GTI D GT (at IL = 100 mA) –GT (at IL = 14 mA), S3 = closed = 50 k VL (S2 = closed) –1 VL (S2 = open) Gain change with current: GTI = GT (at IL = 100 mA) –GT (at IL = 14 mA) D Input resistance: Ri = b 1 mF Common mode rejection ratio: CMRR = 20*log VCM + GT with S1b, S2 = closed, VL VL (at MUTX = low) Mute suppression: GTM = 20*log VL (at MUTX = open) VL (at IMPSEL = low) GTTX = 20*log VL (at IMPSEL = open) open pins should be connected as shown in figure 25 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 S3 = open 94 9135 28 (34) open VM open V MP RGR RAGA IM S3 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 62 k ZEAR 100 m F 10 m F V MP Mico VL 220 nF 150 nF 1 mF W 44 43 42 Mico VMP 10 m F 100 mF ZEAR IM 62 k W VL VM open 1 220 mF 1000 mF 47 mF 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IMP 16 17 18 19 20 21 22 68 nF 10 mF VDTMF IL RDC 4.7 nF V VL: S3 = closed 10 W Figure 23. DTMF amplifier RGT 1 mF Preliminary Information 40 39 38 37 36 35 34 33 32 31 30 29 28 220 nF 1kW V VM S3 50 k W VL 50kW: S3 = open dD DTMF-amplifier: 20log (VL/VDTMF) dB W Input resistance: (VL50K / (VL – VL50k)) * 50k Open pins should be connected as shown in figure 25 VGEN3 U4090B AC 94 9136 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 27 26 25 24 23 220 nF 150 nF 1 m F RGR 44 43 42 41 U4090B 29 (34) U4090B 1 10 W VSAO RDC 4.7 nF 50 W IMP 47m F 1000 mF 2 3 4 5 6 7 8 9 10 11 12 13 14 47 m F 15 16 17 680 kW 68 nF S5 V BC556 ramp 18 19 V 20 VRFDO 21 22 1 mF Figure 24. Ringing power converter 68 nF 10 mF Preliminary Information 100 m F 40 39 38 37 36 35 34 33 32 31 30 29 28 27 VRING IRING VMP VRING 1.5 V 20 V S1 S2 S3 IRING ramp S4 IL TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 220 mF 2.2 mH SD103A 20.6 V DC DC DC 94 9138 30 (34) VSAI 1.8 Vpp 1 kHz 100 nF RGSA 26 25 24 23 62 k W 1) Max. output power: PSA = Vsao2 (S4 closed) RSAO 2) Threshold of ringing frequency detector: detecting VRFDO, when driving VRING from 2 V to 22 V (VRINGON) and back again (VRINGOFF) (S2 = closed) VRING 3) Input impedance: RRING = (S3 = closed) IRING 4) Input impedance in speech mode (IL > 15 mA): RRINGSP = Vring (S1 = closed) Iring 5) Ring detector enable: detecting VRFDO, when driving VMP from 0.7 V to 3.3 V (VMPON) and back again (VMPOFF) (S5, S3 = closed) Open pins should be connected as shown in figure 25 44 43 42 41 U4090B 30 k W VM IINLDR IINLDT VATAFS Mico 10 mF ZEAR 10 mF off S4 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 10 mF 62 kW 220 nF V VSAI 1 68 nF 220 m F 1000m F 2 10 mF 47 m F 3 4 5 6 7 8 9 10 11 12 13 14 15 IMP 16 17 18 19 VLIDET 20 21 22 RGT RDC 10 W 47 m F S1 V 1mF Figure 25. Speaker amplifier VMIC 4.7 nF 600 W 22 m F 50 W Preliminary Information U4090B VL V IL V VSAO, S4 = closed VZIN, S4 = open n SA 2 Input impedance: (VZIN/(VSAO – VZIN)) * RIN Gain from SAI to SAO: 20*log (VSAO / VSAI) dB U4090B Output power: PSA = VSAO RSAO Attenuation of transmit gain: S1 = closed Open pins should be connected as shown in figure 25 94 9137 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 RGR RGSA 20 kW 24 23 220 nF 150 nF 1m F 44 43 42 31 (34) U4090B 1 68 nF Ipd 10 220 F 1000 F 2 10m F 4.7 nF RDC 3 4 5 6 7 8 9 10 11 12 13 14 47 F 15 16 17 18 19 20 21 22 Figure 26. Input characteristics of io-ports Preliminary Information 10m F ZEAR IMUTR IM 35 34 33 32 31 30 29 28 36 41 40 39 38 37 62 kW 27 100 m F RGT W m m m IMP IIMPSEL 1F TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 open Vpd VMP V IL VL VMP Open pins should be connected as shown in figure 25 94 9139 32 (34) VMP VM RGSA IMUTX 26 25 24 23 VMP RGR 44 43 42 U4090B m U4090B Ordering Information Type U4090B-FN Package SSO44 Dimensions in mm Package: SSO44 94 8888 TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96 33 (34) Preliminary Information U4090B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 34 (34) Preliminary Information TELEFUNKEN Semiconductors Rev. C1, 28-Oct-96