1N5062GP-E3/73

Not for New Designs 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application ® structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 DO-15 (DO-204AC) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes application. IF(AV) 1.0 A VRRM 200 V, 400 V, 600 V, 800 V IFSM 50 A IR 5.0 μA VF 1.2 V MECHANICAL DATA Case: DO-15 (DO-204AC), molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade TJ max. 175 °C Package DO-15 (DO-204AC) Circuit configuration Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT VRRM (1) 200 400 600 800 V Maximum RMS voltage VRMS 140 280 420 560 V Maximum DC blocking voltage VDC (1) 200 400 600 800 V Maximum average forward rectified current 0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) (1) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM (1) 50 A Maximum repetitive peak reverse voltage Maximum full load reverse current, full cycle average 0.375" (9.5 mm) lead length at Operating junction and storage temperature range TA = 25 °C TA = 75 °C IR(AV) (1) TJ, TSTG 5.0 150 -65 to +175 μA °C Note (1) JEDEC® registered values Revision: 05-Oct-2021 Document Number: 88513 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Max. instantaneous forward voltage 1.0 A TA = 75 °C VF TA = 25 °C Maximum DC reverse current at rated DC blocking voltage SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP TA = 175 °C (1) UNIT 1.2 V 5.0 IR (1) μA 300 Typical reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 2.0 μs Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF Note (1) JEDEC registered values THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP Typical thermal resistance RθJA (1) 45 RθJL (1) 20 UNIT °C/W Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5061GP-E3/54 0.425 54 4000 13" diameter paper tape and reel 1N5061GP-E3/73 0.425 73 2000 Ammo pack packaging Revision: 05-Oct-2021 Document Number: 88513 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Instantaneous Reverse Leakage Current (μA) Average Forward Rectified Current (A) 1.0 0.8 0.6 0.4 60 Hz Resistive or Inductive Load 0.375" (9.5 mm) Lead Length 0.2 0 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 25 50 75 100 125 150 175 0 200 20 40 60 80 Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 50 TA = 100 °C 8.3 ms Single Half Sine-Wave (JEDEC Method) 40 30 20 10 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 1 10 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 100 100 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 125 °C 10 1 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 05-Oct-2021 Document Number: 88513 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not for New Designs 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-15 (DO-204AC) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 05-Oct-2021 Document Number: 88513 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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