BAS86-M-08

BAS86-M www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA Case: MiniMELF (SOD-80) Weight: approx. 31 mg Cathode band color: black Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/2.5K per 7" reel (8 mm tape), 12.5K/box APPLICATIONS • Applications where a very low forward voltage is required PARTS TABLE PART BAS86-M ORDERING CODE CIRCUIT CONFIGURATION REMARKS BAS85-M-18 or BAS86-M-08 Single Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Continuous reverse voltage TEST CONDITION VR 50 V Forward continuous current (1) IF 200 mA IFRM 500 mA Ptot 200 mW VALUE 300 125 -65 to +125 -65 to +150 UNIT K/W °C °C °C tp ≤ 1 s, δ ≤ 0.5 Repetitive peak forward current (1) Power dissipation (1) UNIT Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air (1) Junction temperature Ambient operating temperature range Storage temperature range TEST CONDITION SYMBOL RthJA Tj Tamb TS Note (1) Valid provided that electrodes are kept at ambient temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse breakdown voltage Leakage current Forward voltage Diode capacitance Reverse recovery time TEST CONDITION IR = 10 μA (pulsed) VR = 40 V Pulse test tp < 300 μs, IF = 0.1 mA, δ < 2 % Pulse test tp < 300 μs, IF = 1 mA, δ < 2 % Pulse test tp < 300 μs, IF = 10 mA, δ < 2 % Pulse test tp < 300 μs, IF = 30 mA, δ < 2 % Pulse test tp < 300 μs, IF = 100 mA, δ < 2 % VR = 1 V, f = 1 MHz IF = 10 mA, IR = 10 mA, iR = 1 mA SYMBOL V(BR) IR VF VF VF VF VF CD trr MIN. 50 TYP. 200 275 365 460 700 MAX. 5 300 380 450 600 900 8 5 UNIT V μA mV mV mV mV mV pF ns Rev. 1.3, 16-Nov-2021 Document Number: 83402 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86-M www.vishay.com Vishay Semiconductors 10 500 9 VR = 50 V 450 400 350 300 250 PR - Limit at 100 % VR 200 150 PR - Limit at 80 % VR R thJA = 540 K/W 100 50 0 25 75 100 125 150 15830 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature f = 1 MHz 8 7 6 5 4 3 2 1 0 50 Tj - Junction Temperature (°C) 15827 C D - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0.1 1 10 100 V R - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage 10000 I R - Reverse Current (µA) V R = V RRM 1000 100 10 1 25 50 75 100 125 150 Tj - Junction Temperature (°C) 15828 Fig. 2 - Reverse Current vs. Junction Temperature 1000 IF - Forward Current (A) Tj = 125 °C 100 Tj = 25 °C 10 1 0.1 0 15829 0.5 1.0 1.5 V F - Forward Voltage (V) Fig. 3 - Forward Current vs. Forward Voltage Rev. 1.3, 16-Nov-2021 Document Number: 83402 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS86-M www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80) 1.6 (0.063) 1.4 (0.055) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Rev. 1.3, 16-Nov-2021 Document Number: 83402 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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