EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Ultrafast reverse
frequency
recovery
time
for
high
• Applicable for automated insertion
~
• High surge current capability
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
~
TYPICAL APPLICATIONS
Case Style DFM
LINKS TO ADDITIONAL RESOURCES
3D 3D
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
3D Models
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
1A
VRRM
50 V, 100 V, 150 V, 200 V
IFSM
50 A
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IR
5 μA
Polarity: as marked on body
VF at IF = 1.0 A
1.05 V
trr
50 ns
TJ max.
150 °C
Package
DFM
Circuit configuration
Quad
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AM
EDF1BM
EDF1CM
EDF1DM
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
V
Maximum RMS voltage
VRMS
35
70
106
140
V
Maximum DC blocking voltage
VDC
50
100
150
200
V
Maximum average forward output rectified current at TA = 40 °C
IF(AV)
1.0
A
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
50
A
I2t
10
A2s
TJ, TSTG
-55 to +150
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
UNIT
Revision: 03-Sep-2020
Document Number: 88577
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage drop
per diode
1.0 A
SYMBOL
EDF1AM
EDF1BM EDF1CM EDF1DM
VF
Maximum reverse current at rated DC blocking
voltage per diode
TA = 25 °C
Maximum reverse recovery time
per diode
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
1.05
IR
TA = 125 °C
trr
UNIT
V
5.0
μA
1.0
mA
50
ns
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
(1)
EDF1AM
EDF1BM
EDF1CM
RJA
38
RJL
12
EDF1DM
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
EDF1DM-E3/45
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.418
45
50
Tube
Revision: 03-Sep-2020
Document Number: 88577
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1000
60 Hz Resistive
or Inductive Load
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
0.75
0.5
Capacitive
Loads
IPK /I AV = 5.0
IPK /I AV = 10
IPK /I AV = 20
0.25
Instantaneous Reverse Leakage
Current (µA)
Average Forward Output Current (A)
1.0
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0
20
40
60
100
80
120
140
0
160
20
40
80
60
100
Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Derating Curves Output Rectified Current
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
60
30
TJ = 150 °C
Single Sine-Wave
50
Junction Capacitance (pF)
Peak Forward Surge Current (A)
100
40
30
20
10
1.0 Cycle
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
25
20
15
10
5
0
1
10
100
0.1
1
10
100
1000
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Instantaneous Forward Current (A)
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
Revision: 03-Sep-2020
Document Number: 88577
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Revision: 03-Sep-2020
Document Number: 88577
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000