IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
D
D2PAK (TO-263)
I2PAK (TO-262)
G
G
D
S
• Low gate charge Qg results in cimple drive
requirement
Available
• Improved gate, avalanche, and dynamic dV/dt
ruggedness
Available
• Fully characterized capacitance and avalanche
voltage and current
• Effective Coss specified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
G
D
S
S
N-Channel MOSFET
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
400
VGS = 10 V
0.55
Qg (Max.) (nC)
36
APPLICATIONS
Qgs (nC)
9.9
Qgd (nC)
16
• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching
Configuration
Single
TYPICAL SMPS TOPOLOGIES
• Single transistor flyback Xfmr. reset
• Single transistor forward Xfmr. reset (both for US line
input only)
ORDERING INFORMATION
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF740AS-GE3
SiHF740ASTRL-GE3a
SiHF740ASTRR-GE3a
SiHF740AL-GE3
Lead (Pb)-free
IRF740ASPbF
IRF740ASTRLPbFa
IRF740ASTRRPbFa
IRF740ALPbF
Package
D2PAK (TO-263)
I2PAK (TO-262)
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
SYMBOL
LIMIT
VDS
VGS
400
± 30
10
6.3
40
1.0
630
10
12.5
3.1
125
5.9
- 55 to + 150
300d
ID
IDM
EAS
IAR
EAR
TA = 25 °C
TC = 25 °C
PD
dV/dt
TJ, Tstg
for 10 s
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)
c. ISD ≤ 10 A, dI/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. Uses IRF740A, SiHF740A data and test conditions
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91052
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient (PCB
Mounted, Steady-State)a
PARAMETER
RthJA
-
40
Maximum Junction-to-Case (Drain)
RthJC
-
1.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
VDS
VGS = 0, ID = 250 μA
MIN.
TYP.
MAX.
UNIT
400
-
-
V
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
ΔVDS/TJ
VGS(th)
Reference to 25 °C, ID = 1
-
0.48
-
V/°C
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
nA
IGSS
IDSS
RDS(on)
gfs
mAd
VGS = ± 30 V
-
-
± 100
VDS = 400 V, VGS = 0 V
-
-
25
VDS = 320 V, VGS = 0 V, TJ = 125 °C
-
-
250
μA
-
-
0.55
Ω
4.9
-
-
S
-
1030
-
-
170
-
-
7.7
-
VDS = 1.0 V, f = 1.0 MHz
-
1490
-
VDS = 320 V, f = 1.0 MHz
-
52
-
-
61
-
-
-
36
ID = 6.0 Ab
VGS = 10 V
VDS = 50 V, ID = 6.0 Ad
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Effective Output Capacitance
Coss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
VGS = 0 V
Coss eff.
VDS = 0 V to 320
Vc, d
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
9.9
Gate-Drain Charge
Qgd
-
-
16
Turn-On Delay Time
td(on)
-
10
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
ID = 10 A, VDS = 320 V,
see fig. 6 and 13b, d
VDD = 200 V, ID = 10 A,
Rg = 10 Ω, RD = 19.5 Ω, see fig. 10b, d
tf
pF
nC
-
35
-
-
24
-
-
22
-
-
-
10
-
-
40
-
-
2.0
-
240
360
ns
-
1.9
2.9
μC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb, d
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRF740A, SiHF740A data and test conditions.
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91052
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
102
VGS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10
1
4.5 V
0.1
20 µs Pulse Width
TJ = 25 °C
10-2
0.1
1
10
TJ = 150 °C
1
TJ = 25 °C
0.1
4.0
102
10
VDS, Drain-to-Source Voltage (V)
91052_01
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
102
4.5 V
20 µs Pulse Width
TJ = 150 °C
0.1
0.1
91052_02
1
10
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
S21-0901-Rev. D, 30-Aug-2021
102
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1
6.0
7.0
8.0
9.0
10.0
Fig. 2 - Typical Transfer Characteristics
Top
10
5.0
VGS, Gate-to-Source Voltage (V)
91052_03
Fig. 1 - Typical Output Characteristics
102
20 µs Pulse Width
VDS = 50 V
91052_04
3.0
2.5
ID = 10 A
VGS = 10 V
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 3 - Normalized On-Resistance vs. Temperature
Document Number: 91052
3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
104
Ciss
103
Coss
102
Crss
10
102
ISD, Reverse Drain Current (A)
C, Capacitance (pF)
105
Vishay Siliconix
10
TJ = 150 °C
1
1
102
10
103
VDS, Drain-to-Source Voltage (V)
91052_05
0.2
VDS = 80 V
12
8
For test circuit
see figure 13
0
10
20
30
Fig. 5 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0901-Rev. D, 30-Aug-2021
1.2
1.4
100 µs
10
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
40
QG, Total Gate Charge (nC)
1.0
10 µs
4
0
0.8
Operation in this area limited
by RDS(on)
VDS = 320 V
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
102
VDS = 200 V
0.6
Fig. 6 - Typical Source-Drain Diode Forward Voltage
ID = 10 A
16
0.4
VSD, Source-to-Drain Voltage (V)
91052_07
Fig. 4 - Typical Capacitance vs. Drain-to-Source Voltage
91052_06
VGS = 0 V
0.1
1
20
TJ = 25 °C
91052_08
10 ms
102
103
VDS, Drain-to-Source Voltage (V)
Fig. 7 - Maximum Safe Operating Area
Document Number: 91052
4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
Vishay Siliconix
RD
VDS
VGS
8.0
ID, Drain Current (A)
D.U.T.
Rg
10.0
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
6.0
Fig. 10a - Switching Time Test Circuit
4.0
VDS
90 %
2.0
0.0
25
50
75
100
125
150
10 %
VGS
TC, Case Temperature (°C)
91052_09
td(on)
Fig. 8 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (ZthJC)
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
t1
Single Pulse
(Thermal Response)
10-2
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91052_11
Fig. 9 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
D.U.T
Rg
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
S21-0901-Rev. D, 30-Aug-2021
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91052
5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
1400
Vishay Siliconix
ID
4.5 A
6.3 A
Bottom 10 A
Top
1200
1000
800
600
400
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
91052_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
580
VDSav, Avalanche Voltage (V)
EAS, Single Pulse Avalanche Energy (mJ)
www.vishay.com
560
540
520
500
480
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
IAV, Avalanche Current (A)
91052_12d
Fig. 12d - Typlical Drain-to-Source Voltage
vs. Avalanche Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
S21-0901-Rev. D, 30-Aug-2021
Fig. 13b - Gate Charge Test Circuit
Document Number: 91052
6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740AS, SiHF740AS, IRF740AL, SiHF740AL
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
+
-
-
Rg
•
•
•
•
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 10 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91052.
S21-0901-Rev. D, 30-Aug-2021
Document Number: 91052
7
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A
(Datum A)
3
A
4
4
L1
B
A
E
c2
H
Gauge
plane
4
0° to 8°
5
D
B
Detail A
Seating plane
H
1
2
C
3
C
L
L3
L4
Detail “A”
Rotated 90° CW
scale 8:1
L2
B
A1
B
A
2 x b2
c
2xb
E
0.010 M A M B
± 0.004 M B
2xe
Plating
5
b1, b3
Base
metal
c1
(c)
D1
4
5
(b, b2)
Lead tip
MILLIMETERS
DIM.
MIN.
MAX.
View A - A
INCHES
MIN.
4
E1
Section B - B and C - C
Scale: none
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D1
6.86
-
0.270
-
A1
0.00
0.25
0.000
0.010
E
9.65
10.67
0.380
0.420
6.22
-
0.245
-
b
0.51
0.99
0.020
0.039
E1
b1
0.51
0.89
0.020
0.035
e
b2
1.14
1.78
0.045
0.070
H
14.61
15.88
0.575
0.625
b3
1.14
1.73
0.045
0.068
L
1.78
2.79
0.070
0.110
2.54 BSC
0.100 BSC
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.066
c1
0.38
0.58
0.015
0.023
L2
-
1.78
-
0.070
c2
1.14
1.65
0.045
0.065
L3
D
8.38
9.65
0.330
0.380
L4
0.25 BSC
4.78
5.28
0.010 BSC
0.188
0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.
Document Number: 91364
Revision: 15-Sep-08
www.vishay.com
1
Package Information
Vishay Siliconix
I2PAK (TO-262) (HIGH VOLTAGE)
A
(Datum A)
E
B
c2
A
E
A
L1
Seating
plane
D1
D
C
L2
C
B
B
L
A
c
3 x b2
E1
A1
3xb
Section A - A
Base
metal
2xe
b1, b3
Plating
0.010 M A M B
c1
c
(b, b2)
Lead tip
Section B - B and C - C
Scale: None
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.06
4.83
0.160
0.190
D
8.38
9.65
0.330
0.380
A1
2.03
3.02
0.080
0.119
D1
6.86
-
0.270
-
b
0.51
0.99
0.020
0.039
E
9.65
10.67
0.380
0.420
b1
0.51
0.89
0.020
0.035
E1
6.22
-
0.245
-
b2
1.14
1.78
0.045
0.070
e
b3
1.14
1.73
0.045
0.068
L
13.46
14.10
0.530
0.555
c
0.38
0.74
0.015
0.029
L1
-
1.65
-
0.065
c1
0.38
0.58
0.015
0.023
L2
3.56
3.71
0.140
0.146
c2
1.14
1.65
0.045
0.065
2.54 BSC
0.100 BSC
ECN: S-82442-Rev. A, 27-Oct-08
DWG: 5977
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost
extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.
Document Number: 91367
Revision: 27-Oct-08
www.vishay.com
1
AN826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
0.355
0.635
(16.129)
(9.017)
(10.668)
0.145
(3.683)
0.135
(3.429)
0.200
0.050
(5.080)
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 73397
11-Apr-05
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000
工商网监
湘ICP备2023018690号
