IRF820APBF

IRF820A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Low gate charge Qg results in simple drive requirement TO-220AB Available • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified G G D S S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω) VGS = 10 V 17 Qgs (nC) 4.3 Qgd (nC) APPLICATIONS 3.0 Qg (Max.) (nC) • Switch mode power supply (SMPS) • Uninterruptable power supply • High speed power switching 8.5 Configuration Single TYPICAL SMPS TOPOLOGIES • Two transistor forward • Half bridge • Full bridge ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRF820APbF Lead (Pb)-free and halogen-free IRF820APbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current VGS at 10 V TC = 25 °C TC = 100 °C current a Pulsed drain Linear derating factor Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c Operating junction and storage temperature range Soldering recommendations (peak temperature) d Mounting torque SYMBOL LIMIT VDS VGS 500 ± 30 2.5 1.6 10 0.40 140 2.5 5.0 50 3.4 -55 to +150 300d 10 1.1 ID IDM TC = 25 °C For 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 45 mH, Rg = 25 Ω, IAS = 2.5 A (see fig. 12) c. ISD ≤ 2.5 A, dI/dt ≤ 270 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0853-Rev. C, 16-Aug-2021 Document Number: 91057 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF820A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 2.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.60 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.5 V nA Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 - - 3.0 Ω 1.4 - - S - 340 - - 53 - - 2.7 - IGSS IDSS RDS(on) gfs ID = 1.5 Ab VGS = 10 V VDS = 50 V, ID = 1.5 Ab μA Dynamic Input capacitance Ciss Output capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss Output capacitance Coss VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz 490 Output capacitance Coss VGS = 0 V; VDS = 400 V, f = 1.0 MHz 15 Effective output capacitance Total gate charge Coss eff. VGS = 0 V; VDS = 0 V to 400 Vc 28 Qg ID = 2.5 A, VDS = 400 V, see fig. 6 and 13b - - 17 Gate-source charge Qgs - - 4.3 Gate-drain charge Qgd - - 8.5 Turn-on delay time td(on) - 8.1 - tr - 12 - - 16 - - 13 - - - 2.5 - - 10 Rise time Turn-Off delay time Fall time td(off) VGS = 10 V pF VDD = 250 V, ID = 2.5 A, Rg = 21 Ω, RD = 97 Ω, see fig. 10b tf nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current Pulsed diode forward current a Body diode voltage IS ISM VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 2.5 A, VGS = 0 S Vb TJ = 25 °C, IF = 2.5 A, dI/dt = 100 A/μsb - - 1.6 V - 330 500 ns - 760 1140 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0853-Rev. C, 16-Aug-2021 Document Number: 91057 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF820A www.vishay.com Vishay Siliconix 10 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 1 5.5 V 5.0 V Bottom 4.5 V ID, Drain-to-Source Current (A) Top 4.5 V 0.1 20 µs Pulse Width TJ = 25 °C 10-2 0.1 102 10 1 VDS, Drain-to-Source Voltage (V) 91057_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 ID = 2.5 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 91057_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 10 104 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1 C, Capacitance (pF) ID, Drain-to-Source Current (A) Top 4.5 V 103 Ciss 102 Coss 10 20 µs Pulse Width TJ = 150 °C 0.1 1 102 10 VDS, Drain-to-Source Voltage (V) 91057_02 Crss 1 1 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 1 TJ = 25 °C 0.1 20 µs Pulse Width VDS = 50 V 10-2 4.0 91057_03 5.0 6.0 7.0 8.0 Fig. 3 - Typical Transfer Characteristics ID = 2.5 A VDS = 400 V 15 VDS = 250 V VDS = 100 V 10 5 For test circuit see figure 13 0 9.0 VGS, Gate-to-Source Voltage (V) S21-0853-Rev. C, 16-Aug-2021 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 10 TJ = 150 °C 103 VDS, Drain-to-Source Voltage (V) 91057_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C 102 10 0 91057_06 4 8 12 16 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91057 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF820A www.vishay.com Vishay Siliconix RD ISD, Reverse Drain Current (A) 10 VDS VGS TJ = 150 °C D.U.T. RG + - VDD 10 V 1 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TJ = 25 °C Fig. 10 - Switching Time Test Circuit VGS = 0 V 0.1 0.4 0.6 0.8 1.0 1.2 VDS 90 % VSD, Source-to-Drain Voltage (V) 91057_07 Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 % VGS ID, Drain Current (A) 102 td(on) Operation in this area limited by RDS(on) 10 tr td(off) tf Fig. 11 - Switching Time Waveforms 10 µs 100 µs 1 1 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 102 10 103 104 VDS, Drain-to-Source Voltage (V) 91057_08 Fig. 8 - Maximum Safe Operating Area 3.0 ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 25 91054_09 50 75 100 125 150 TC, Case Temperature (°C) Fig. 9 - Maximum Drain Current vs. Case Temperature S21-0853-Rev. C, 16-Aug-2021 Document Number: 91057 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF820A www.vishay.com Vishay Siliconix Thermal Response (ZthJC) 10 1 D = 0.50 0.20 PDM 0.10 0.05 0.1 t1 0.02 0.01 t2 Single Pulse (Thermal Response) 10-2 10-5 10-4 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) 91057_11 L Vary tp to obtain required IAS VDS D.U.T RG + - IAS V DD 10 V 0.01 Ω tp Fig. 13 - Unclamped Inductive Test Circuit VDS A EAS, Single Pulse Avalanche Energy (mJ) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 300 250 200 150 100 50 0 25 91057_12c tp VDD ID 1.1 A 1.6 A Bottom 2.5 A Top 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 15 - Maximum Avalanche Energy vs. Drain Current VDS IAS QG 10 V Fig. 14 - Unclamped Inductive Waveforms QGS QGD VG Charge Fig. 16 - Basic Gate Charge Waveform S21-0853-Rev. C, 16-Aug-2021 Document Number: 91057 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF820A www.vishay.com Vishay Siliconix VDSav, Avalanche Voltage (V) 700 650 600 550 0.0 1.0 0.5 1.5 2.0 2.5 IAV, Avalanche Current (A) 91057_12d Fig. 17 - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T. 50 kΩ 12 V 0.2 µF 0.3 µF + D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S21-0853-Rev. C, 16-Aug-2021 Document Number: 91057 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF820A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • • • • dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91057. S21-0853-Rev. C, 16-Aug-2021 Document Number: 91057 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000