IRF9610

IRF9610 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S • Dynamic dV/dt rating TO-220AB Available • P-channel • Fast switching G Available • Ease of paralleling • Simple drive requirements G D S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) -200 VGS = -10 V 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration DESCRIPTION 3.0 Qg max. (nC) The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9610PbF Lead (Pb)-free and halogen-free IRF9610PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -200 Gate-source voltage VGS ± 20 VGS at 10 V Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current a ID IDM Linear derating factor Single pulse avalanche energy b UNIT V -1.8 -1.0 A -7.0 0.16 W/°C W PD 20 Repetitive avalanche current a ILM -7.0 A Repetitive avalanche energy a dV/dt -5.0 V/ns TJ, Tstg -55 to +150 Maximum power dissipation TC = 25 °C Peak diode recovery dV/dt c 300 Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) b. Not applicable c. ISD ≤ -1.8 A, dI/dt ≤ 70 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0867-Rev. C, 16-Aug-2021 Document Number: 91080 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9610 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 6.4 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage VDS VGS = 0 V, ID = -250 μA -200 - - V ΔVDS/TJ Reference to 25 °C, ID = -1 mA - -0.23 - V/°C VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = -200 V, VGS = 0 V - - -100 VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500 μA - - 3.0 Ω gfs VDS = -50 V, ID = -0.90 A b 0.90 - - S Input capacitance Ciss - 170 - Output capacitance Coss Reverse transfer capacitance Crss VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 10 Drain-source on-state resistance Forward transconductance RDS(on) ID = -0.90 A b VGS = -10 V Dynamic - 50 - - 15 - - - 11 - - 7.0 pF Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd - - 4.0 Turn-on delay time td(on) - 8.0 - tr VDD = -100 V, ID = -0.90 A, Rg = 50 Ω, RD = 110 Ω, see fig. 17 b - 15 - - 10 - - 8.0 - f = 1 MHz, open drain 2.5 - 14.3 - 4.5 - - 7.5 - - - -1.8 - - -7.0 - - -5.8 V - 240 360 ns - 1.7 2.6 μC Rise time Turn-off delay time td(off) Fall time tf Gate input resistance Rg Internal drain inductance LD Internal source inductance LS VGS = -10 V ID = -3.5 A, VDS = -160 V, see fig. 11 and 18 b Between lead, 6 mm (0.25") from package and center of die contact D nC ns Ω nH G S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current a ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Forward turn-on time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = -1.8 A, VGS = 0 V b TJ = 25 °C, IF = -1.8 A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0867-Rev. C, 16-Aug-2021 Document Number: 91080 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9610 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) - 2.40 - 2.40 -7V VGS = - 10, - 9, - 8 V VGS = - 10, - 9, - 8, - 7 V - 1.92 - 1.44 ID, Drain Current (A) ID, Drain Current (A) - 1.92 -6V - 0.96 -5V - 0.48 80 µs Pulse Test - 1.44 - 0.96 -5V - 0.48 80 µs Pulse Test -4V -4V 0.00 0.00 - 10 0 - 30 - 20 - 40 - 50 -2 0 VDS, Drain-to-Source Voltage (V) 91080_01 102 Negative ID, Drain Current (A) TJ = - 55 °C TJ = 25 °C TJ = 125 °C - 1.44 - 0.96 - 0.48 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 0.00 -2 0 -4 -6 -8 - 10 2 10 5 100 µs 2 1 ms 1 5 10 ms TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 2 1 5 10 2 5 102 2 5 103 Negative VDS, Drain-to-Source Voltage (V) 91080_04 Fig. 2 - Typical Transfer Characteristics ZthJC(t)/RthJC, Normalized Effective Transient Thermal Impedence (Per Unit) -8 Operation in this area limited by RDS(on) 5 - 10 VGS, Gate-to-Source Voltage (V) 91080_02 -6 Fig. 3 - Typical Saturation Characteristics - 2.40 - 1.92 -4 VDS, Drain-to-Source Voltage (V) 91080_03 Fig. 1 - Typical Output Characteristics ID, Drain Current (A) -6V Fig. 4 - Maximum Safe Operating Area 2.0 1.0 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 0.05 0.02 0.01 0.01 10-5 Notes: 1. Duty Factor, D = t1/t2 2. Per Unit Base = RthJC = 6.4 °C/W 3. TJM - TC = PDM ZthJC(t) Single Pulse (Transient Thermal Impedence) 2 5 10-4 2 5 10-3 2 5 10-2 2 5 0.1 2 5 1.0 2 5 10 t1, Square Wave Pulse Duration (s) 91080_05 Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration S21-0867-Rev. C, 16-Aug-2021 Document Number: 91080 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9610 www.vishay.com 2.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 1.6 TJ = - 55 °C 1.2 TJ = 25 °C TJ = 125 °C 0.8 0.4 0.0 0 - 0.48 - 0.96 - 1.44 - 1.92 - 2.40 ID, Drain Current (A) 91080_06 RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 2.5 ID = - 0.6 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 40 0 40 - 10.0 500 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd C ,C Coss = Cds + gs gd Cgs + Cgd - 5.0 C, Capacitance (pF) ID, Drain Current (A) 400 TJ = 150 °C TJ = 25 °C - 0.5 160 Fig. 9 - Normalized On-Resistance vs. Temperature Fig. 6 - Typical Transconductance vs. Drain Current - 1.0 120 TJ, Junction Temperature (°C) 91080_09 - 2.0 80 ≈ Cgs + Cgd 300 Ciss 200 Coss 100 - 0.2 Crss - 0.1 - 2.0 0 - 3.2 - 4.4 - 5.6 - 6.8 VSD, Source-to-Drain Voltage (V) 91080_07 1.15 1.05 0.95 0.85 91080_08 0 40 80 120 160 TJ, Junction Temperature (°C) Fig. 8 - Breakdown Voltage vs. Temperature S21-0867-Rev. C, 16-Aug-2021 - 30 - 40 - 50 Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage Negative VGS, Gate-to-Source Voltage (V) BVDSS, Drain-to-Source Breakdown Voltage (Normalized) 1.25 - 20 VDS, Drain-to-Source Voltage (V) 91080_10 Fig. 7 - Typical Source-Drain Diode Forward Voltage 0.75 - 40 - 10 0 - 8.0 20 ID = - 1.8 A VDS = - 100 V 16 VDS = - 60 V VDS = - 40 V 12 8 4 For test circuit see figure 18 0 0 91080_11 2 4 6 8 QG, Total Gate Charge (nC) Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91080 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9610 www.vishay.com 7 L RDS(on) measured with current pulse of 2.0 µs duration. Initial TJ = 25 °C. (Heating effect of 2.0 µs pulse is minimal.) 6 RDS(on), Drain-to-Source On Resistance (Ω) Vishay Siliconix 5 Vary tp to obtain required IL VGS = - 10 V VGS = - 10 V 4 VDS V DD D.U.T. tp + EC 0.05 Ω IL 3 VGS = - 20 V VDD = 0.5 VDS EC = 0.75 VDS 2 Fig. 15 - Clamped Inductive Test Circuit 1 0 0 -1 -2 -3 -5 -4 -6 -7 VDD ID, Drain Current (A) 91080_12 Fig. 12 - Typical On-Resistance vs. Drain Current IL 2.0 Negative ID, Drain Current (A) tp VDS EC 1.6 Fig. 16 - Clamped Inductive Waveforms 1.2 RD VDS 0.8 VGS 0.4 D.U.T. RG 0.0 25 50 75 100 125 - 10 V 150 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TC, Case Temperature (°C) 91080_13 +VDD Fig. 13 - Maximum Drain Current vs. Case Temperature Fig. 17a - Switching Time Test Circuit 20 td(on) tr td(off) tf PD, Power Dissipation (W) VGS 10 % 15 10 90 % VDS Fig. 17b - Switching Time Waveforms 5 0 0 91080_14 20 40 60 80 100 120 140 TC, Case Temperature (°C) Fig. 14 - Power vs. Temperature Derating Curve S21-0867-Rev. C, 16-Aug-2021 Document Number: 91080 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9610 www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. QG 15 V 50 kΩ 0.2 µF 12 V QGS QGD 0.3 µF - D.U.T. VG + VDS VGS Charge - 3 mA IG ID Current sampling resistors Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive Period P.W. D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 19 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91080. S21-0867-Rev. C, 16-Aug-2021 Document Number: 91080 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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