IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
600
RDS(on) (Max.) ()
VGS = 10 V
7.0
Qg (Max.) (nC)
14
Qgs (nC)
2.7
Qgd (nC)
8.1
Configuration
Single
D
APPLICATIONS
DPAK
(TO-252)
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• Power Factor Correction
IPAK
(TO-251)
D
D
G
TYPICAL SMPS TOPOLOGIES
G
S
G
• Low Power Single Transistor Flyback
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free and
Halogen-free
SiHFR1N60A-GE3
SiHFR1N60ATRL-GE3a
SiHFR1N60ATR-GE3a
SiHFR1N60ATRR-GE3a
SiHFU1N60A-GE3
IRFR1N60APbF
IRFR1N60ATRLPbFa
IRFR1N60ATRPbFa
IRFR1N60ATRRPbFa
IRFU1N60APbF
SiHFR1N60A-E3
SiHFR1N60ATL-E3a
SiHFR1N60AT-E3a
SiHFR1N60ATR-E3a
SiHFU1N60A-E3
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
Single Pulse Avalanche
Energyb
UNIT
V
1.4
0.89
A
5.6
0.28
W/°C
mJ
EAS
93
Repetitive Avalanche Currenta
IAR
1.4
A
Repetitive Avalanche Energya
EAR
3.6
mJ
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
PD
36
W
dV/dt
3.8
V/ns
TJ, Tstg
- 55 to + 150
300
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 95 mH, Rg = 25 , IAS = 1.4 A (see fig. 12).
c. ISD 1.4 A, dI/dt 180 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
S13-0171-Rev. D, 04-Feb-13
Document Number: 91267
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
50
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
600
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
Zero Gate Voltage Drain Current
IDSS
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
VDS = 600 V, VGS = 0 V
-
-
25
VDS = 480 V, VGS = 0 V, TJ = 150 °C
-
-
250
ID = 0.84 Ab
VGS = 10 V
VDS = 50 V, ID = 0.84 A
V
nA
μA
-
-
7.0
0.88
-
-
S
-
229
-
-
32.6
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Effective Output Capacitance
Coss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
Coss eff.
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
-
2.4
-
VDS = 1.0 V, f = 1.0 MHz
-
320
-
VDS = 480 V, f = 1.0 MHz
-
11.5
-
VDS = 0 V to 480 Vc
-
130
-
-
-
14
-
-
2.7
ID = 1.4 A, VDS = 400 V,
see fig. 6 and 13b
Gate-Drain Charge
Qgd
-
-
8.1
Turn-On Delay Time
td(on)
-
9.8
-
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDD = 250 V, ID = 1.4 A,
Rg = 2.15 , RD = 178 , see fig. 10b
tf
pF
nC
-
14
-
-
18
-
-
20
-
-
-
1.4
-
-
5.6
-
-
1.6
V
-
290
440
ns
-
510
760
μC
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 1.4 A, VGS = 0 Vb
TJ = 25 °C, IF = 1.4 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
S13-0171-Rev. D, 04-Feb-13
Document Number: 91267
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
1
0.1
4.5V
20μs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
100
TJ = 150 ° C
1
TJ = 25 ° C
0.1
4.0
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
1
4.5V
20μs PULSE WIDTH
TJ = 150 ° C
10
VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
S13-0171-Rev. D, 04-Feb-13
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
6.0
7.0
8.0
9.0
Fig. 3 - Typical Transfer Characteristics
TOP
0.1
5.0
VGS , Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
10
V DS = 100V
20μs PULSE WIDTH
ID = 1.4A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91267
3
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
10
V GS = 0V,
f = 1MHz
C iss = C gs + C gd, C dsSHORTED
C rss = C gd
C oss = C ds + C gd
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
10000
Vishay Siliconix
1000
C iss
100
C oss
10
TJ = 150 ° C
1
TJ = 25 ° C
Crss
1
0.1
0.4
A
1
10
100
1000
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
1.2
Fig. 7 - Typical Source-Drain Diode Forward Voltage
OPERATION IN THIS AREA LIMITED
BY RDS(on)
VDS = 480V
VDS = 300V
VDS = 120V
ID , Drain Current (A)
VGS , Gate-to-Source Voltage (V)
1.0
100
ID = 1.4A
16
0.8
VSD ,Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
20
V GS = 0 V
0.6
12
8
10
10us
100us
1
1ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8
10
12
14
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S13-0171-Rev. D, 04-Feb-13
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
10
10ms
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91267
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
1.6
RD
VDS
VGS
D.U.T.
ID , Drain Current (A)
Rg
+
- VDD
1.2
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
0.8
Fig. 10a - Switching Time Test Circuit
VDS
0.4
90 %
0.0
25
50
75
100
125
150
10 %
VGS
TC , Case Temperature ( ° C)
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
td(off) tf
tr
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
PDM
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
15 V
tp
L
VDS
Rg
D.U.T
IAS
20 V
tp
Driver
+
A
- VDD
IAS
0.01 Ω
Fig. 12a - Unclamped Inductive Test Circuit
S13-0171-Rev. D, 04-Feb-13
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91267
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
Vishay Siliconix
200
ID
TOP
0.65A
0.9A
BOTTOM 1.4A
160
120
80
40
0
25
50
75
100
125
150
770
V DSav , Avalanche Voltage (V)
EAS , Single Pulse Avalanche Energy (mJ)
www.vishay.com
750
730
710
690
670
0.0
A
0.4
1.2
1.6
I av , Avalanche Current (A)
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
0.8
Fig. 12d - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
VG
-
VDS
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Maximum Avalanche Energy vs. Drain Current
S13-0171-Rev. D, 04-Feb-13
Fig. 13b - Gate Charge Test Circuit
Document Number: 91267
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91267.
S13-0171-Rev. D, 04-Feb-13
Document Number: 91267
7
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E
A
C2
H
D
D1
L3
b3
e
b2
e1
L
gage plane height (0.5 mm)
L4
b
L5
E1
C
A1
MILLIMETERS
DIM.
MIN.
A
2.18
MAX.
2.38
A1
-
0.127
b
0.64
0.88
b2
0.76
1.14
b3
4.95
5.46
C
0.46
0.61
C2
0.46
0.89
D
5.97
6.22
D1
4.10
-
E
6.35
6.73
E1
4.32
-
H
9.40
10.41
e
2.28 BSC
e1
4.56 BSC
L
1.40
1.78
L3
0.89
1.27
L4
-
1.02
L5
1.01
1.52
Note
• Dimension L3 is for reference only
Revision: 16-Dec-2019
Document Number: 71197
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N
E
e
A
b3
E1
E1/2
c2
θ
e
L4
L5
L6
H
D
L3
D1
θ
0.25
(3°)
DETAIL "B"
C A B
(3°)
DETAIL "B"
A1
C
L
(L1)
b1
SEATING
C
PLANE
θ
L2
GAUGE
PLANE
H
C
(b)
c1
3x b
2x e
c
2x b2
MILLIMETERS
MILLIMETERS
DIM.
A
MIN.
2.18
MAX.
DIM.
MIN.
2.39
L
1.50
A1
-
0.13
L1
b
0.65
0.89
L2
MAX.
1.78
2.74 ref.
0.51 BSC
b1
0.64
0.79
L3
b2
0.76
1.13
L4
-
1.02
b3
4.95
5.46
L5
1.14
1.49
c
0.46
0.61
L6
0.65
0.85
c1
0.41
0.56
0°
10°
1
0°
15°
2
25°
35°
c2
0.46
0.60
D
5.97
6.22
D1
5.21
-
E
6.35
6.73
E1
4.32
e
H
2.29 BSC
9.94
0.89
1.27
Notes
• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional
10.34
ECN: E19-0649-Rev. Q, 16-Dec-2019
DWG: 5347
Revision: 16-Dec-2019
Document Number: 71197
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
4
3
E1
E
Thermal PAD
4
b4
θ2
4
A
0.010 0.25 M C A B
L2 4
c2
A
θ1
B
D
D1
A
C
3
Seating
plane
5
C
L1 L3
(Datum A)
C
L
B
B
A
A1
3 x b2
View A - A
2xe
c
3xb
0.010 0.25 M C A B
Plating
5
b1, b3
Base
metal
Lead tip
c1
(c)
5
(b, b2)
Section B - B and C - C
MILLIMETERS
DIM.
MIN.
MAX.
INCHES
MIN.
MILLIMETERS
MAX.
DIM.
MIN.
INCHES
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
D1
5.21
-
0.205
-
A1
0.89
1.14
0.035
0.045
E
6.35
6.73
0.250
0.265
4.32
-
0.170
-
b
0.64
0.89
0.025
0.035
E1
b1
0.65
0.79
0.026
0.031
e
b2
0.76
1.14
0.030
0.045
L
8.89
9.65
0.350
0.380
b3
0.76
1.04
0.030
0.041
L1
1.91
2.29
0.075
0.090
b4
4.95
5.46
0.195
0.215
L2
0.89
1.27
0.035
0.050
2.29 BSC
2.29 BSC
c
0.46
0.61
0.018
0.024
L3
1.14
1.52
0.045
0.060
c1
0.41
0.56
0.016
0.022
θ1
0'
15'
0'
15'
c2
0.46
0.86
0.018
0.034
θ2
25'
35'
25'
35'
D
5.97
6.22
0.235
0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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3
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2021
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Document Number: 91000
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