MBR10H45-E3/45

MBRB10H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • • • • • • • • 2 D PAK (TO-263AB) K 2 1 PIN 1 PIN 2 DESIGN SUPPORT TOOLS K HEATSINK click logo to get started Models Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Available For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 60 V MECHANICAL DATA IFSM 150 A Case: D2PAK (TO-263AB) VF 0.61 V IR 100 μA TJ max. Package 175 °C D2PAK Circuit configuration (TO-263AB) Single Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code, e.g. A, B, ...) Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test per Polarity: as marked MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRB10H60 Maximum repetitive peak reverse voltage VRRM 60 Working peak reverse voltage VRWM 60 Maximum DC blocking voltage VDC 60 Maximum average forward rectified current (fig. 1) IF(AV) 10 A Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 Peak repetitive reverse current at tp = 2.0 μs, 1 kHz IRRM 0.5 Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 10 mJ VC 25 kV dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C Electrostatic discharge capacitor voltage  Human body model: C = 100 pF, R = 1.5 k Voltage rate of change (rated VR) Operating junction and storage temperature range UNIT V A Revision: 19-Sep-2018 Document Number: 88780 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB10H60 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VF (1) Maximum instantaneous forward voltage IR (2) Maximum reverse current MBRB10H60 TEST CONDITIONS TYP. MAX. 0.71 UNIT IF = 10 A TJ = 25 °C - IF = 10 A TJ = 125 °C 0.57 0.61 IF = 20 A TJ = 25 °C - 0.85 IF = 20 A TJ = 125 °C 0.68 0.71 TJ = 25 °C - 100 μA TJ = 125 °C 2.0 12 mA Rated VR V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBRB10H60 UNIT RJC 2.0 °C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE 1.33 P 50/tube Tube 1.33 I 800/reel Tape and reel (1) TO-263AB MBRB10H60HE3_B/P TO-263AB MBRB10H60HE3_B/I (1) BASE QUANTITY DELIVERY MODE Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 175 Peak Forward Surge Current (A) Average Forward Current (A) 15 10 5 TJ = TJ max. 8.3 ms Single Half Sine-Wave 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 19-Sep-2018 Document Number: 88780 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBRB10H60 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 TJ = 125 °C 0.1 1000 100 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 10 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TJ = 150 °C 1 TJ = 125 °C 0.1 0.01 0.001 TJ = 25 °C 0.0001 0 20 40 60 80 1 0.1 0.01 100 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 19-Sep-2018 Document Number: 88780 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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