MBR10H90-E3/45

MBR10H100, MBRF10H100, MBRB10H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES ITO-220AC • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop 2 2 1 1 MBR10H100 MBRF10H100 PIN 1 PIN 2 PIN 1 CASE PIN 2 D2PAK (TO-263AB) K • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS MBRB10H100 PIN 1 PIN 2 DESIGN SUPPORT TOOLS K HEATSINK click logo to get started For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-220AC, ITO-220AC, D2PAK (TO-263AB) Models Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Available PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 100 V IFSM 250 A VF 0.64 V IR 4.5 μA TJ max. 175 °C Package TO-220AC, ITO-220AC, D2PAK (TO-263AB) Circuit configurations Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum        MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) SYMBOL MBR10H100 Maximum repetitive peak reverse voltage VRRM 100 Working peak reverse voltage VRWM 100 Maximum DC blocking voltage VDC 100 Maximum average forward rectified current IF(AV) 10 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 Peak repetitive reverse current at tp = 2.0 µs, 1 kHz IRRM 0.5 PARAMETER Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min UNIT V A dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C VAC 1500 V Revision: 08-Jun-2018 Document Number: 88667 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10H100, MBRF10H100, MBRB10H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage VF (1) IR (2) Maximum reverse current VALUE TEST CONDITIONS IF = 10 A TC = 25 °C 0.77 UNIT IF = 10 A TC = 125 °C 0.64 IF = 20 A TC = 25 °C 0.88 IF = 20 A TC = 125 °C 0.73 TJ = 25 °C 4.5 μA TJ = 125 °C 6.0 mA Rated VR V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL MBR MBRF MBRB UNIT RJC 2.7 5.8 2.7 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10H100-E3/45 PREFERRED P/N 1.80 45 50/tube Tube ITO-220AC MBRF10H100-E3/45 1.94 45 50/tube Tube TO-263AB MBRB10H100-E3/45 1.33 45 50/tube Tube TO-263AB MBRB10H100-E3/81 1.33 81 800/reel Tape and reel Revision: 08-Jun-2018 Document Number: 88667 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10H100, MBRF10H100, MBRB10H100 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) 20 Instantaneous Reverse Current (µA) 10 000 Average Forward Current (A) Resistive or Inductive Load 16 MBR, MBRB 12 8 4 MBRF TJ = 125 °C 1000 TJ = 100 °C 100 10 1 0.1 TJ = 25 °C 0.01 0 50 0 150 100 20 180 40 60 80 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 300 10 000 250 200 150 100 50 0 1000 100 10 1 100 10 0.1 1 10 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 TJ = 175 °C 10 TJ = 125 °C TJ = 150 °C TJ = 100 °C 1.0 TJ = 25 °C 0.1 0.01 0.1 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = TJ Max. 8.3 ms Single Half Sine-Wave Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 08-Jun-2018 Document Number: 88667 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10H100, MBRF10H100, MBRB10H100 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AC 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) DIA. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 1 PIN 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 2 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) PIN 1 CASE PIN 2 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) ITO-220AC 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.025 (0.64) 0.015 (0.38) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7° REF. 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 08-Jun-2018 Document Number: 88667 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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