SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
High Speed Optocoupler, 10 MBd
SOIC-8 Package
Features
• Choice of CMR performance of 10 kV/µs, 5 kV/µs,
and 100 V/µs
• High speed: 10 MBd typical
• + 5 V CMOS compatibility
• Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range
• Pure tin leads
• Meets IEC60068-2-42 (SO2) and
IEC60068-2-43 (H2S) requirements
• Low input current capability: 5 mA
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code Y
• CUL - File No. E52744, equivalent to CSA bulletin
5A
• DIN EN 60747-5-2 (VDE0884) (pending)
• Reinforced insulation rating
• VDE available with Option 1 per IEC60950
2.10.5.1 (pending)
Applications
Microprocessor System Interface
PLC, ATE input/output isolation
Computer peripheral interface
Digital Fieldbus Isolation: CC-Link, DeviceNet,
Profibus, SDS
High speed A/D and D/A conversion
AC Plasma Display Panel Level Shifting
Multiplexed Data Transmission
Digital control power supply
Ground loop elimination
Description
The SFH674xT and SFH675xT are single and dual
channel 10 MBd optocouplers utilizing a high efficient
input LED coupled with an integrated optical photo-
Document Number 84607
Rev. 1.3, 24-Nov-04
Dual channel
Single channel
NC
A
1
2
7
C
3
6
NC
4
5
8
VCC
VE
VO
GND
SFH6745T, SFH6746T, SFH6747T
A1
1
8
C1
2
7
C2
3
6
A2
4
5
VCC
VO1
VO2
GND
SFH6755T, SFH6756T, SFH6757T
18921-2
diode IC detector. The detector has an open drain
NMOS-transister output, providing less leakage compared to an open collector Schottky clamped transister output. For the single channel type, an enable
function on pin 7 allows the detector to be strobed.
The internal shield provides a guaranteed common
mode transient immunity of 5 kV/µs for the SFH6746T
and SFH6756T and 10 kV/µs for the SFH6747T and
SFH6757T. The use of a 0.1 µF bypass capacitor
connected between pin 5 and 8 is recommended.
Order Information
Part
Remarks
SFH6745T
100 V/µs, Single channel, SOIC-8
SFH6746T
5 kV/µs, Single channel, SOIC-8
SFH6747T
10 kV/µs, Single channel, SOIC-8
SFH6755T
100 V/µs, Dual channel, SOIC-8
SFH6756T
5 kV/µs, Dual channel, SOIC-8
SFH6757T
10 kV/µs, Dual channel, SOIC-8
Truth Table (Positive Logic)
LED
ON
OFF
ON
OFF
ON
OFF
ENABLE
H
H
L
L
NC
NC
OUTPUT
L
H
H
H
L
H
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1
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Average forward
Test condition
current1)
Symbol
IF
Value
20
Unit
mA
IF
15
mA
VR
5
V
Enable input
voltage1)
VE
VCC + 0.5 V
V
Enable input
current1)
IE
5
mA
IFSM
200
mA
Symbol
VCC
Value
7
Unit
V
Output current
IO
50
mA
Output voltage
VO
7
V
Pdiss
85
mW
Pdiss
60
mW
Symbol
Tstg
Value
- 55 to + 150
Unit
°C
Tamb
- 40 to + 100
°C
VISO
260
260
3000
°C
°C
VRMS
Average forward current2)
Reverse input voltage
t = 100 µs
Surge current
1)
Package: Single SOIC-8
2)
Package: Dual SOIC-8
Output
Parameter
Test condition
1 minute max.
Supply voltage
Output power dissipation1)
Output power dissipation per
1)
Package: Single SOIC-8
2)
Package: Dual SOIC-8
channel2)
Coupler
Parameter
Storage temperature
Test condition
Operating temperature
Lead solder temperature
Solder reflow temperature
Isolation test voltage
for 10 sec.
for 1 minute
t = 1.0 sec.
Recommended Operating Conditions
Parameter
Operating temperature
Test condition
Symbol
Tamb
Min
- 40
Typ.
Max
100
Unit
°C
Supply voltage
Vcc
4.5
5.5
V
Input current low level
IFL
0
250
µA
Input current high level
IFH
5
15
mA
Logic high enable voltage
VEH
2.0
VCC
V
Logic low enable voltage
VEL
0.0
0.8
V
RL
330
4K
Ω
5
-
Output pull up resistor
Fanout
www.vishay.com
2
RL = 1 kΩ
N
Document Number 84607
Rev. 1.3, 24-Nov-04
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C and Vcc = 5.5 V, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Input forward voltage
Test condition
IF = 10 mA
Reverse current
VR = 5.0 V
Input capacitance
f = 1 MHz, VF = 0 V
Symbol
VF
Min
1.1
Typ.
1.4
Max
1.7
Unit
V
IR
0.01
10
µA
CI
55
pF
Output
Parameter
High level supply
current (single
channel)
High level supply
current (dual
channel)
Low level supply
current (single
channel)
Test condition
VE = 0.5 V, IF = 0 mA
Symbol
ICCH
Min
Typ.
4.1
Max
7.0
Unit
mA
VE = VCC, IF = 0 mA
ICCH
3.3
6.0
mA
IF = 0 mA
ICCH
6.5
12.0
mA
VE = 0.5 V, IF = 10 mA
ICCL
4.0
7.0
mA
VE = VCC, IF = 10 mA
ICCL
3.3
6.0
mA
Low level supply
current (dual
channel)
High level output
current
IF = 10 mA
ICCL
6.5
12.0
mA
VE = 2.0 V, VO = 5.5 V, IF = 250 µA
IOH
0.002
1
µA
Low level output
voltage
VE = 2.0 V, IF = 5 mA,
IOL (sinking) = 13 mA
VOL
0.2
0.6
V
Input threshold
current
VE = 2.0 V, VO = 5.5 V,
IOL (sinking) = 13 mA
ITH
2.4
5.0
mA
High level enable
current
Low level enable
current
High level enable
voltage
Low level enable
voltage
VE = 2.0 V
IEH
- 0.6
- 1.6
mA
VE = 0.5 V
IEL
- 0.8
- 1.6
mA
VEH
2.0
V
VEL
0.8
V
Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified.
All Typicals at Ta = 25 °C, VCC = 5 V.
Parameter
Propagation delay time to high
output level
Propagation delay time to low
output level
Pulse width distortion
Test condition
RL = 350 Ω, CL = 15 pF
Symbol
tPLH
Min
20
Typ.
48
Max
100
Unit
ns
RL = 350 Ω, CL = 15 pF
tPHL
25
50
100
ns
RL = 350 Ω, CL = 15 pF
| tPHL - tPLH |
2.9
35
ns
Propagation delay skew
RL = 350 Ω, CL = 15 pF
tPSK
8
40
ns
Document Number 84607
Rev. 1.3, 24-Nov-04
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3
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Parameter
Output rise time (10 - 90 %)
Test condition
RL = 350 Ω, CL = 15 pF
Symbol
tr
Min
Typ.
23
Max
Unit
ns
Output fall time (90 - 10 %)
RL = 350 Ω, CL = 15 pF
tf
7
ns
Propagation delay time of
enable from VEH to VEL
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tELH
12
ns
Propagation delay time of
enable from VEL to VEH
RL = 350 Ω, CL = 15 pF,
VEL = 0 V, VEH = 3 V
tEHL
11
ns
VCC
Single Channel
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
1
VCC 8
IF
RL
VE
2
7
VOUT
Input IF
Monitoring
Node
RM
3
0.1 µF
Bypass
6
5
4
IF = 7.5 mA
IF = 3.75 mA
0 mA
Input IF
Output VO
Monitoring
Node
VOH
Output VO
1.5 V
VOL
C L = 15 pF
GND
tPHL
The Probe and Jig Capacitances are included in CL
tPL H
18964-2
Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
VCC
Dual Channel
IF
Input
Monitoring
Node
RM
1
VCC 8
2
7
3
6
4
5
RL
GND
0.1 µF
Bypass
Output VO
Monitoring
Node
CL= 15 pF
18963-2
Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
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4
Document Number 84607
Rev. 1.3, 24-Nov-04
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Input VE
Monitoring Node
Pulse Gen.
Zo = 50 Ω
t f = t r = 5 ns
VCC 8
VE
7
VOUT
6
1
7.5 mA
IF
VCC
Single Channel
2
3
RL
0.1 µF
Bypass
3V
Output VO
Monitoring
Node
tEHL
tELH
C L = 15 pF
4
1.5 V
Input VE
Output VO
1.5 V
5
GND
The Probe and Jig Capacitances are included in CL
18975-2
Figure 3. Single Channel Test Circuit for tEHL and tELH
Common Mode Transient Immunity
Parameter
Common mode
transient immunity
(high)
Test condition
|VCM| = 10 V, VCC = 5 V, IF = 0 mA,
Symbol
| CMH |
Min
100
Typ.
Max
Unit
V/µs
| CMH |
5000
10000
V/µs
| CMH |
10000
15000
V/µs
| CML |
100
| CML |
5000
10000
V/µs
| CML |
10000
15000
V/µs
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1)
|VCM| = 50 V, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2)
|VCM| = 1 kV, VCC = 5 V, IF = 0 mA,
VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C
3)
|VCM| = 10 V, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25
V/µs
°C 1)
|VCM| = 50 V, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 2)
|VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA,
VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 3)
1)
For SFH6745T and SFH6755T
2)
For SFH6746T and SFH6756T
3)
For SFH6747T and SFH6757T
Document Number 84607
Rev. 1.3, 24-Nov-04
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5
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
VCC
IF
Single Channel
1
B
A
VFF
2
VCC 8
VE
RL
7
0.1 µF
Bypass
VOUT
3
6
4
Output VO
Monitoring
Node
VCM
0V
VO 5 V
5
GND
VO 0.5 V
VCM (PEAK)
Switch AT A: IF = 0 mA
VO (min.)
Switch AT A: IF = 7.5 mA
VO (max.)
VCM
+
Pulse Generator
ZO = 50 Ω
CMH
CML
18976-2
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
IF
Dual Channel
B
VFF
+5V
VCC 8
1
A
2
7
3
6
4
RL
Output VO
Monitoring
Node
0.1 µF
Bypass
5
GND
VCM
+
Pulse Generator
ZO = 50 Ω
18977-1
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter
Climatic Classification (according to
IEC 68 part 1)
Comparative Tracking Index
VIOTM
Test condition
VIORM
Symbol
Min
CTI
175
5000
Typ.
55/110/21
Max
Unit
399
V
560
V
PSO
350
mW
ISI
150
mA
TSI
Creepage
Clearance
Insulation thickness, reinforced rated
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6
165
per IEC60950 2.10.5.1
4
4
0.2
°C
mm
mm
mm
Document Number 84607
Rev. 1.3, 24-Nov-04
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF = 50 mA
V F – Forward Voltage ( V )
1.6
IF = 20 mA
1.5
1.4
1.3
IF = 10 mA
1.2
IF = 1 mA
–20
0
20
40
60
80
Figure 6. Forward Voltage vs. Ambient Temperature
V F – Forward Voltage ( V )
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.15
1.0
0.5
0.0
–40
0
5
Figure 7. Forward Voltage vs. Forward Current
20
40
60
80
100
3.5
VCC = 7 V
IF = 0.25 mA
3.4
3.3
VCC = 5 V
IF = 0.25 mA
3.2
3.1
3.0
2.9
2.8
–40
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( C )
17615
Figure 10. High Level Supply Current vs. Ambient Temperature
2.8
– Input Threshold ON Current ( A )
7
6
5
4
3
2
–20
0
20
40
60
80 100
Tamb – Ambient Temperature ( C )
Figure 8. Reverse Current vs. Ambient Temperature
Document Number 84607
Rev. 1.3, 24-Nov-04
2.7
2.6
RL = 350
2.5
2.4
RL = 4 k
2.3
2.2
RL = 1 k
2.1
I
th
1
0
–40
0
Figure 9. Low Level Supply Current vs. Ambient Temperature
10 15 20 25 30 35 40 45 50
IF – Forward Current ( mA )
17611
–20
Tamb – Ambient Temperature ( C )
17614
I
1.10
I R – Reverse Current ( nA )
1.5
CCh–
1.20
VCC = 7 V
IF = 10 mA
VCC = 5 V
IF = 10 mA
2.0
High Level Supply Current ( mA )
1.60
17613-1
2.5
100
Tamb – Ambient Temperature ( °C )
17610
3.0
I
1.0
–40
3.5
CCl
1.1
4.0
– Low Level Supply Current ( mA )
1.7
–40
17616
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( C )
Figure 11. Input Threshold ON Current vs. Ambient Temperature
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SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
50
I oh – High Level Output Current ( nA )
– Input Threshold OFF Current ( A )
2.6
2.5
2.4
RL = 350
2.3
2.2
RL = 4 k
2.1
RL = 1 k
I
th
2.0
–40
–20
0
20
40
60
80
40
35
30
25
20
15
10
5
0
100
Tamb – Ambient Temperature ( C )
17617
45
–40
Figure 12. Input Threshold OFF Current vs. Ambient Temperature
IL = 10 mA
0.10
IL = 6 mA
0.05
60
80
100
4.5
4.0
3.5
3.0
2.5
2.0
RL = 350 Q
1.5
RL = 1 kQ
1.0
RL = 4 kQ
0.5
0.00
–40
0.0
–20
0
20
40
60
80
0
100
Tamb – Ambient Temperature ( C )
2
3
4
5
Figure 16. Output Voltage vs. Forward Input Current
60
t P – Propagation Delay time ( ns )
120
IF = 5 mA
IF = 10 mA
50
40
30
20
10
0
–40
1
IF – Forward Input Current ( mA )
17621
Figure 13. Low Level Output Voltage vs. Ambient Temperature
I ol – Low Level Output Current ( mA )
40
5.0
Vo – Output Voltage ( V )
Vol – Low Level Output Voltage ( V )
IL = 16 mA
IL = 13 mA
0.15
17618
tPLH, 4 kΩ
100
80
60
40
tPLH, 1 kΩ
tPLH, 350 Ω
tPHL, 350 Ω
20
tPHL, 1 kΩ
tPHL, 4 kΩ
0
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( ° C )
Figure 14. Low Level Output Current vs. Ambient Temperature
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8
20
5.5
VCC = 5.5 V
IF = 5 mA
0.20
17619
0
Figure 15. High Level Output Current vs. Ambient Temperature
0.30
0.25
–20
Tamb – Ambient Temperature ( C )
17620
–40
17622
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 17. Propagation Delay vs. Ambient Temperature
Document Number 84607
Rev. 1.3, 24-Nov-04
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
120
300
tr, RL = 4 kΩ
t r,f – Rise and Fall Time ( ns )
t P – Propagation Delay time ( ns )
tPLH, 4 kΩ
100
80
tPLH, 1 kΩ
tPLH, 350 Ω
60
40
tPHL, 350 Ω
tPHL, 1 kΩ
20
tPHL, 4 kΩ
250
200
150
tf , RL = 1 kΩ
tf , RL = 4 kΩ
100
tr, RL = 1 kΩ
50
0
tr, RL = 350 Ω
0
5
7
9
11
15
13
IF – Forward Current ( mA )
17623
–40
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
17626
Figure 18. Propagation Delay vs. Forward Current
Figure 21. Rise and Fall Time vs. Ambient Temperature
300
50
PWD – Pulse Width Distortion ( ns )
tf , RL = 350 Ω
t r,f – Rise and Fall Time ( ns )
tr, RL = 4 kΩ
RL = 4 kΩ
40
30
20
RL = 1 kΩ
10
RL = 350 Ω
0
–40
200
150
0
20
40
60
80
tr, RL = 1 kΩ
50
100
tr, RL = 350 Ω
5
7
9
11
13
15
IF – Forward Current ( mA )
17627
Figure 22. Rise and Fall Time vs. Forward Current
60
60
50
RL = 4 kΩ
40
30
RL = 1 kΩ
20
10
RL = 350 Ω
0
5
7
9
11
13
15
IF – Forward Current ( mA )
Figure 20. Pulse Width Distortion vs. Forward Current
Document Number 84607
Rev. 1.3, 24-Nov-04
t e – Enable Propagation Delay ( ns )
PWD – Pulse Width Distortion ( ns )
tf , RL = 1 kΩ
tf , RL = 4 kΩ
100
Figure 19. Pulse Width Distortion vs. Ambient Temperature
17625
tf , RL = 350 Ω
0
–20
Tamb – Ambient Temperature ( °C )
17624
250
17628
50
teLH = 4 kΩ
40
teLH = 350 Ω
teHL = 350 Ω
30
20
teLH = 1 kΩ
10
teHL = 1 kΩ
0
–40
–20
0
teHL = 4 kΩ
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 23. Enable Propagation Delay vs. Ambient Temperature
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9
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Package Dimensions in Inches (mm)
Single Channel SOIC-8
R .010 (.13)
.120± .005
(3.05± .13)
.240
(6.10)
.154± .005
CL
(3.91± .13)
.050 (1.27)
.014 (.36)
.036 (.91)
.170 (4.32)
.260 (6.6)
.016 (.41)
Pin One ID
.192± .005
.015± .002
(.38± .05)
(4.88± .13)
.004 (.10)
.008 (.20)
40°
.045 (1.14)
7°
.058± .005
(1.49± .13)
.125± .005
(3.18± .13)
.008 (.20)
5° max.
.050 (1.27)
typ.
.021 (.53)
ISO Method A
.020± .004
(.51± .10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04) max.
i178003
Dual Channel SOIC-8
.120±.002
(3.05±.05)
R .010 (.13)
CL .154±.002
(3.91±.05)
.240
(6.10)
.050 (1.27)
.014 (.36)
.036 (.91)
.170 (4.32)
.260 (6.6)
.016 (.41)
Pin One I.D.
.230±.002
(5.84±.05)
.045 (1.14)
7°
.015±.002
(.38±.05)
40°
.0585±.002
(1.49±.05)
ISO Method A
.004 (.10)
.008 (.20)
.008 (.20)
.050(1.27) Typ.
.040 (1.02)
i178020
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10
.020±.004
(.51±.10)
2 Plcs.
5° Max.
R.010
(.25) Max.
.125±.002
(3.18±.05)
Lead coplanarity
±.001 Max.
Document Number 84607
Rev. 1.3, 24-Nov-04
SFH6745T / 46T / 47T / 55T / 56T / 57T
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 84607
Rev. 1.3, 24-Nov-04
www.vishay.com
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