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SFH6747T

SFH6747T

  • 厂商:

    TFUNK(威世)

  • 封装:

    8-SOIC(0.154",3.90mm宽)

  • 描述:

    OPTOISO 3KV OPEN DRAIN 8SOIC

  • 数据手册
  • 价格&库存
SFH6747T 数据手册
SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors High Speed Optocoupler, 10 MBd SOIC-8 Package Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 MBd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range • Pure tin leads • Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements • Low input current capability: 5 mA • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code Y • CUL - File No. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2 (VDE0884) (pending) • Reinforced insulation rating • VDE available with Option 1 per IEC60950 2.10.5.1 (pending) Applications Microprocessor System Interface PLC, ATE input/output isolation Computer peripheral interface Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS High speed A/D and D/A conversion AC Plasma Display Panel Level Shifting Multiplexed Data Transmission Digital control power supply Ground loop elimination Description The SFH674xT and SFH675xT are single and dual channel 10 MBd optocouplers utilizing a high efficient input LED coupled with an integrated optical photo- Document Number 84607 Rev. 1.3, 24-Nov-04 Dual channel Single channel NC A 1 2 7 C 3 6 NC 4 5 8 VCC VE VO GND SFH6745T, SFH6746T, SFH6747T A1 1 8 C1 2 7 C2 3 6 A2 4 5 VCC VO1 VO2 GND SFH6755T, SFH6756T, SFH6757T 18921-2 diode IC detector. The detector has an open drain NMOS-transister output, providing less leakage compared to an open collector Schottky clamped transister output. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The internal shield provides a guaranteed common mode transient immunity of 5 kV/µs for the SFH6746T and SFH6756T and 10 kV/µs for the SFH6747T and SFH6757T. The use of a 0.1 µF bypass capacitor connected between pin 5 and 8 is recommended. Order Information Part Remarks SFH6745T 100 V/µs, Single channel, SOIC-8 SFH6746T 5 kV/µs, Single channel, SOIC-8 SFH6747T 10 kV/µs, Single channel, SOIC-8 SFH6755T 100 V/µs, Dual channel, SOIC-8 SFH6756T 5 kV/µs, Dual channel, SOIC-8 SFH6757T 10 kV/µs, Dual channel, SOIC-8 Truth Table (Positive Logic) LED ON OFF ON OFF ON OFF ENABLE H H L L NC NC OUTPUT L H H H L H www.vishay.com 1 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Average forward Test condition current1) Symbol IF Value 20 Unit mA IF 15 mA VR 5 V Enable input voltage1) VE VCC + 0.5 V V Enable input current1) IE 5 mA IFSM 200 mA Symbol VCC Value 7 Unit V Output current IO 50 mA Output voltage VO 7 V Pdiss 85 mW Pdiss 60 mW Symbol Tstg Value - 55 to + 150 Unit °C Tamb - 40 to + 100 °C VISO 260 260 3000 °C °C VRMS Average forward current2) Reverse input voltage t = 100 µs Surge current 1) Package: Single SOIC-8 2) Package: Dual SOIC-8 Output Parameter Test condition 1 minute max. Supply voltage Output power dissipation1) Output power dissipation per 1) Package: Single SOIC-8 2) Package: Dual SOIC-8 channel2) Coupler Parameter Storage temperature Test condition Operating temperature Lead solder temperature Solder reflow temperature Isolation test voltage for 10 sec. for 1 minute t = 1.0 sec. Recommended Operating Conditions Parameter Operating temperature Test condition Symbol Tamb Min - 40 Typ. Max 100 Unit °C Supply voltage Vcc 4.5 5.5 V Input current low level IFL 0 250 µA Input current high level IFH 5 15 mA Logic high enable voltage VEH 2.0 VCC V Logic low enable voltage VEL 0.0 0.8 V RL 330 4K Ω 5 - Output pull up resistor Fanout www.vishay.com 2 RL = 1 kΩ N Document Number 84607 Rev. 1.3, 24-Nov-04 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Electrical Characteristics Tamb = 25 °C and Vcc = 5.5 V, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Input forward voltage Test condition IF = 10 mA Reverse current VR = 5.0 V Input capacitance f = 1 MHz, VF = 0 V Symbol VF Min 1.1 Typ. 1.4 Max 1.7 Unit V IR 0.01 10 µA CI 55 pF Output Parameter High level supply current (single channel) High level supply current (dual channel) Low level supply current (single channel) Test condition VE = 0.5 V, IF = 0 mA Symbol ICCH Min Typ. 4.1 Max 7.0 Unit mA VE = VCC, IF = 0 mA ICCH 3.3 6.0 mA IF = 0 mA ICCH 6.5 12.0 mA VE = 0.5 V, IF = 10 mA ICCL 4.0 7.0 mA VE = VCC, IF = 10 mA ICCL 3.3 6.0 mA Low level supply current (dual channel) High level output current IF = 10 mA ICCL 6.5 12.0 mA VE = 2.0 V, VO = 5.5 V, IF = 250 µA IOH 0.002 1 µA Low level output voltage VE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mA VOL 0.2 0.6 V Input threshold current VE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mA ITH 2.4 5.0 mA High level enable current Low level enable current High level enable voltage Low level enable voltage VE = 2.0 V IEH - 0.6 - 1.6 mA VE = 0.5 V IEL - 0.8 - 1.6 mA VEH 2.0 V VEL 0.8 V Switching Characteristics Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All Typicals at Ta = 25 °C, VCC = 5 V. Parameter Propagation delay time to high output level Propagation delay time to low output level Pulse width distortion Test condition RL = 350 Ω, CL = 15 pF Symbol tPLH Min 20 Typ. 48 Max 100 Unit ns RL = 350 Ω, CL = 15 pF tPHL 25 50 100 ns RL = 350 Ω, CL = 15 pF | tPHL - tPLH | 2.9 35 ns Propagation delay skew RL = 350 Ω, CL = 15 pF tPSK 8 40 ns Document Number 84607 Rev. 1.3, 24-Nov-04 www.vishay.com 3 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Parameter Output rise time (10 - 90 %) Test condition RL = 350 Ω, CL = 15 pF Symbol tr Min Typ. 23 Max Unit ns Output fall time (90 - 10 %) RL = 350 Ω, CL = 15 pF tf 7 ns Propagation delay time of enable from VEH to VEL RL = 350 Ω, CL = 15 pF, VEL = 0 V, VEH = 3 V tELH 12 ns Propagation delay time of enable from VEL to VEH RL = 350 Ω, CL = 15 pF, VEL = 0 V, VEH = 3 V tEHL 11 ns VCC Single Channel Pulse Gen. Zo = 50 Ω t f = t r = 5 ns 1 VCC 8 IF RL VE 2 7 VOUT Input IF Monitoring Node RM 3 0.1 µF Bypass 6 5 4 IF = 7.5 mA IF = 3.75 mA 0 mA Input IF Output VO Monitoring Node VOH Output VO 1.5 V VOL C L = 15 pF GND tPHL The Probe and Jig Capacitances are included in CL tPL H 18964-2 Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf Pulse Gen. Zo = 50 Ω t f = t r = 5 ns VCC Dual Channel IF Input Monitoring Node RM 1 VCC 8 2 7 3 6 4 5 RL GND 0.1 µF Bypass Output VO Monitoring Node CL= 15 pF 18963-2 Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf www.vishay.com 4 Document Number 84607 Rev. 1.3, 24-Nov-04 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Input VE Monitoring Node Pulse Gen. Zo = 50 Ω t f = t r = 5 ns VCC 8 VE 7 VOUT 6 1 7.5 mA IF VCC Single Channel 2 3 RL 0.1 µF Bypass 3V Output VO Monitoring Node tEHL tELH C L = 15 pF 4 1.5 V Input VE Output VO 1.5 V 5 GND The Probe and Jig Capacitances are included in CL 18975-2 Figure 3. Single Channel Test Circuit for tEHL and tELH Common Mode Transient Immunity Parameter Common mode transient immunity (high) Test condition |VCM| = 10 V, VCC = 5 V, IF = 0 mA, Symbol | CMH | Min 100 Typ. Max Unit V/µs | CMH | 5000 10000 V/µs | CMH | 10000 15000 V/µs | CML | 100 | CML | 5000 10000 V/µs | CML | 10000 15000 V/µs VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1) |VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2) |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 3) |VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 V/µs °C 1) |VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 2) |VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 3) 1) For SFH6745T and SFH6755T 2) For SFH6746T and SFH6756T 3) For SFH6747T and SFH6757T Document Number 84607 Rev. 1.3, 24-Nov-04 www.vishay.com 5 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors VCC IF Single Channel 1 B A VFF 2 VCC 8 VE RL 7 0.1 µF Bypass VOUT 3 6 4 Output VO Monitoring Node VCM 0V VO 5 V 5 GND VO 0.5 V VCM (PEAK) Switch AT A: IF = 0 mA VO (min.) Switch AT A: IF = 7.5 mA VO (max.) VCM + Pulse Generator ZO = 50 Ω CMH CML 18976-2 Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity IF Dual Channel B VFF +5V VCC 8 1 A 2 7 3 6 4 RL Output VO Monitoring Node 0.1 µF Bypass 5 GND VCM + Pulse Generator ZO = 50 Ω 18977-1 Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity Safety and Insulation Ratings As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Comparative Tracking Index VIOTM Test condition VIORM Symbol Min CTI 175 5000 Typ. 55/110/21 Max Unit 399 V 560 V PSO 350 mW ISI 150 mA TSI Creepage Clearance Insulation thickness, reinforced rated www.vishay.com 6 165 per IEC60950 2.10.5.1 4 4 0.2 °C mm mm mm Document Number 84607 Rev. 1.3, 24-Nov-04 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) IF = 50 mA V F – Forward Voltage ( V ) 1.6 IF = 20 mA 1.5 1.4 1.3 IF = 10 mA 1.2 IF = 1 mA –20 0 20 40 60 80 Figure 6. Forward Voltage vs. Ambient Temperature V F – Forward Voltage ( V ) 1.55 1.50 1.45 1.40 1.35 1.30 1.25 1.15 1.0 0.5 0.0 –40 0 5 Figure 7. Forward Voltage vs. Forward Current 20 40 60 80 100 3.5 VCC = 7 V IF = 0.25 mA 3.4 3.3 VCC = 5 V IF = 0.25 mA 3.2 3.1 3.0 2.9 2.8 –40 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C ) 17615 Figure 10. High Level Supply Current vs. Ambient Temperature 2.8 – Input Threshold ON Current ( A ) 7 6 5 4 3 2 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C ) Figure 8. Reverse Current vs. Ambient Temperature Document Number 84607 Rev. 1.3, 24-Nov-04 2.7 2.6 RL = 350 2.5 2.4 RL = 4 k 2.3 2.2 RL = 1 k 2.1 I th 1 0 –40 0 Figure 9. Low Level Supply Current vs. Ambient Temperature 10 15 20 25 30 35 40 45 50 IF – Forward Current ( mA ) 17611 –20 Tamb – Ambient Temperature ( C ) 17614 I 1.10 I R – Reverse Current ( nA ) 1.5 CCh– 1.20 VCC = 7 V IF = 10 mA VCC = 5 V IF = 10 mA 2.0 High Level Supply Current ( mA ) 1.60 17613-1 2.5 100 Tamb – Ambient Temperature ( °C ) 17610 3.0 I 1.0 –40 3.5 CCl 1.1 4.0 – Low Level Supply Current ( mA ) 1.7 –40 17616 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( C ) Figure 11. Input Threshold ON Current vs. Ambient Temperature www.vishay.com 7 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors 50 I oh – High Level Output Current ( nA ) – Input Threshold OFF Current ( A ) 2.6 2.5 2.4 RL = 350 2.3 2.2 RL = 4 k 2.1 RL = 1 k I th 2.0 –40 –20 0 20 40 60 80 40 35 30 25 20 15 10 5 0 100 Tamb – Ambient Temperature ( C ) 17617 45 –40 Figure 12. Input Threshold OFF Current vs. Ambient Temperature IL = 10 mA 0.10 IL = 6 mA 0.05 60 80 100 4.5 4.0 3.5 3.0 2.5 2.0 RL = 350 Q 1.5 RL = 1 kQ 1.0 RL = 4 kQ 0.5 0.00 –40 0.0 –20 0 20 40 60 80 0 100 Tamb – Ambient Temperature ( C ) 2 3 4 5 Figure 16. Output Voltage vs. Forward Input Current 60 t P – Propagation Delay time ( ns ) 120 IF = 5 mA IF = 10 mA 50 40 30 20 10 0 –40 1 IF – Forward Input Current ( mA ) 17621 Figure 13. Low Level Output Voltage vs. Ambient Temperature I ol – Low Level Output Current ( mA ) 40 5.0 Vo – Output Voltage ( V ) Vol – Low Level Output Voltage ( V ) IL = 16 mA IL = 13 mA 0.15 17618 tPLH, 4 kΩ 100 80 60 40 tPLH, 1 kΩ tPLH, 350 Ω tPHL, 350 Ω 20 tPHL, 1 kΩ tPHL, 4 kΩ 0 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( ° C ) Figure 14. Low Level Output Current vs. Ambient Temperature www.vishay.com 8 20 5.5 VCC = 5.5 V IF = 5 mA 0.20 17619 0 Figure 15. High Level Output Current vs. Ambient Temperature 0.30 0.25 –20 Tamb – Ambient Temperature ( C ) 17620 –40 17622 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 17. Propagation Delay vs. Ambient Temperature Document Number 84607 Rev. 1.3, 24-Nov-04 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors 120 300 tr, RL = 4 kΩ t r,f – Rise and Fall Time ( ns ) t P – Propagation Delay time ( ns ) tPLH, 4 kΩ 100 80 tPLH, 1 kΩ tPLH, 350 Ω 60 40 tPHL, 350 Ω tPHL, 1 kΩ 20 tPHL, 4 kΩ 250 200 150 tf , RL = 1 kΩ tf , RL = 4 kΩ 100 tr, RL = 1 kΩ 50 0 tr, RL = 350 Ω 0 5 7 9 11 15 13 IF – Forward Current ( mA ) 17623 –40 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 17626 Figure 18. Propagation Delay vs. Forward Current Figure 21. Rise and Fall Time vs. Ambient Temperature 300 50 PWD – Pulse Width Distortion ( ns ) tf , RL = 350 Ω t r,f – Rise and Fall Time ( ns ) tr, RL = 4 kΩ RL = 4 kΩ 40 30 20 RL = 1 kΩ 10 RL = 350 Ω 0 –40 200 150 0 20 40 60 80 tr, RL = 1 kΩ 50 100 tr, RL = 350 Ω 5 7 9 11 13 15 IF – Forward Current ( mA ) 17627 Figure 22. Rise and Fall Time vs. Forward Current 60 60 50 RL = 4 kΩ 40 30 RL = 1 kΩ 20 10 RL = 350 Ω 0 5 7 9 11 13 15 IF – Forward Current ( mA ) Figure 20. Pulse Width Distortion vs. Forward Current Document Number 84607 Rev. 1.3, 24-Nov-04 t e – Enable Propagation Delay ( ns ) PWD – Pulse Width Distortion ( ns ) tf , RL = 1 kΩ tf , RL = 4 kΩ 100 Figure 19. Pulse Width Distortion vs. Ambient Temperature 17625 tf , RL = 350 Ω 0 –20 Tamb – Ambient Temperature ( °C ) 17624 250 17628 50 teLH = 4 kΩ 40 teLH = 350 Ω teHL = 350 Ω 30 20 teLH = 1 kΩ 10 teHL = 1 kΩ 0 –40 –20 0 teHL = 4 kΩ 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 23. Enable Propagation Delay vs. Ambient Temperature www.vishay.com 9 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Package Dimensions in Inches (mm) Single Channel SOIC-8 R .010 (.13) .120± .005 (3.05± .13) .240 (6.10) .154± .005 CL (3.91± .13) .050 (1.27) .014 (.36) .036 (.91) .170 (4.32) .260 (6.6) .016 (.41) Pin One ID .192± .005 .015± .002 (.38± .05) (4.88± .13) .004 (.10) .008 (.20) 40° .045 (1.14) 7° .058± .005 (1.49± .13) .125± .005 (3.18± .13) .008 (.20) 5° max. .050 (1.27) typ. .021 (.53) ISO Method A .020± .004 (.51± .10) 2 plcs. R.010 (.25) max. Lead Coplanarity ±.0015 (.04) max. i178003 Dual Channel SOIC-8 .120±.002 (3.05±.05) R .010 (.13) CL .154±.002 (3.91±.05) .240 (6.10) .050 (1.27) .014 (.36) .036 (.91) .170 (4.32) .260 (6.6) .016 (.41) Pin One I.D. .230±.002 (5.84±.05) .045 (1.14) 7° .015±.002 (.38±.05) 40° .0585±.002 (1.49±.05) ISO Method A .004 (.10) .008 (.20) .008 (.20) .050(1.27) Typ. .040 (1.02) i178020 www.vishay.com 10 .020±.004 (.51±.10) 2 Plcs. 5° Max. R.010 (.25) Max. .125±.002 (3.18±.05) Lead coplanarity ±.001 Max. Document Number 84607 Rev. 1.3, 24-Nov-04 SFH6745T / 46T / 47T / 55T / 56T / 57T Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 84607 Rev. 1.3, 24-Nov-04 www.vishay.com 11
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