SI1912EDH-T1-E3

Si1912EDH Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch D1 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code CA XX 1k 1k G1 YY S1 D2 G2 Lot Traceability and Date Code Part # Code Top View S1 S2 Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a ID TA = 85 °C Continuous Diode-Current (Diode Conduction)a Maximum Power Dissipationa 1.28 1.13 0.81 4 IS TA = 25 °C PD TA = 85 °C Operating Junction and Storage Temperature Range V 0.92 IDM Pulsed Drain Current 0.61 0.48 0.74 0.57 0.38 0.30 TJ, Tstg Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71408 S10-1054-Rev. B, 03-May-10 www.vishay.com 1 Si1912EDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS = VGS , ID = 100 µA 0.45 Typ. Max. Unit VDS = 0 V, VGS = ± 4.5 V ±1 µA VDS = 0 V, VGS = ± 12 V ± 10 mA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 85 °C 5 Static Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V RDS(on) µA 2 A VGS = 4.5 V, ID = 1.13 A Drain-Source On-State Resistancea V 0.220 0.280 VGS = 2.5 V, ID = 0.99 A 0.281 0.360 VGS = 1.8 V, ID = 0.2 A 0.344 0.450 Forward Transconductancea gfs VDS = 10 V, ID = 1.13 A 2.6 Diode Forward Voltagea VSD IS = 0.48 A, VGS = 0 V 0.8 1.2 0.65 1 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 1.13 A 0.2 nC Gate-Drain Charge Qgd 0.23 Turn-On Delay Time td(on) 45 70 85 130 350 530 210 320 Rise Time tr Turn-Off Delay Time td(off) Fall Time VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω tf ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 000 1000 I GSS - Gate Current (µA) IGSS - Gate Current (mA) 8 6 4 100 10 T J = 150 °C 1 T J = 25 °C 0.1 2 0.01 0 0.001 0 www.vishay.com 2 4 8 12 16 0 3 6 9 12 V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 Document Number: 71408 S10-1054-Rev. B, 03-May-10 Si1912EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 2.0 T C = - 55 °C V GS = 5 V thru 2 V 25 °C 1.5 I D - Drain Current (A) I D - Drain Current (A) 1.5 1.5 V 1.0 125 °C 1.0 0.5 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 1.0 1.5 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 140 0.6 120 0.5 100 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.5 V DS - Drain-to-Source Voltage (V) 0.4 V GS = 1.8 V V GS = 2.5 V 0.3 V GS = 4.5 V 0.2 Ciss 80 60 40 Coss 0.1 20 Crss 0.0 0.0 0 0.5 1.0 1.5 0 2.0 12 16 ID - Drain Current (A) V DS - Drain-to-Source Voltage (V) Capacitance 20 1.6 V GS = 4.5 V ID = 1.13 A V DS = 10 V ID = 1.13 A 1.4 3 2 (Normalized) 4 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 8 On-Resistance vs. Drain Current 5 1.2 1.0 0.8 1 0 0.0 4 0.3 0.6 0.9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 71408 S10-1054-Rev. B, 03-May-10 1.2 1.5 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si1912EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 2 ID = 1.13 A TJ = 150 °C R DS(on) - On-Resistance (Ω) 0.5 I S - Source Current (A) 1 TJ = 25 °C 0.4 0.3 0.2 0.1 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 2 3 4 5 V GS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.2 5 0.1 4 ID = 100 µA 0 3 Power (W) VGS(th) Variance (V) 1 - 0.1 2 - 0.2 1 - 0.3 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 T J - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = R thJA = 170 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 t1 t2 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71408 S10-1054-Rev. B, 03-May-10 Si1912EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71408. Document Number: 71408 S10-1054-Rev. 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