Si1912EDH
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.280 @ VGS = 4.5 V 20 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V
ID (A)
1.28 1.13 1.0
D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching D PA Switch D Level Switch
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code CA XX YY G Lot Traceability and Date Code Part # Code 1 kW
D
D
1 kW G
G1
2
5
G2
D2
3
4
S2
Top View
S
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID 0.92 IDM IS 0.61 0.74 0.38 –55 to 150 4 0.48 0.57 0.30 W _C 0.81 A
Symbol
VDS VGS
5 secs
20
Steady State
Unit
V
"12 1.28 1.13
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71408 S-03176—Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
130 170 80
Maximum
170 220 100
Unit
_C/W
1
Si1912EDH
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 100 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.13 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 0.99 A VGS = 1.8 V, ID = 0.2 A Forward Transconductancea gfs VSD VDS = 10 V, ID = 1.13 A IS = 0.48 A, VGS = 0 V 2 0.220 0.281 0.344 2.6 0.80 1.2 0.280 0.360 0.450 S V W 0.45 "1 "10 1 5 V mA mA mA A
Symbol
Test Condition
Min
Typ
Max
Unit
Diode Forward Voltagea
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 1.13 A 0.65 0.2 0.23 45 85 350 210 70 130 530 320 ns 1.0 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10 10,000 1,000 I GSS – Gate Current (mA) 8 I GSS – Gate Current (m A) 100 10 1 0.1 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15
Gate Current vs. Gate-Source Voltage
6
TJ = 150_C
4
2
VGS – Gate-to-Source Voltage (V) www.vishay.com
VGS – Gate-to-Source Voltage (V) Document Number: 71408 S-03176—Rev. A, 05-Mar-01
2
Si1912EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
2.0 VGS = 5 thru 2 V 2.0 TC = –55_C 1.5 I D – Drain Current (A) 1.5 V 25_C
Vishay Siliconix
Transfer Characteristics
1.5 I D – Drain Current (A)
125_C 1.0
1.0
0.5 1V 0.0 0 1 2 3 4
0.5
0.0 0.0
0.5
1.0
1.5
2.0
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6 140 120 C – Capacitance (pF) 100
Capacitance
r DS(on) – On-Resistance ( W )
0.5
0.4
VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V
Ciss 80 60 40 Coss 20 0 Crss
0.3
0.2
0.1
0.0 0.0
0.5
1.0 ID – Drain Current (A)
1.5
2.0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 1.13 A 1.6
On-Resistance vs. Junction Temperature
3
r DS(on) – On-Resistance (W ) (Normalized)
4
1.4
VGS = 4.5 V ID = 1.13 A
1.2
2
1.0
1
0.8
0 0.0
0.3
0.6
0.9
1.2
1.5
0.6 –50
–25
0
25
50
75
100
125
150
Qg – Total Gate Charge (nC)
TJ – Junction Temperature (_C)
Document Number: 71408 S-03176—Rev. A, 05-Mar-01
www.vishay.com
3
Si1912EDH
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
2 TJ = 150_C r DS(on) – On-Resistance ( W ) 1 I S – Source Current (A) 0.6
On-Resistance vs. Gate-to-Source Voltage
0.5
0.4 ID = 1.13 A 0.3
TJ = 25_C
0.2
0.1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
0.0 0 1 2 3 4 5
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2 ID = 100 mA 5
Single Pulse Power, Junction-to-Ambient
0.1 V GS(th) Variance (V)
4
–0.0 Power (W) 3
–0.1
2
–0.2 1
–0.3
–0.4 –50
–25
0
25
50
75
100
125
150
0 0.01
0.1
1 Time (sec)
10
100
600
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1
PDM
0.05
t1 t2 1. Duty Cycle, D = t1 t2
0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
2. Per Unit Base = RthJA = 170_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71408 S-03176—Rev. A, 05-Mar-01
Si1912EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
Vishay Siliconix
0.2 0.1 0.1 0.05
0.02 Single Pulse
0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
Document Number: 71408 S-03176—Rev. A, 05-Mar-01
www.vishay.com
5
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