SI2309DS-T1-E3

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code Ordering Information: Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free) Si2309DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Avalanche Current Maximum Power Dissipationa, b L = 0.1 mH TA = 25 °C TA = 70 °C - 0.85 A -8 IAS -5 1.25 PD W 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 1.25 ID IDM Pulsed Drain Current Unit - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Leada Symbol t≤5s Steady State Steady State RthJA RthJL Typical Maximum Unit 100 130 166 45 60 °C/W Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70835 S09-0133-Rev. D, 02-Feb-09 www.vishay.com 1 Si2309DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea ± 100 VDS = - 48 V, VGS = 0 V -1 VDS = - 48 V, VGS = 0 V, TJ = 125 °C - 50 VDS ≥ - 4.5 V, VGS = - 10 V µA A 0.275 0.340 VGS = - 4.5 V, ID = - 1 A 0.406 0.550 VDS = - 4.5 V, ID = - 1 A 1.9 VDS = - 30 V, VGS = - 10 V, ID = - 1.25 A 1.15 gfs nA -6 VGS = - 10 V, ID = - 1.25 A RDS(on) Forward Transconductancea V Ω S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 5.4 VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω td(off) Turn-Off Delay Time tf Fall Time Source-Drain Rating Characteristics nC 0.92 tr Rise Time 12 10.5 20 11.5 20 15.5 30 7.5 15 ns b IS - 1.25 Pulsed Current ISM -8 Diode Forward Voltagea VSD IS = - 1.25 A, VGS = 0 V - 0.82 - 1.2 V trr IF = - 1.25 A, dI/dt = 100 A/µs 30 55 ns Continuous Current Source-Drain Reverse Recovery Time A Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 8 TC = - 55 °C VGS = 10 thru 6 V 5 5V 25 °C I D - Drain Current (A) I D - Drain Current (A) 6 4 4V 4 3 125 °C 2 2 1 3V 1 V, 2 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 70835 S09-0133-Rev. D, 02-Feb-09 Si2309DS Vishay Siliconix 1.5 500 1.2 400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.9 VGS = 4.5 V 0.6 VGS = 10 V Ciss 300 200 Coss 0.3 100 Crss 0.0 0 0 2 4 6 8 0 6 ID - Drain Current (A) 12 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.0 VDS = 30 V ID = 1.25 A VGS = 10 V ID = 1.25 A 1.8 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 6 4 1.6 1.4 1.2 1.0 2 0.8 0 0 1 2 3 4 5 0.6 - 50 6 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 10 150 1.0 R DS(on) - On-Resistance (Ω) I S - Source Current (A) - 25 TJ = 150 °C 1 TJ = 25 °C 0.8 0.6 ID = 1.25 A 0.4 0.2 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 70835 S09-0133-Rev. D, 02-Feb-09 10 www.vishay.com 3 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 12 ID = 250 µA 10 8 Power (W) VGS(th) Variance (V) 0.4 0.2 0.0 6 TA = 25 °C 4 - 0.2 2 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.01 150 0.1 10 1 100 500 Time (s) Single Pulse Power Threshold Voltage 100 I D - Drain Current (A) 10 10 µs Limited by RDS(on)* 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 * VGS 100 ms 100 s, 10 s, 1 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70835. www.vishay.com 4 Document Number: 70835 S09-0133-Rev. D, 02-Feb-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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