SI2309DS

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) 0.340 @ VGS = -10 V 0.550 @ VGS = -4.5 V ID (A) - 1.25 -1 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 100_C ID -0.85 IDM IAS -8 -5 1.25 0.8 -55 to 150 W _C A Symbol VDS VGS Limit -60 "20 -1.25 Unit V THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Leada Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70835 S-21339—Rev. B, 05-Aug-02 www.vishay.com Steady State Steady State RthJA RthJL 130 45 Symbol Typical Maximum 100 166 60 Unit _C/W 2-1 Si2309DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VDS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -48 V, VGS = 0 V VDS = -48 V, VGS = 0 V, TJ = 125_C VDS w -4.5 V, VGS = -10 V VGS = -10 V, ID = -1.25 A VGS = -4.5 V, ID = -1 A VDS = -4.5 V, ID = -1 A -6 0.275 0.406 1.9 0.340 0.550 W S -60 -1 "100 -1 -50 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -30 V, RL = 30 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -30 V, VGS = -10 V, ID = -1.25 A 5.4 1.15 0.92 10.5 11.5 15.5 7.5 20 20 30 15 ns 12 nC Source-Drain Rating Characteristicsb Continuous Current Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time IS ISM VSD trr IS = -1.25 A, VGS = 0 V IF = -1.25 A, di/dt = 100 A/ms -0.82 30 -1.25 -8 -1.2 55 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 10 thru 6 V 5V 6 I D - Drain Current (A) I D - Drain Current (A) 4 6 TC = -55_C 5 25_C Transfer Characteristics 4 4V 2 1, 2 V 0 0 2 4 6 8 10 3V 3 125_C 2 1 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2-2 Document Number: 70835 S-21339—Rev. B, 05-Aug-02 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.5 500 Capacitance r DS(on) - On-Resistance ( W ) 1.2 C - Capacitance (pF) 400 Ciss 300 0.9 VGS = 4.5 V VGS = 10 V 0.3 0.6 200 Coss 100 Crss 0.0 0 2 4 ID - Drain Current (A) 6 8 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 1.25 A Gate Charge 2.0 1.8 r DS(on) - On-Resistance (W ) (Normalized) 1.6 1.4 1.2 1.0 0.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.25 A 8 6 4 2 0 0 1 2 3 4 5 6 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 1.0 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.8 I S - Source Current (A) TJ = 150_C 1 TJ = 25_C 0.6 ID = 1.25 A 0.4 0.2 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 70835 S-21339—Rev. B, 05-Aug-02 www.vishay.com 2-3 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 ID = 250 mA 0.4 V GS(th) Variance (V) 8 0.2 Power (W) 12 10 Single Pulse Power 6 TA = 25_C 4 0.0 -0.2 2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 500 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 100 10 I D - Drain Current (A) 10 ms Limited by rDS(on) 100 ms 1 1 ms 0.1 TA = 25_C Single Pulse 10 ms 100 ms dc, 100 s, 10 s, 1 s 1 10 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70835 S-21339—Rev. B, 05-Aug-02