SI2309DS-T1

Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) 0.340 at VGS = - 10 V 0.550 at VGS = - 4.5 V ID (A) - 1.25 -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2309DS (A9)* * Marking Code Ordering Information: Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IAS PD TJ, Tstg Limit - 60 ± 20 - 1.25 - 0.85 -8 -5 1.25 0.8 - 55 to 150 W °C A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Leada Notes: a. Surface Mounted on FR4 Board. b. t ≤ 5 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70835 S-72216-Rev. C, 22-Oct-07 www.vishay.com 1 t≤5s Steady State Steady State Symbol RthJA RthJL Typical 130 45 Maximum 100 166 60 °C/W Unit Si2309DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Rating Characteristics Continuous Current Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Test Conditions VDS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 20 V VDS = - 48 V, VGS = 0 V VDS = - 48 V, VGS = 0 V, TJ = 125 °C VDS ≥ - 4.5 V, VGS = - 10 V VGS = - 10 V, ID = - 1.25 A VGS = - 4.5 V, ID = - 1 A VDS = - 4.5 V, ID = - 1 A Min - 60 -1 Typ Max Unit V ± 100 -1 - 50 nA µA A 0.275 0.406 1.9 0.340 0.550 Ω S -6 5.4 VDS = - 30 V, VGS = - 10 V, ID = - 1.25 A 1.15 0.92 10.5 VDD = - 30 V, RL = 30 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω 11.5 15.5 7.5 12 nC 20 20 30 15 ns - 1.25 -8 IS = - 1.25 A, VGS = 0 V IF = - 1.25 A, di/dt = 100 A/µs - 0.82 30 - 1.2 55 A V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 VGS = 10 thru 6 V 5V 6 I D - Drain Current (A) I D - Drain Current (A) 4 6 TC = - 55 °C 5 25 °C 4 4V 2 1, 2 V 0 0 2 4 6 8 10 3V 3 125 °C 2 1 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 70835 S-72216-Rev. C, 22-Oct-07 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 500 r DS(on) - On-Resistance (Ω) 1.2 C - Capacitance (pF) 400 Ciss 300 0.9 VGS = 4.5 V VGS = 10 V 0.3 0.6 200 Coss 100 Crss 0.0 0 2 4 ID - Drain Current (A) 6 8 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 1.25 A 2.0 1.8 r DS(on) - On-Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 6 0.6 - 50 VGS = 10 V ID = 1.25 A Capacitance 8 6 4 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 10 1.0 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (Ω) 0.8 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.6 ID = 1.25 A 0.4 0.2 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 70835 S-72216-Rev. C, 22-Oct-07 www.vishay.com 3 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 ID = 250 µA 0.4 V GS(th) Variance (V) 8 0.2 Power (W) 12 10 6 TA = 25 °C 4 0.0 - 0.2 2 - 0.4 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0 0.01 0.1 1 Time (s) 10 100 500 Threshold Voltage 100 Single Pulse Power 10 ID - Drain Current (A) Limited by rDS(on)* 1 10 µs 100 µs 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms DC, 100 s, 10 s, 1 s 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 500 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70835. www.vishay.com 4 Document Number: 70835 S-72216-Rev. C, 22-Oct-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1