SI3443CDV-T1-BE3

Si3443CDV Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.060 at VGS = - 4.5 V - 4.7 0.084 at VGS = - 2.7 V - 3.9 0.100 at VGS = - 2.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7.53 nC APPLICATIONS • HDD • Asynchronous Rectification • Load Switch for Portable Devices TSOP-6 Top View 3 mm 1 6 2 5 (4) S (3) G Marking Code 3 AL 4 XXX Lot Traceability and Date Code Part # Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3443CDV-T1-E3 (Lead (Pb)-free) Si3443CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range V - 4.7b, c - 3.4b, c - 20 - 2.67 - 1.71b, c 3.2 2.05 IDM Pulsed Drain Current Unit Limit - 20 ± 12 - 5.97 - 4.6 IS PD A 2b, c 1.28b, c - 55 to 150 TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter t5s Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 110 °C/W. Document Number: 74495 S12-0335-Rev. C, 13-Feb-12 Symbol RthJA RthJF Typical 51 32 Maximum 62.5 39 Unit °C/W www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3443CDV Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ V - 18.8 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 1.5 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS - 5 V, VGS = - 4.5 V 3.25 - 0.6 - 20 µA A VGS - 4.5 V, ID = - 4.7 A 0.0500 0.0600 VGS - 2.7 V, ID = - 3.9 A 0.0692 0.0840 VGS - 2.5 V, ID = - 3.4 A 0.0830 0.1000 VDS = - 10 V, ID = - 4.7 A 15 VDS = - 10 V, VGS = 0 V, f = 1 MHz 132 VDS = - 10 V, VGS = - 5 V, ID = - 4.7 A 8.26 12.4 7.53 11.3  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 610 105 tr Rise Time td(off) Turn-Off Delay Time nC 2.37 f = 1 MHz VDD = - 10 V, RL = 2.12  ID  - 4.7 A, VGEN = - 4.5 V, Rg = 1  tf Fall Time 1.53 VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A td(on) Turn-On Delay Time pF 1.7 8.5 12.75 27 41 59 88.5 30 45 11 16.5  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 2.67 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 20 IS = - 1.7 A IF = - 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 20 30 ns 9 13.5 nC 15 5.1 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74495 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 4.0 VGS = 5 V thru 3.5 V VGS = 3.0 V 3.2 I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 2.5 V 8 VGS = 2.0 V 4 2.4 1.6 TC = 125 °C 0.8 TC = - 55 °C TC = 25 °C VGS = 1.5 V 0 0 1 2 3 0.0 0.0 4 0.6 1.2 1.8 2.4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1200 0.15 900 VGS = 2.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3.0 0.10 VGS = 4.5 V Ciss 600 0.05 300 0.00 0 Coss Crss 0 4 8 12 16 20 0 8 4 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 5 20 1.4 R DS(on) - On-Resistance (Normalized) ID = 4.7 A VGS - Gate-to-Source Voltage (V) 12 ID - Drain Current (A) 4 VDS = 10 V VDS = 16 V 3 2 1 0 0 2 4 6 8 10 VGS = 4.5 V ID = 4.7 A 1.2 VGS = 2.5 V ID = 3.4 A 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74495 S12-0335-Rev. C, 13-Feb-12 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.15 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.7 A 1 TJ = 150 °C 0.1 TJ = 25 °C 0.01 0.12 0.09 TA = 125 °C 0.06 0.00 0.001 0.0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) 0 1.0 2 3 4 5 On-Resistance vs. Gate-to-Source Voltage 1.5 50 1.3 40 Power (W) V GS(th) (V) 1 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.1 ID = 250 µA 0.9 30 20 10 0.7 0.5 - 50 TA = 25 °C 0.03 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 74495 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3443CDV Vishay Siliconix 8 4 6 3 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 2 0 2 1 0 0 25 50 75 100 125 150 0 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power, Junction-to-Foot 125 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74495 S12-0335-Rev. C, 13-Feb-12 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si3443CDV Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74495. www.vishay.com 6 Document Number: 74495 S12-0335-Rev. C, 13-Feb-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TSOP: 5/6−LEAD JEDEC Part Number: MO-193C e1 e1 5 4 6 E1 1 2 5 4 E E1 1 3 2 3 -B- e b E -B- e 0.15 M C B A 5-LEAD TSOP b 0.15 M C B A 6-LEAD TSOP 4x 1 -A- D 0.17 Ref c R R A2 A L2 Gauge Plane Seating Plane Seating Plane 0.08 C L A1 -C- (L1) 4x 1 MILLIMETERS Dim A A1 A2 b c D E E1 e e1 L L1 L2 R Min Nom Max Min Nom Max 0.91 - 1.10 0.036 - 0.043 0.01 - 0.10 0.0004 - 0.004 0.90 - 1.00 0.035 0.038 0.039 0.30 0.32 0.45 0.012 0.013 0.018 0.10 0.15 0.20 0.004 0.006 0.008 2.95 3.05 3.10 0.116 0.120 0.122 2.70 2.85 2.98 0.106 0.112 0.117 1.55 1.65 1.70 0.061 0.065 0.067 0.95 BSC 0.0374 BSC 1.80 1.90 2.00 0.071 0.075 0.079 0.32 - 0.50 0.012 - 0.020 0.60 Ref 0.024 Ref 0.25 BSC 0.010 BSC 0.10 - - 0.004 - - 0 4 8 0 4 8 7 Nom 1 ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 Document Number: 71200 18-Dec-06 INCHES 7 Nom www.vishay.com 1 PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern For TSOP-5L / TSOP-6L 5 1 2 4 6 5 4 3 1 2 3 TSOP 5L TSOP 6L 0.036 [0.922] 0.136 [3.444] 0.064 [1.626] 0.095 [2.408] 0.037 [0.950] 0.020 [0.508] 0.017 [0.442] Note • All dimensions are in inches (millimeter) ECN: C22-0860-Rev. B, 24-Oct-2022 DWG: 3010 Revision: 24-Oct-2022 Document Number: 72610 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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