SI3983DV-T1-E3

Si3983DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Symetrical Dual P-Channel • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch TSOP-6 Top View G1 1 3 mm S1 6 D1 S2 2 5 S1 G2 3 4 D2 S2 G1 G2 2.85 mm D1 D2 P-Channel MOSFET P-Channel MOSFET Ordering Information: Si3983DV-T1-E3 (Lead (Pb)-free) Si3983DV-T1-GE3 (Lead (Pb)-free and Halogen free) Marking Code: MDxxx ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 2.1 - 2.0 - 1.7 -8 - 1.05 A - 0.75 1.15 0.83 0.73 0.53 TJ, Tstg Operating Junction and Storage Temperature Range V - 2.5 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 93 110 130 150 90 90 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72316 S09-2277-Rev. D, 02-Nov-09 www.vishay.com 1 Si3983DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.40 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 2.5 A 0.086 0.110 RDS(on) VGS = - 2.5 V, ID = - 2.0 A 0.116 0.145 VGS = - 1.8 V, ID = - 1.0 A 0.170 0.220 gfs VDS = - 5 V, ID = - 2.5 A 6 VSD IS = - 1.05 A, VGS = 0 V - 0.8 - 1.1 5 7.5 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A 0.68 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a - 1.1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C - 10 µA -5 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 1.30 28 45 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 55 85 55 85 32 50 IF = - 1.05 A, dI/dt = 100 A/µs 25 40 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 6 TC = - 55 °C 25 °C 6 2V I D - Drain Current (A) I D - Drain Current (A) 7 VGS = 5 V thru 2.5 V 7 5 4 3 1.5 V 2 125 °C 5 4 3 2 1 1 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72316 S09-2277-Rev. D, 02-Nov-09 Si3983DV Vishay Siliconix 25 °C, unless otherwise noted 0.75 650 0.60 520 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 0.45 0.30 VGS = 1.8 V VGS = 2.5 V 0.15 Ciss 390 260 Coss 130 Crss VGS = 4.5 V 0 0.00 0 1 2 3 4 5 6 7 0 8 4 8 20 Capacitance 1.6 6.5 VGS = 4.5 V ID = 2.5 A VDS = 10 V ID = 2.5 A 1.4 3.9 2.6 (Normalized) 5.2 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 1.2 1.0 0.8 1.3 0.6 - 50 0.0 0 1 2 3 4 5 6 - 25 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.5 R DS(on) - On-Resistance (Ω) 10 TJ = 150 °C 1 TJ = 25 °C 0.4 0.3 ID = 2.5 A 0.2 0.1 0.0 0.1 0.00 25 TJ - Junction Temperature (°C) Gate Charge I S - Source Current (A) 12 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72316 S09-2277-Rev. D, 02-Nov-09 5 www.vishay.com 3 Si3983DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 8 0.3 0.2 Power (W) V GS(th) Variance (V) 6 ID = 250 µA 0.1 4 0.0 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 30 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) Limited by R DS(on) * 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72316 S09-2277-Rev. D, 02-Nov-09 Si3983DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72316. Document Number: 72316 S09-2277-Rev. 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