SI4396DY-T1-E3

Si4396DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 30 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V 16 12.7 Qg (Typ.) Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested 13.3 nC SCHOTTKY AND BODY DIODE PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IS (A) 0.4 at 2 A 5a 30 APPLICATIONS • Notebook Logic DC/DC - Low Side SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Schottky Diode G Top View N-Channel MOSFET Ordering Information: Si4396DY-T1-E3 (Lead (Pb)-free) Si4396DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit 30 ± 20 16 12.7 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD A 5 2.8b, c 20 20 5.4 3.4 mJ W 3.1b, c 2.0b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V 12.3b, c 9.7b, c 40 IDM Pulsed Drain Current Unit °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typ. 34 Max. 40 17 23 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 74252 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 1 Si4396DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID= 250 µA 1.2 IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V 2.6 V ± 100 nA VDS = 30 V, VGS = 0 V 0.18 1 VDS = 30 V, VGS = 0 V, TJ = 100 °C 22 100 VGS = 10 V, ID = 10 A 0.0095 0.0115 VGS = 4.5 V, ID = 8 A 0.0132 0.0160 VDS = 15 V, ID = 10 A 40 VDS ≥ 5 V, VGS = 10 V RDS(on) gfs 20 mA A Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1675 VDS = 15 V, VGS = 0 V, f = 1 MHz 410 VDS = 15 V, VGS = 10 V, ID = 10 A 29.6 45 13.3 20 pF 150 VDS = 15 V, VGS = 4.5 V, ID = 10 A 4.5 f = 1 MHz 1.55 nC 4.3 td(on) 2.4 22 33 71 110 22 33 tf 7 14 td(on) 11 18 29 45 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 24 36 8 15 Ω ns Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C 5 40 IS = 2 A 0.35 0.4 29 45 ns 18 27 nC Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta 14 Reverse Recovery Rise Time tb 15 IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C A V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74252 S09-0392-Rev. B, 09-Mar-09 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 50 1.6 VGS = 10 V thru 4 V ID - Drain Current (A) ID - Drain Current (A) 40 30 20 3V 10 1.2 TC = 125 °C 0.8 TC = 25 °C 0.4 TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.018 2200 0.016 1760 VGS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 0.014 0.012 0.010 Ciss 1320 880 Coss 440 VGS = 10 V Crss 0.008 0 0 10 20 30 40 0 50 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.7 ID = 10 A ID = 10 A VDS = 10 V 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 ID - Drain Current (A) 10 VDS = 15 V 6 VDS = 20 V 4 1.5 VGS = 4.5 V 1.3 VGS = 10 V 1.1 0.9 2 0 0.0 4 6.2 12.4 18.6 24.8 31.0 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74252 S09-0392-Rev. B, 09-Mar-09 150 www.vishay.com 3 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 RDS(on) - Drain-to-Source On-Resistance (Ω) IS - Source Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 0.1 ID = 10 A 0.08 0.06 0.04 TA = 125 °C 0.02 TA = 25 °C 0.00 0.0 0.2 0.6 0.4 1 0.8 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1 10 200 10-1 30 V 10-2 10-3 Power (W) IR - Reverse Current (A) 160 20 V 120 80 10-4 40 10-5 10-6 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Junction Temperature (°C) Time (s) Reverse Current (Schottky) Junction-to-Ambient 1 10 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 74252 S09-0392-Rev. B, 09-Mar-09 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 19 Drain Current (A) 15 11 8 4 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 7.0 2.0 5.6 1.6 4.2 1.2 Power (W) Power (W) Current Derating* 2.8 0.8 0.4 1.4 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74252 S09-0392-Rev. B, 09-Mar-09 www.vishay.com 5 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74252. www.vishay.com 6 Document Number: 74252 S09-0392-Rev. B, 09-Mar-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1