SI4396DY

Si4396DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0115 at VGS = 10 V 0.016 at VGS = 4.5 V ID (A)a 16 12.7 Qg (Typ) 13.3 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook Logic DC/DC - Low Side RoHS COMPLIANT SCHOTTKY AND BODY DIODE PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.4 at 2 A IS (A) 5a SO-8 S S S G 1 2 3 4 Top View Ordering Information : Si4396DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G N-Channel MOSFET D Schottky Diode S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 16 12.7 12.3b, c 9.7b, c 40 5 2.8b, c 20 20 5.4 3.4 3.1b, c 2.0b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec. d. Maximum under Steady State conditions is 85 °C/W. Document Number: 74252 S-61223-Rev. A, 17-Jul-06 www.vishay.com 1 t ≤ 10 sec Steady State Symbol RthJA RthJF Typ 34 17 Max 40 23 Unit °C/W Si4396DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On -State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID= 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 100 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A VDS = 15 V, ID = 10 A Min 30 1.2 Typ Max Unit V 2.6 ± 100 0.18 22 1 100 V nA mA A 20 0.0095 0.0132 40 0.0115 0.0160 Ω S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 1675 VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, RG = 1 Ω 410 150 29.6 13.3 4.5 4.3 1.55 22 71 22 7 11 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, RG = 1 Ω 29 24 8 TC = 25 °C IS = 2 A IF = 4 A, di/dt = 100 A/µs, TJ = 25 °C 0.35 29 18 14 15 2.4 33 110 33 14 18 45 36 15 5 40 0.4 45 27 ns Ω 45 20 nC pF Drain-Source Body Diode and Schottky Characteristics A V ns nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74252 S-61223-Rev. A, 17-Jul-06 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 50 25 °C, unless noted 2.0 I D – Drain Current (A) VGS= 10 thru 4 V 30 I D – Drain Current (A) 40 1.6 1.2 TC = 125 °C 0.8 20 10 3V 0.4 TC = 25 °C TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Output Characteristics 0.018 2200 Transfer Characteristics rDS(on) – On-Resistance (Ω) 0.016 VGS = 4.5 V 0.014 C – Capacitance (pF) 1760 Ciss 1320 0.012 880 0.010 VGS = 10 V 440 Coss Crss 0 4 8 12 16 20 0.008 0 10 20 30 40 50 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 10 A V GS – Gate-to-Source Voltage (V) VDS = 10 V 8 rDS(on) – On-Resistance (Normalized) VDS = 15 V 6 VDS = 20 V 4 1.5 1.7 ID = 10 A Capacitance VGS = 4.5 V 1.3 1.1 VGS = 10 V 2 0.9 0 0.0 6.2 12.4 18.6 24.8 31.0 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74252 S-61223-Rev. A, 17-Jul-06 www.vishay.com 3 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 100 rDS(on) – Drain-to-Source On-Resistance (Ω) 0.10 ID = 10 A 0.08 I S - Source Current (A) TJ = 150 °C 10 0.06 TA = 125 °C 0.04 TJ = 25 °C 1 0.02 TA = 25 °C 0.00 0 2 4 6 8 10 0.1 0.0 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1 200 On-Resistance vs. Gate-to-Source Voltage 0.1 160 IR - Reverse (A) 30 V 0.01 20 V Power (W) 120 0.001 80 0.0001 0.00001 40 0.000001 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 Reverse Current (Schottky) 100 TJ – Temperature (°C) Junction-to-Ambient *Limited by rDS(on) 10 I D – D r a in C u r r e n t ( A ) 1 ms 10 ms 1 100 ms 1s 10 s dc TA = 25 °C Single Pulse 0.1 *VGS 1 10 VDS – Drain-to-Source Voltage (V) minimum V at which rDS(on) is specified GS 100 0.1 0.01 Safe Operating Area www.vishay.com 4 Document Number: 74252 S-61223-Rev. A, 17-Jul-06 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 19 15 Drain Current (A) 11 8 4 0 0 25 50 75 100 125 150 TC – Case Temperature (°C) Current Derating* 7.0 2.0 5.6 1.6 Power (W) 4.2 Power (W) 0 25 50 75 100 125 150 1.2 2.8 0.8 1.4 0.4 0.0 0.0 0 25 50 75 100 125 150 TC – Case Temperature (°C) TA – Case Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74252 S-61223-Rev. A, 17-Jul-06 www.vishay.com 5 Si4396DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 °C/W Single Pulse 0.01 10- 3 10- 2 10- 1 10 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74252 www.vishay.com 6 Document Number: 74252 S-61223-Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1