SI4831BDY-T1-E3

Si4831BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.042 at VGS = - 10 V - 6.6 0.065 at VGS = - 4.5 V - 5.3 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested Qg (Typ.) 7.8 APPLICATIONS SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage ID (A)a 30 0.53 V at 3 A 3.0 • HDD • Asynchronous Rectification SO-8 A A S G 8 K 2 7 K 3 6 D 4 5 D 1 S K D A G Top View Ordering Information: Si4831BDY-T1-E3 (Lead (Pb)-free) Si4831BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C - 5.1b, c - 3.9b, c - 30 - 2.7 IS - 1.6b, c - 3b - 20 3.3 2.1 IF Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET and Schottky) ID IDM Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Limit - 30 - 30 ± 20 - 6.6 - 5.2 IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD 2.0b, c 1.2b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET and Schottky)b, c, d Maximum Junction-to-Foot (Drain) (MOSFET and Schottky) Notes: a. Based on TC = 25 °C. b. Surface Mounted on FR4 board. c. t ≤ 10 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 Symbol RthJA RthJF Typical 53 30 Maximum 62.5 37 Unit °C/W www.vishay.com 1 Si4831BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate Threshold Voltage Gate-Body Leakage mV/°C 3.6 VDS = VGS, ID = - 250 µA -3 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 75 °C - 10 IDSS On-State Drain Currenta ID(on) Forward Transconductancea - 30 ID = 250 µA VGS(th) Zero Gate Voltage Drain Current Drain-Source On-State Resistancea V RDS(on) gfs VDS ≥ - 5 V, VGS = - 10 V -1 - 10 µA A VGS = - 10 V, ID = - 5 A 0.034 0.042 VGS = - 4.5 V, ID = - 3 A 0.052 0.065 VDS = - 15 V, ID = - 5 A 11 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 625 VDS = - 15 V, VGS = 0 V, f = 1 MHz VDS = - 15 V, VGS = - 10 V, ID = - 5 A VDS = - 15 V, VGS = - 4.5 V, ID = - 5 A Turn-On Delay Time tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 1.6 nC 3.5 7 35 55 VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 100 150 22 35 14 12 20 8 16 8 16 24 40 7 14 VDD = - 15 V, RL = 3 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω tf Fall Time 26 12 tf td(off) Turn-Off Delay Time 17 7.8 td(on) tr Rise Time pF 115 f = 1 MHz td(on) Rise Time 150 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 3.3 - 30 IS = - 1.4 A, VGS = 0 V - 0.78 - 1.2 A V Body Diode Reverse Recovery Time trr 30 45 ns Body Diode Reverse Recovery Charge Qrr 15 25 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C 14 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 Si4831BDY Vishay Siliconix SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 3 A IF = 3 A, TJ = 125 °C VR = 30 V VR = 30 V, TJ = 75 °C VR = 30 V, TJ = 125 °C VR = 15 V Min. Typ. 0.485 0.42 0.008 0.4 6.5 102 Max. 0.53 0.47 0.1 5 20 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 www.vishay.com 3 Si4831BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 2.0 VGS = 10 V thru 5 V 1.6 18 I D - Drain Current (A) I D - Drain Current (A) 24 4V 12 6 1.2 TJ = 25 °C 0.8 TJ = 125 °C 0.4 3V - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 2.5 0.8 VDS - Drain-to-Source Voltage (V) 1000 0.08 800 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3.2 4.0 Transfer Characteristics 0.10 VGS = 4.5 V VGS = 10 V 0.04 2.4 VGS - Gate-to-Source Voltage (V) Output Characteristics 0.06 1.6 Ciss 600 400 Coss 200 0.02 Crss 0 0.00 0 6 12 18 24 0 30 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 VDS = 10 V ID = 5 A ID = 5 A VGS = 10 V 8 VDS = 15 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 6 VDS = 20 V 4 1.5 1.2 VGS = 4.5 V 0.9 2 0 0 3.6 7.2 10.8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 14.4 18.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 Si4831BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5 A 10 TJ = 150 °C TJ = 25 °C 1 0.16 0.12 0.08 TA = 125 °C 0.04 TA = 25 °C 0 0 0.0 0.3 0.6 0.9 1.2 0 1.5 1 2 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.5 60 ID = 250 µA 48 Power (W) 0.3 VGS(th) Variance (V) 3 ID = 5 mA 0.1 36 24 - 0.1 12 - 0.3 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 1s 10 s DC 0.01 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 www.vishay.com 5 Si4831BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 ID - Drain Current (A) 6 5 3 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4.0 1.5 3.2 1.2 Power Dissipation (W) Power Dissipation (W) Current Derating* 2.4 1.6 0.8 0.9 0.6 0.3 0.0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 Si4831BDY Vishay Siliconix MOSFETS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = Single Pulse 3. TJM - TA = PDMZthJA(t) t1 t2 2. Per Unit Base = RthJA = 65 °C/W 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 www.vishay.com 7 Si4831BDY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 30 V 1 I F - Forward Current (A) I R - Reverse Current (A) 10 10 V 0.1 0.01 TJ = 150 °C TJ = 25 °C 1 0.001 0.0001 0 25 50 75 100 125 0 0.0 150 0.1 0.2 0.4 0.5 0.6 VF - Forward Voltage Drop (V) TJ - Temperature (°C) Reverse Current vs. Junction Temperature Forward Voltage Drop 500 C T - Capacitance (pF) 400 300 200 100 0 0 6 12 18 24 30 VKA - Reverse Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70483. www.vishay.com 8 Document Number: 70483 S09-0394-Rev. B, 09-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000