SI4831DY

Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.045 @ VGS = –10 V 0.090 @ VGS = –4.5 V ID (A) "5 "3.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 3 S K SO-8 A A S G 1 2 3 4 Top View 8 7 6 5 K K D D G D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Drain Current C) MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Power Dissipation (MOSFET)a, Maximum Power Dissipation (Schottky)a, b Power Dissipation (Schottky)a, Operating Junction and Storage Temperature Range Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com S FaxBack 408-970-5600 TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit –30 30 "20 "5 "3.9 "20 –1.7 3 20 2 1.28 1.83 1.17 –55 to 150 Unit V A W _C 2-1 Si4831DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t Maximum Junction-to-Ambient (t v 10 sec)a 10 sec) New Product Device MOSFET Schottky MOSFET Schottky MOSFET Symbol Typical 52 56 Maximum 62.5 68 100 110 33 40 Unit RthJA Maximum Junction-to-Ambient (t steady state) Maximum Junction-to-Ambient (t = steady state)a 82 91 27 _C/W Maximum Junction-to-Foot Maximum Junction-to-Foot Schottky Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. RthJF 32 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –24 V, VGS = 0 V VDS = –24 V, VGS = 0 V, TJ = 75_C VDS w –5 V, VGS = –10 V VGS = –10 V, ID = –5 A VGS = –4.5 V, ID = –3.5 A VDS = –15 V, ID = –5 A IS = –1.7 A, VGS = 0 V –20 0.036 0.060 9 –0.75 –1.2 0.045 0.090 W S V –1.0 "100 –1 –10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.7 A, di/dt = 100 A/ms V, 15 VDD = –15 V, RL = 15 W ID ^ –1 A, VGEN = –10 V RG = 6 W A V, VDS = –15 V VGS = –5 V ID = –5 A V, V, 10 4.5 3.6 13 15 37 14 35 25 30 70 30 70 ns 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Voltage Drop Symbol VF Test Condition IF = 3 A IF = 3 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 75_C Vr = 30 V, TJ = 125_C Vr = 15 V Min Typ 0.485 0.42 0.008 0.4 6.5 102 Max 0.53 0.47 0.1 5 20 Unit V Maximum R Mi Reverse Leakage Current Lk C Irm CT mA A Junction Capacitance www.vishay.com S FaxBack 408-970-5600 pF 2-2 Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Si4831DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 20 Vishay Siliconix MOSFET Transfer Characteristics 16 I D – Drain Current (A) 16 I D – Drain Current (A) 12 4V 8 12 8 TC = 125_C 4 25_C –55_C 0 4 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.16 1500 Capacitance Ciss r DS(on)– On-Resistance ( W ) 1200 C – Capacitance (pF) 0.12 900 0.08 VGS = 4.5 V 600 Coss 300 Crss VGS = 10 V 0.04 0 0 4 8 12 16 20 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 VDS = 10 V ID = 5.7 A V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 –50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.7 A 6 4 2 0 0 4 8 12 16 20 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si4831DY Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.20 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 10 TJ = 150_C 0.16 0.12 TJ = 25_C 0.08 ID = 5.7 A 0.04 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) 0.4 0.2 –0.0 –0.2 8 –0.4 –0.6 –50 0 –25 0 25 50 75 100 125 150 ID = 250 mA Power (W) 24 40 Single Pulse Power, Junction-to-Ambient 32 16 0.01 0.1 1 Time (sec) 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71061 S-61859—Rev. A, 10-Oct-99 Si4831DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 40 10 I R – Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F – Forward Current (A) 1 TJ = 150_C 1 0.1 30 V 10 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) 0.1 0 0.2 0.4 0.6 0.8 VF – Forward Voltage Drop (V) 500 Capacitance CT – Junction Capacitance (pF) 400 300 200 100 0 0 6 12 18 24 30 VKA – Reverse Voltage (V Document Number: 71061 S-61859—Rev. A, 10-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-5 Si4831DY Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 91_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 71061 S-61859—Rev. A, 10-Oct-99