SI4943CDY-T1-E3

New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 20 APPLICATIONS • Load Switching - Computer - Game Systems • Battery Switching - 2-Cell Li-Ion SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 G1 S2 G2 Top View Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free) Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C Pulsed Sorce-Drain Current Single Pulse Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS - 1.7b, c - 30 - 11 6 3.1 2 ISM IAS EAS PD 2b, c 1.28b, c - 50 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V - 8b, c, e - 6.7b, c - 30 - 2.5 IDM Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Limit - 20 ± 20 - 8e - 8e A mJ W °C THERMAL RESISTANCE RATINGS Limit Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typical 50 30 Maximum 62.5 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 110 °C/W. e. Package Limited. Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 1 New Product Si4943CDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistanceb RDS(on) Forward Transconductanceb Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg gfs tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a Pulse Diode Forward Current Body Diode Voltage V nA VDS = - 20 V, VGS = 0 V -1 - 10 VDS = 5 V, VGS = - 10 V VGS = - 10 V, ID = - 8.3 A - 30 0.0192 VGS = - 4.5 V, ID = - 6.4 A 0.0275 0.0330 VDS = - 10 V, ID = - 8.3 A 19 1945 VDS = - 10 V, VGS = 0 V, f = 1 MHz 460 pF 385 VDS = - 10 V, VGS = - 10 V, ID = - 8.3 A VDS = - 10 V, VGS = - 4.5 V, ID = - 8.3 A 41 62 20 30 7 VDD = - 10 V, RL = 1.5 Ω ID ≅ - 6.7 A, VGEN = - 10 V, Rg = 1 Ω 0.5 2.5 5 13 20 11 17 35 53 15 75 VDD = - 10 V, RL = 1.5 Ω ID ≅ - 6.7 A, VGEN = - 4.5 V, Rg = 1 Ω 71 107 29 44 15 23 TC = 25 °C - 2.5 ISM VSD trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb nC 9 f = 1 MHz 10 Body Diode Reverse Recovery Time Ω S 50 IS µA A 0.0160 tf Fall Time -3 - 100 tf td(off) Turn-Off Delay Time -1 td(on) tr Rise Time mV/°C 5.4 VDS = - 20 V, VGS = 0 V, TJ = 55 °C td(on) Turn-On Delay Time V - 21 Ω ns A - 30 IS = - 6.7 A IF = - 6.7 A, dI/dt = 100 A/µs, TJ = 25 °C - 0.77 - 1.2 V 30 45 ns 17 26 nC 13 17 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 30 VGS = 10 V thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 6 VGS = 4 V 18 12 4 TC = 125 °C 2 6 TC = 25 °C VGS = 3 V VGS = 2 V TC = - 55 °C 0 0 0 1 2 3 4 0 5 1 Output Characteristics 4 Transfer Characteristics 0.08 3000 2400 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) VGS = 4.5 V 0.04 Ciss 1800 1200 Coss 0.02 600 Crss VGS = 10 V 0.00 0 0 5 10 15 20 25 30 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.5 VGS = 10 V, ID = 8.3 A ID = 8.3 A 8 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2 VDS = 10 V 6 VDS = 16 V 4 1.3 1.1 VGS = 4.5 V, ID = 6.4 A 0.9 2 0 0 10 20 30 Qg - Total Gate Charge (nC) Gate Charge Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 40 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.04 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 8.3 A 10 TJ = 150 °C 1 TJ = 25 °C 0.03 TJ = 125 °C 0.02 0.01 TJ = 25 °C 0 0.1 0.0 0.3 0.6 0.9 0 1.2 4 VSD - Source-to-Drain Voltage (V) 8 12 16 20 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 2.5 100 2.3 80 ID = 250 µA Power (W) VGS(th) (V) 2.1 1.9 60 40 1.7 20 1.5 1.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s DC 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 I D - Drain Current (A) 9 Package Limited 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 4 1.5 1.2 Power (W) Power (W) 3 2 0.9 0.6 1 0.3 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 www.vishay.com 5 New Product Si4943CDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69985. www.vishay.com 6 Document Number: 69985 S09-0704-Rev. B, 27-Apr-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000