SI4943DY

Si4943DY New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 0.030 @ VGS = - 4.5 V - 6.7 FEATURES D TrenchFETr Power MOSFET ID (A) - 8.4 rDS(on) (W) 0.019 @ VGS = - 10 V APPLICATIONS D Load Switching - Computer - Game Systems D Battery Switching - 2-Cell Li-lon S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 D1 D2 D2 8 7 6 5 D1 D1 D2 D2 G1 G2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 6.7 IDM IS - 1.7 2.0 1.3 - 55 to 150 - 30 - 0.9 1.1 0.7 W _C - 5.1 A Symbol VDS VGS 10 secs Steady State - 20 "20 Unit V - 8.4 - 6.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 71682 S-21192—Rev. B, 29-Jul-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 85 26 Maximum 62.5 110 35 Unit _C/W 1 Si4943DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 55_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 8.4 A VGS = - 4.5 V, ID = - 6.7 A VDS = - 10 V, ID = - 8.4 A IS = - 1.7 A, VGS = 0 V - 30 0.016 0.025 18 - 0.8 - 1.2 0.019 0.030 -1 "100 -1 -5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 10 V, VGS = - 10 V, ID = - 8.4 A 36 6.8 5.0 11 24 56 30 50 17 38 85 45 80 ns 54 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 4V 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 6 3V 25_C - 55_C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71682 S-21192—Rev. B, 29-Jul-02 Si4943DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 3000 Vishay Siliconix Capacitance VGS = 4.5 V 0.03 C - Capacitance (pF) 0.04 2500 Ciss 2000 1500 0.02 VGS = 10 V 1000 Coss 0.01 500 Crss 0.00 0 6 12 18 24 30 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 8.4 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.4 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 16 24 32 40 1.2 4 1.0 2 0.8 0 0 8 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S - Source Current (A) 0.06 On-Resistance vs. Gate-to-Source Voltage 10 r DS(on) - On-Resistance ( W ) 0.05 0.04 ID = 8.4 A 0.03 TJ = 25_C 0.02 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71682 S-21192—Rev. B, 29-Jul-02 www.vishay.com 3 Si4943DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 50 Single Pulse Power 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 40 30 0.2 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 85_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71682 S-21192—Rev. B, 29-Jul-02