SI7483ADP-T1-E3

Si7483ADP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0057 at VGS = - 10 V - 24 0.0095 at VGS = - 4.5 V - 17 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg tested APPLICATIONS PowerPAK SO-8 • Battery and Load Switching - Notebook Computers - Notebook Battery Packs S 6.15 mm 5.15 mm 1 S 2 S 3 G S 4 D 8 D 7 D G 6 D 5 Bottom View D Ordering Information: Si7483ADP-T1-E3 (Lead (Pb)-free) Si7483ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c 10 s - 24 - 19 - 4.5 5.4 3.4 Steady State - 30 ± 20 - 14 - 11 - 60 - 1.6 1.9 1.2 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit °C/W Notes a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 www.vishay.com 1 Si7483ADP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 1.0 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA IDSS VDS = - 30 V, VGS = 0 V -1 Zero Gate Voltage Drain Current VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 10 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Voltagea - 30 A VGS = - 10 V, ID = - 24 A 0.0047 0.0057 VGS = - 4.5 V, ID = - 17 A 0.0075 0.0095 gfs VDS = - 15 V, ID = - 24 A 70 VSD IS = - 2.9 A, VGS = 0 V - 0.73 - 1.1 120 180 RDS(on) Forward Transconductancea Diode Forward VDS = - 5 V, VGS = - 10 V µA Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance VDS = - 15 V, VGS = - 10 V, ID = - 24 A 18 Rg Turn-On Delay Time 1.6 td(on) Rise Time VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 10 V, Rg = 6 Ω tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 33 IF = - 2.9 A, dI/dt = 100 A/µs 3.2 4.8 22 35 33 50 210 320 130 200 70 130 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 60 VGS = 10 V thru 4 V 50 40 I D - Drain Current (A) I D - Drain Current (A) 50 30 20 3V 10 40 30 20 TC = 125 °C 10 25 °C - 55 °C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.5 4.0 Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 Si7483ADP Vishay Siliconix 0.015 8200 0.012 6560 0.009 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted VGS = 4.5 V 0.006 VGS = 10 V Ciss 4920 3280 Coss 1640 0.003 Crss 0 0.000 0 10 20 30 40 0 50 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.6 VDS = 15 V ID = 24 A 8 VGS = 10 V ID = 24 A 1.4 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Drain Current 10 6 4 1.2 1.0 0.8 2 0.6 - 50 0 0 20 40 60 80 100 120 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.020 R DS(on) - On-Resistance (Ω) 10 TJ = 150 °C TJ = 25 °C 1 0.016 0.012 ID = 24 A 0.008 0.004 0.000 0.1 0.00 - 25 Qg - Total Gate Charge (nC) 50 I S - Source Current (A) 5 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7483ADP Vishay Siliconix 0.8 200 0.6 160 ID = 250 µA 0.4 120 Power (W) V GS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 80 0.0 40 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 1 ms Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s TC = 25 °C Single Pulse 0.1 0.01 0.1 1 DC 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 50 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 Si7483ADP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73025. Document Number: 73025 S09-0270-Rev. C, 16-Feb-09 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000