SI7483ADP

Si7483ADP New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −24 −17 rDS(on) (W) 0.0057 @ VGS = −10 V 0.0095 @ VGS = −4.5 V D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg tested APPLICATIONS D Battery and Load Switching − Notebook Computers − Notebook Battery Packs PowerPAK SO-8 S 6.15 mm S 1 2 S 3 S 5.15 mm G 4 G D 8 7 D 6 D 5 D D Bottom View Ordering Information: Si7483ADP-T1—E3 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −24 −19 −60 −4.5 5.4 3.4 −55 to 150 −14 −11 A −1.6 1.9 1.2 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73025 S-41525—Rev. A, 16-Aug-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 Si7483ADP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −24 A VGS = −4.5 V, ID = −17 A VDS = −15 V, ID = −24 A IS = −2.9 A, VGS = 0 V −30 0.0047 0.0075 70 −0.73 −1.1 0.0057 0.0095 −1.0 −3.0 "100 −1 −10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.9 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W V, ID ^ −1 A, VGEN = −10 V, Rg = 6 W 1.6 VDS = −15 V, VGS = −10 V, ID = −24 A 120 18 33 3.2 22 33 210 130 70 4.8 35 50 320 200 130 ns W 180 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 50 40 30 20 10 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 3V VGS = 10 thru 4 V 60 50 40 30 20 Transfer Characteristics I D − Drain Current (A) I D − Drain Current (A) TC = 125_C 10 0 0.0 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 73025 S-41525—Rev. A, 16-Aug-04 2 Si7483ADP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.015 Vishay Siliconix On-Resistance vs. Drain Current 8200 Capacitance r DS(on) − On-Resistance ( W ) 0.012 C − Capacitance (pF) 6560 Ciss 0.009 VGS = 4.5 V 4920 0.006 VGS = 10 V 3280 0.003 1640 Crss Coss 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 24 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 24 A 8 1.4 rDS(on) − On-Resiistance (Normalized) 6 1.2 4 1.0 2 0.8 0 0 20 40 60 80 100 120 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.020 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 TJ = 150_C r DS(on) − On-Resistance ( W ) 0.016 0.012 ID = 24 A 0.008 1 TJ = 25_C 0.004 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Document Number: 73025 S-41525—Rev. A, 16-Aug-04 www.vishay.com 3 Si7483ADP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 V GS(th) Variance (V) 0.4 0.2 0.0 −0.2 −0.4 −50 40 ID = 250 mA Power (W) 120 200 Single Pulse Power 160 80 −25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ − Temperature (_C) 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area 1 ms 10 ms 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 1 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 50_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73025 S-41525—Rev. A, 16-Aug-04 Si7483ADP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73025 S-41525—Rev. A, 16-Aug-04 www.vishay.com 5