SQJQ184E-T1_GE3

SQJQ184E www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET FEATURES PowerPAK K® 8 x 8L • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D • Thin 1.6 mm height S 8 m m S S G 1 7.9 S 4 mm Top View S 3 S 2 G 1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.0014 ID (A) Configuration Package G 80 430 N-Channel MOSFET S Single PowerPAK 8 x 8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 80 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 250 450 IDM 1200 IAS 65 EAS 211 TJ, Tstg c V 430 IS PD UNIT 600 200 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 40 RthJC 0.25 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S22-0703-Rev. B, 15-Aug-2022 Document Number: 77102 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ184E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 2 3 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 80 V - - 1 VGS = 0 V VDS = 80 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 80 V, TJ = 175 °C - - 500 VGS = 10 V VDS  5 V 50 - - VGS = 10 V ID = 20 A - 0.0011 0.0014 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0026 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0033 - 82 - VDS = 15 V, ID = 15 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 40 V, ID = 50 A f = 1 MHz td(on) tr td(off) VDD = 40 V, RL = 0.8 , ID  50 A, VGEN = 10 V, Rg = 1  tf - 11 435 16 010 - 1896 2655 - 92 130 - 181 272 - 51 - - 36 - 0.7 1.3 2 - 21 28 - 80 105 - 65 85 - 20 28 pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD IF = 40 A, VGS = 0 V - - 1100 - 0.7 1.2 V - 72 144 ns - 143 286 nC - 41 - Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 30 - IRM(REC) - 3.5 - Body diode peak reverse recovery current IF = 10 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0703-Rev. B, 15-Aug-2022 Document Number: 77102 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ184E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 400 200 10000 VGS = 10 V thru 5 V 160 VGS = 4 V 160 100 80 1000 1st line 2nd line 240 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 320 120 TC = 25 °C 80 100 TC = 125 °C 40 TC = -55 °C 0 10 0 2 4 6 8 10 0 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 400 10000 0.0015 1000 TC = 125 °C 200 100 100 1000 0.0010 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 300 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 100 0.0005 VGS = 10 V 0 10 0 20 40 60 80 0.0000 100 10 0 30 60 90 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 150 10000 Axis Title Axis Title 1000 Coss 1000 100 Crss 100 10 10 0 10 20 30 40 50 60 70 80 10000 ID = 50 A VDS = 40 V 8 1000 6 4 100 2 0 10 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S22-0703-Rev. B, 15-Aug-2022 1st line 2nd line Ciss 10 000 2nd line VGS - Gate-to-Source Voltage (V) 10 1st line 2nd line 2nd line C - Capacitance (pF) 100 000 200 Document Number: 77102 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ184E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 30 A 1000 1.6 VGS = 7.5 V 1.2 100 10 TJ = 150 °C 1 100 0.1 0.8 TJ = 25 °C 0.4 0.01 10 -50 -25 0 25 50 10 0 75 100 125 150 175 0.2 0.4 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 10000 0.005 10000 ID = 1 mA 1000 1st line 2nd line 92 90 88 100 86 84 0.004 1000 0.003 TJ = 150 °C 0.002 100 TJ = 125 °C 0.001 TJ = 25 °C 82 80 0 25 50 10 0 10 -50 -25 0 75 100 125 150 175 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.6 10000 10000 IDM limited 1000 0.2 1000 ID = 5 mA -0.6 ID = 250 μA -1.0 100 100 10 ms 10 1 100 BVDSS limited 0.1 10 -50 -25 0 25 50 TC = 25 °C Single pulse 0.01 0.01 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage 100 ms, 1 s, 10 s, DC Limited by RDS(on) (1) -1.4 -1.8 1000 1 ms 1st line 2nd line -0.2 2nd line ID - Drain Current (A) 100 μs 1st line 2nd line 2nd line VGS(th) - Variance (V) 1st line 94 2nd line RDS(on) - On-Resistance (Ω) 96 0.6 TJ - Junction Temperature (°C) 98 2nd line VDS - Drain-to-Source Voltage (V) 1000 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 2.0 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.4 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S22-0703-Rev. B, 15-Aug-2022 Document Number: 77102 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ184E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 0.1 Duty cycle = 0.5 0.2 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 100 Single pulse 0.01 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Axis Title Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.01 100 0.001 0.0001 0.0001 Single pulse 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient                      Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77102. S22-0703-Rev. B, 15-Aug-2022 Document Number: 77102 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L BWL Case Outline 2 c D2 E3 D5 E4 W4 D6 E2 D6 W1 D5 E5 b2 E1 E z1 b e b1 z2 L1 L A2 A1 0.25 gauge line D1 ȧ Bottom view (single) A Top view (single) DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.50 1.60 1.70 0.059 0.063 MAX. 0.067 A1 0.00 - 0.127 0.000 - 0.005 A2 0.655 0.705 0.755 0.026 0.028 0.030 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 6.84 6.94 7.04 0.269 0.273 0.277 c 0.20 0.25 0.30 0.008 0.010 0.012 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 e 1.97 2.00 2.03 0.078 0.079 0.080 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 4.21 4.31 4.41 0.166 0.170 0.174 E3 4.92 5.02 5.12 0.194 0.198 0.202 E4 3.80 3.90 4.00 0.150 0.154 0.157 E5 0.65 0.75 0.85 0.026 0.030 0.033 L 0.61 0.68 0.75 0.024 0.027 0.030 L1 1.00 1.07 1.15 0.039 0.042 0.045 W1 0.30 0.40 0.50 0.012 0.016 0.020 W4 0.32 0.37 0.42 0.013 0.015 0.017 z1 0.45 0.55 0.65 0.018 0.022 0.026 z2 1.81 1.91 2.01 0.071 0.075 0.079  0° - 5° 0° - 5° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6073 Note • Millimeter will govern Revison: 05-Aug-2019 Document Number: 79736 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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