SQJQ480E-T1_GE3

SQJQ480E www.vishay.com Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 80 RDS(on) () at VGS = 10 V • AEC-Q101 qualified 0.003 150 • 100 % Rg and UIS tested Single • Fully lead (Pb)-free device ID (A) Configuration Package • Thin 1.9 mm height PowerPAK 8 x 8L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 8 x 8L Single D D 8 m m 1 8.1 mm Top View 4 S 3 S 2 S 1 G G S Bottom View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 87 IS 124 210 IAS 53 EAS 140 TJ, Tstg Soldering Recommendations (Peak temperature) c, d V 150 IDM PD UNIT 136 45 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount b SYMBOL LIMIT RthJA 50 RthJC 1.1 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR4 material). c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1373-Rev. A, 11-Jul-16 Document Number: 76718 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ480E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 80 V - - 1 VGS = 0 V VDS = 80 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 80 V, TJ = 175 °C - - 500 VGS = 10 V VDS  5 V 50 - - VGS = 10 V ID = 20 A - 0.0024 0.0030 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0048 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0060 - 82 - VDS = 15 V, ID = 15 A V nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 40 V, ID = 10 A f = 1 MHz td(on) tr td(off) VDD = 40 V, RL = 4  ID  10 A, VGEN = 10 V, Rg = 1  tf - 6900 8625 - 3655 4570 - 250 311 - 82 144 - 11 - - 21 - 0.4 0.8 1.2 - 19 30 pF nC  - 7.3 11 - 40 60 - 15 23 - - 210 A - 0.7 1.2 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 40 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1373-Rev. A, 11-Jul-16 Document Number: 76718 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ480E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 200 10000 VGS = 10 V thru 5 V 80 100 VGS = 4 V 40 1000 80 60 TC = 25 °C 40 100 20 0 6 12 18 24 TC = 125 °C TC = -55 °C 0 10 0 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) 160 10000 120 30 10 0 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 1st line 2nd line 0.6 100 TC = 25 °C TC = 125 °C 100 TC = -55 °C 80 1000 TC = 25 °C 1st line 2nd line 1000 2nd line gfs - Transconductance (S) 1.0 0.8 10000 120 10000 0.4 10 Axis Title Axis Title 2nd line ID - Drain Current (A) 8 VDS - Drain-to-Source Voltage (V) 2nd line 1.2 0.2 6 60 40 100 TC = 125 °C 20 TC = -55 °C 0.0 0 10 0 1 2 3 4 5 10 0 3 6 ID - Drain Current (A) 2nd line Transfer Characteristics Transconductance Axis Title 100 0.002 7500 Ciss 5000 Coss Crss 10 60 100 2500 VGS = 10 V 0.000 40 80 100 0 10 0 20 40 60 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance S16-1373-Rev. A, 11-Jul-16 1000 1st line 2nd line 0.004 2nd line C - Capacitance (pF) 1000 0.006 10000 10 000 0.008 20 15 Axis Title 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 12 VGS - Gate-to-Source Voltage (V) 2nd line 0.010 0 9 80 Document Number: 76718 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ480E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.5 8 1000 6 4 100 2 0 20 40 60 80 2.1 VGS = 10 V 1.7 VGS = 7.5 V 10 -50 -25 0 25 Gate Charge On-Resistance vs. Junction Temperature Axis Title 105 0.1 100 0.01 0.001 0.4 0.6 0.8 1.0 100 1000 95 90 100 85 80 10 0.2 10000 ID = 10 mA 1st line 2nd line 1000 TJ = 25 °C TJ = 150 °C 2nd line VDS - Drain-to-Source Voltage (V) 10000 1st line 2nd line 2nd line IS - Source Current (A) 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line 10 1.2 10 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Junction Temperature (°C) 2nd line Source Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 0.015 0.5 10000 10000 0 0.009 TJ = 150 °C 0.006 100 ID = 5 mA 1000 -0.5 1st line 2nd line 1000 2nd line VGS(th) Variance (V) 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 50 Qg - Total Gate Charge (nC) 2nd line Axis Title 0 100 0.9 100 100 1 1000 1.3 0.5 10 0 10000 ID = 10 A 1st line 2nd line ID = 10 A VDS = 50 V 2nd line RDS(on) - On-Resistance (Normalized) 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 -1.0 100 ID = 250 μA -1.5 0.003 TJ = 25 °C 0.000 10 0 2 4 6 8 10 -2.0 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage S16-1373-Rev. A, 11-Jul-16 Document Number: 76718 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ480E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on) (1) 1 100 BVDSS limited 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty cycle = 0.5 Notes: PDM 0.2 0.1 t1 0.1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 180 °C/W 0.05 0.02 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient S16-1373-Rev. A, 11-Jul-16 Document Number: 76718 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ480E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.2 0.1 0.1 100 0.05 Single pulse 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                                            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76718. S16-1373-Rev. A, 11-Jul-16 Document Number: 76718 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L Case Outline D2 E5 L1 D3 K D3 D7 D5 D5 D7 D5 E1 E W3 W2 W1 D5 E2 E3 b2 K F Bottom view (single) 0.25 Gauge line Top view (single) E5 L θ e W4 D1 D E4 E1 E b1 D5 D4 A2 A1 b D6 E2 E3 W4 D6 W W3 W2 W1 D5 E4 b2 D4 b b1 D1 D e Bottom view (dual) DIM. A C A3 Top view (dual) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.70 1.80 1.90 0.067 0.071 MAX. 0.075 A1 0.00 0.08 0.13 0.000 0.003 0.005 A2 0.25 0.30 0.35 0.010 0.012 0.014 A3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 D 8.00 8.10 8.25 0.315 0.319 0.325 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D3 2.85 2.95 3.05 0.112 0.116 0.120 D4 6.11 6.21 6.31 0.241 0.244 0.248 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 D7 1.76 1.86 1.96 0.069 0.073 0.077 Revision: 16-Oct-17 Document Number: 67734 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. e 1.95 2.00 2.05 0.077 0.079 0.081 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 3.94 4.04 4.14 0.140 0.159 0.163 E3 4.69 4.79 4.89 0.185 0.189 0.193 E4 3.23 3.33 3.43 0.127 0.131 0.135 E5 0.65 0.75 0.85 0.026 0.030 0.033 F 0.00 0.10 0.15 0.000 0.004 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.80 0.90 1.00 0.031 0.035 0.039 W 0.30 0.40 0.50 0.012 0.016 0.020 W1 0.30 0.40 0.50 0.012 0.016 0.020 W2 4.39 4.49 4.59 0.173 0.177 0.181 W3 4.54 4.64 4.74 0.179 0.183 0.187 W4 0.32 0.37 0.42 0.013 0.015 0.017  6° 10° 14° 6° 10° 14° C17-1388-Rev. B, 16-Oct-17 DWG: 6026 Revision: 16-Oct-17 Document Number: 67734 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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