SQJQ150E-T1_GE3

SQJQ150E www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK K® 8 x 8L • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D • Thin 1.6 mm package S 8 m m S S G 1 7.9 S 4 mm Top View S 3 S 2 G 1 • Very low thermal resistance • Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) 40 RDS(on) () at VGS = 10 V ID (A) 233 Configuration Package G 0.0019 Single S PowerPAK 8 x 8L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 134 170 IDM 930 IAS 38 PD TJ, Tstg c V 233 IS EAS UNIT 72 187 62 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 44 RthJC 0.8 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S20-0446-Rev. A, 15-Jun-2020 Document Number: 77649 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ150E www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2 2.8 3.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS  5 V 100 - - VGS = 10 V ID = 20 A - 0.0015 0.0019 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.003 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0035 - 120 - VDS = 15 V, ID = 30 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 20 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 1.0 , ID  20 A, VGEN = 10 V, Rg = 1  tf - 3316 4643 - 1137 1592 - 134 188 - 61 92 - 17 - - 17 - 0.8 1.7 2.6 - 17 27 - 19 29 - 30 45 - 10 15 pF nC  ns Source-Drain Diode Ratings and Characteristics b Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current Pulsed current a Forward voltage VSD - 40 80 ns - 34 68 nC IRM - -1.5 - A ISM - - 660 A - 0.8 1.1 V VDD = 32 V, IFM = 15 A, di/dt = 100 A/μs IF = 50 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0446-Rev. A, 15-Jun-2020 Document Number: 77649 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ150E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 320 50 10000 10000 VGS = 10 V thru 7 V 1st line 2nd line VGS = 6 V 160 VGS = 5 V 100 80 1000 30 1st line 2nd line 2nd line ID - Drain Current (A) 1000 2nd line ID - Drain Current (A) 40 240 TC = 25 °C 20 100 10 TC = 125 °C VGS = 4 V 0 0 2 4 6 8 TC = -55 °C 0 10 10 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6 Axis Title 0.006 2nd line RDS(on) - On-Resistance (Ω) 2nd line gfs - Transconductance (S) TC = -55 °C 160 TC = 25 °C TC = 125 °C 120 80 40 10000 0.005 0.004 1000 1st line 2nd line 200 0.003 VGS = 7.5 V 0.002 100 0.001 VGS = 10 V 0 0 0 30 60 90 120 10 0 150 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 100 Axis Title Axis Title 10 000 10 10000 10000 1000 Crss 100 100 10 10 0 8 16 24 32 40 ID = 20 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Coss 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 4 100 2 0 10 0 14 28 42 56 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S20-0446-Rev. A, 15-Jun-2020 70 Document Number: 77649 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ150E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 15 A 1000 1.4 VGS = 7.5 V 1.1 100 TJ = 150 °C 10 1000 1 TJ = 25 °C 100 0.1 0.8 0.5 0.01 10 -50 -25 0 25 50 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 56 0.008 10000 10000 1000 53 52 51 100 50 0.006 1000 1st line 2nd line 54 2nd line RDS(on) - On-Resistance (Ω) ID = 1 mA 55 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 1st line 2nd line VGS = 10 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 0.004 TJ = 150 °C 100 0.002 TJ = 125 °C 49 TJ = 25 °C 48 0 10 -50 -25 0 25 50 75 100 125 150 175 10 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Drain Source Breakdown vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.6 1000 10000 10000 -0.3 -0.6 ID = 250 μA -0.9 100 100 IDM limited 1000 ID limited 10 100 μs -1.2 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Threshold Voltage 1 ms 100 Limited by RDS(on) a 1 0.1 0.01 10 ms 100 ms BVDSS limited TC = 25 °C, single pulse 1st line 2nd line ID = 5 mA 1000 2nd line ID - Drain Current (A) 0 1st line 2nd line 2nd line VGS(th) - Variance (V) 0.3 1 s, 10 s, DC 0.1 1 10 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S20-0446-Rev. A, 15-Jun-2020 Document Number: 77649 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJQ150E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title Duty cycle = 0.5 0.2 0.1 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.02 0.01 100 0.001 Single pulse 0.0001 0.0001 10 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 0.01 100 Single pulse 0.001 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77649. S20-0446-Rev. A, 15-Jun-2020 Document Number: 77649 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L BWL Case Outline 2 c D2 E3 D5 E4 W4 D6 E2 D6 W1 D5 E5 b2 E1 E z1 b e b1 z2 L1 L A2 A1 0.25 gauge line D1 ȧ Bottom view (single) A Top view (single) DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.50 1.60 1.70 0.059 0.063 MAX. 0.067 A1 0.00 - 0.127 0.000 - 0.005 A2 0.655 0.705 0.755 0.026 0.028 0.030 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 6.84 6.94 7.04 0.269 0.273 0.277 c 0.20 0.25 0.30 0.008 0.010 0.012 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 e 1.97 2.00 2.03 0.078 0.079 0.080 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 4.21 4.31 4.41 0.166 0.170 0.174 E3 4.92 5.02 5.12 0.194 0.198 0.202 E4 3.80 3.90 4.00 0.150 0.154 0.157 E5 0.65 0.75 0.85 0.026 0.030 0.033 L 0.61 0.68 0.75 0.024 0.027 0.030 L1 1.00 1.07 1.15 0.039 0.042 0.045 W1 0.30 0.40 0.50 0.012 0.016 0.020 W4 0.32 0.37 0.42 0.013 0.015 0.017 z1 0.45 0.55 0.65 0.018 0.022 0.026 z2 1.81 1.91 2.01 0.071 0.075 0.079  0° - 5° 0° - 5° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6073 Note • Millimeter will govern Revison: 05-Aug-2019 Document Number: 79736 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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