SQS405CENW-T1_GE3

SQS405CENW www.vishay.com Vishay Siliconix Automotive P-Channel 12 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 1212-8W Single D 5 3. 3 m D 6 D 7 • TrenchFET® power MOSFET D 8 • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 m 1 3.3 mm Top View 4 G Bottom View 3 S 2 S 1 S S Marking code: Q055 G PRODUCT SUMMARY VDS (V) -12 RDS(on) (Ω) at VGS = -4.5 V 0.0150 RDS(on) (Ω) at VGS = -2.5 V 0.0220 ID (A) Configuration Package D P-Channel MOSFET -16 Single PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -12 Gate-source voltage a VGS ±8 Continuous drain current b TC = 25 °C TC = 125 °C Continuous source current (diode conduction) b Pulsed drain current c Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID -16 -16 IDM -64 IAS -16 EAS 12.8 TJ, Tstg Soldering recommendations (peak temperature) e, f V -16 IS PD UNIT 39 13 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount d SYMBOL LIMIT RthJA 81 RthJC 3.8 UNIT °C/W Notes a. Recommended maximum positive VGS ratings: +4V in continuous mode, +8V in PWM mode with ≤ 25% duty b. Package limited c. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % d. When mounted on 1" square PCB (FR4 material) e. See solder profile (www.vishay.com/doc?73257) f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-0970-Rev. B, 11-Oct-2021 Document Number: 63134 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405CENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = -250 μA -12 - - VGS(th) VDS = VGS, ID = -250 μA -0.45 -0.6 -1.0 Gate-source leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 VGS = 0 V VDS = -12 V - - -1 Zero gate voltage drain current IDSS VGS = 0 V VDS = -12 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -12 V, TJ = 175 °C - - -150 On-state drain current a ID(on) VGS = -4.5 V VDS ≥ -5 V 20 - - VGS = -4.5 V ID = -13.5 A - 0.0106 0.0150 Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = -4.5 V ID = -13.5 A, TJ = 125 °C - - 0.0205 VGS = -4.5 V ID = -13.5 A, TJ = 175 °C - - 0.0233 VGS = -2.5 V ID = -12 A - 0.0166 0.0220 - 41 - VDS = -6 V, ID = -13.5 A V nA μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = -6 V, f = 1 MHz Qg Qgs VGS = -8 V VDS = -6 V, ID = -4 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -6 V, RL = 1.5 Ω ID ≅ -4 A, VGEN = -8 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristic - 2260 3050 - 815 1100 - 630 850 pF - 53.6 81 - 4 - - 9.6 - 1.55 3.1 4.65 - 11 20 - 6 12 - 58 90 - 26 40 - - -64 A - -0.81 -1.1 V nC Ω ns b Pulsed current a ISM Forward voltage VSD IF = -10 A, VGS = 0 V Body diode reverse recovery time trr - 44 88 ns Body diode reverse recovery charge Qrr - 32 64 nC Reverse recovery fall time ta - 22 - Reverse recovery rise time tb - 22 - IRM(REC) - -1.2 - Body diode peak reverse recovery current IF = -5 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-0970-Rev. B, 11-Oct-2021 Document Number: 63134 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405CENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 50 10000 10000 VGS = 4.5 V thru 3.5 V VGS = 3.0 V VGS = 2.5 V 40 VGS = 2.0 V 100 20 1000 30 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 40 1st line 2nd line 20 TC = 25 °C 10 TC = 125 °C VGS = 1.5 V 0 0 2 4 6 8 TC = -55 °C 0 10 10 0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title Axis Title 1000 36 TC = 125 °C 24 100 12 0 2nd line RDS(on) - On-Resistance (Ω) 48 7 14 21 28 0.04 1000 0.03 VGS = 2.5 V 0.02 100 0.01 VGS = 4.5 V 0 10 0 10000 TC = -55 °C 1st line 2nd line 2nd line gfs - Transconductance (S) 0.05 10000 TC = 25 °C 10 0 35 10 20 40 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current Axis Title Axis Title Coss Crss 100 100 10 4 6 8 10 12 10000 7 ID = 4 A, VDS = 6 V 6 1000 5 1st line 2nd line 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) Ciss 1000 4 3 100 2 1 0 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S21-0970-Rev. B, 11-Oct-2021 50 8 10000 2 30 ID - Drain Current (A) 10 000 2nd line C - Capacitance (pF) 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) 60 0 100 1st line 2nd line 2nd line ID - Drain Current (A) 80 50 60 Document Number: 63134 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405CENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 0.6 10000 ID = 250 μA 0.4 ID = 13 A VGS = 4.5 V 1000 1.4 VGS = 2.5 V 1.1 100 2nd line VGS(th) - Variance (V) 1.7 1000 0.2 ID = 5 mA 0.0 100 -0.2 0.8 0.5 -0.4 10 -50 -25 0 25 50 10 -50 -25 75 100 125 150 175 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage Axis Title Axis Title -15 0.060 1000 1st line 2nd line 0.045 0.030 TJ = 150 °C 100 0.015 TJ = 25 °C 0.000 2nd line VDS - Drain-to-Source Voltage (V) 10000 10000 ID = 1 mA -17 1000 -19 1st line 2nd line 0.075 RDS(on) - On-Resistance (Ω) 1st line 2nd line 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 -21 100 -23 -25 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 100 10000 IDM limited 1 100 TJ = 25 °C 0.1 1 ms 10 10 ms 1000 100 ms, 1 s, 10 s, DC ID limited 1st line 2nd line 1000 2nd line ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) TJ = 150 °C 1 Limited by RDS(on) a 100 0.1 BVDSS limited TC = 25 °C, single pulse 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.01 10 0.1 1 10 VSD - Source-to-Drain Voltage (V) VDS - Drain-to-Source Voltage (V) Source Drain Diode Forward Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S21-0970-Rev. B, 11-Oct-2021 Document Number: 63134 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS405CENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63134. S21-0970-Rev. B, 11-Oct-2021 Document Number: 63134 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8W Case Outline E2 E4 H L K 1 Z 2 4 5 3 4 b 6 θ 3 D5 2 D2 2 7 D1 D 8 e 1 M θ D4 A2 W L1 θ E3 Backside view of single pad θ c A A1 2 E1 E DIM. Detail Z Notes 1 Inch will govern 2 Dimensions exclusive of mold gate burrs 3 Dimensions exclusive of mold flash and cutting burrs MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0 - 0.05 0 - 0.002 A2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D4 0.47 typ. D5 2.3 typ. 0.0185 typ. 0.090 typ. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.34 typ. 0.013 typ. e 0.65 BSC. 0.026 BSC K 0.86 typ. 0.034 typ. H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: C15-1530-Rev. B, 16-Nov-15 DWG: 6032 Revision: 16-Nov-15 Document Number: 64614 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000