SQS141ELNW-T1_GE3

SQS141ELNW www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® • TrenchFET® Gen IV power MOSFET 1212-8SLW D D D 7 8 D 6 5 • AEC-Q101 qualified • 100 % Rg and UIS tested • Wettable flank terminals • Low thermal resistance with 0.75 mm profile 3. 3 m m 1 3.3 3 4 S G Bottom View mm Top View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Marking code: Q062 G PRODUCT SUMMARY VDS (V) -40 RDS(on) () at VGS = 10 V 0.0100 ID (A) e 79 Configuration D P-Channel MOSFET Single ORDERING INFORMATION PowerPAK® 1212-8SLW SQS141ELNW (for detailed order number please see www.vishay.com/doc?79771) Package Lead (Pb)-free and halogen-free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -40 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current e TC = 125 °C Continuous source current (diode conduction) e Pulsed drain current a, e Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation a, d TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak ID 45 108 IDM 227 IAS 33 PD TJ, Tstg temperature) c V 79 IS EAS UNIT 54 119 39 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) d PCB mount b SYMBOL LIMIT RthJA 54 RthJC 1.26 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. As per on JESD51-14 e. Values based on RthJC and TC of 25 °C. Actual values achievable will dependent on the thermal characteristics of the complete system S23-0337-Rev. B, 29-May-2023 Document Number: 62033 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS141ELNW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA -40 - - VGS(th) VDS = VGS, ID = 250 μA -1.5 -2.0 -2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = -40 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = -40 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -40 V, TJ = 175 °C - - -150 On-state drain current a ID(on) VGS = -10 V VDS < -5 V -20 - - - 0.0107 0.0140 Gate-source threshold voltage VGS = -4.5 V Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VGS = -10 V ID = -10 A - 0.0074 0.0100 VGS = -10 V ID = -10 A, TJ = 125 °C - - 0.0160 VGS = -10 V ID = -10 A, TJ = 175 °C - - 0.0190 - 72 - VDS = -15 V, ID = -20 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = -25 V, f = 1 MHz Qg Qgs VGS = -10 V VDS = -20 V, ID = -5 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -20 V, RL = 8  ID  -2.5 A, VGEN = -10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristic - 5327 7458 - 347 486 - 328 460 - 94 141 - 17 - - 16 - 0.6 1.6 2.6 - 16 24 nC  - 5 9 - 54 81 - 6 9 - - 227 A - 0.82 1.1 V - 22 44 ns - 18 36 nC ns b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = -10 A, VGS = 0 V VDD = -32 V, IFM = -3.5 A, di/dt = 100 A/μs, R = 10 , L = 0.3 mH, pulse width = 2 μs Reverse recovery fall time ta - 14 - Reverse recovery rise time tb - 9 - IRM(REC) - -1.65 - Body diode peak reverse recovery current pF ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S23-0337-Rev. B, 29-May-2023 Document Number: 62033 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS141ELNW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 320 280 10000 10000 1000 VGS = -5 V 160 100 VGS = -4 V 80 210 1000 1st line 2nd line 240 2nd line ID - Drain Current (A) TC = 25 °C 1st line 2nd line 2nd line ID - Drain Current (A) VGS = -10 V thru -6 V 140 100 70 TC = 125 °C VGS = -3 V 10 0 0 2 4 6 8 TC = -55 °C 10 0 10 0 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 10 000 10000 10000 Ciss TC = -55 °C 1000 TC = 125 °C 60 100 30 10 0 0 20 40 60 80 1000 1st line 2nd line 90 2nd line C - Capacitance (pF) TC = 25 °C 1st line 2nd line 2nd line gfs - Transconductance (S) 8 VDS - Drain-to-Source Voltage (V) 120 1000 Coss 100 Crss 10 100 100 0 10 20 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Transconductance Capacitance 40 Axis Title Axis Title 1st line 2nd line 0.024 100 VGS = -4.5 V 0.012 ID = 4 A, VDS = 20 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) 0.048 0.036 10000 10 10000 0.060 2nd line RDS(on) - On-Resistance ( ) 6 4 100 2 VGS = -10 V 0 0 20 40 60 80 100 10 10 0 0 20 40 60 80 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S23-0337-Rev. B, 29-May-2023 100 Document Number: 62033 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS141ELNW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 TJ = 25 °C 1 100 0.1 0 0.2 0.4 0.6 0.8 1.0 1.9 VGS = -10 V 1000 1.6 VGS = -4.5 V 1.3 100 1.0 0.7 10 0.4 10 0.01 ID = -5 A 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) 10 TJ = 150 °C 10000 2.2 1st line 2nd line 2nd line IS - Source Current (A) 100 1.2 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature Axis Title Axis Title 0.04 10000 1.3 10000 0.4 ID = -5 mA 100 0.1 -0.2 0.03 1000 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance ( ) ID = -250 µA 0.7 1st line 2nd line 2nd line VGS(th) - Variance (V) 1.0 0.02 TJ = 150 °C 100 TJ = 125 °C 0.01 TJ = 25 °C 10 -0.5 -50 -25 0 25 50 10 0 0 75 100 125 150 175 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 10000 -45 ID = -1 mA -46 -47 1000 -48 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) -44 -49 -50 100 -51 -52 -53 10 -54 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S23-0337-Rev. B, 29-May-2023 Document Number: 62033 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS141ELNW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 1000 IDM limited ID limited 1000 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 µs 1 ms 1 Limited by RDS(on) 10ms, 100 ms, 100 1 s, 10 s, DC BVDSS limited 0.1 TC = 25 °C, single pulse 0.01 0.01 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S23-0337-Rev. B, 29-May-2023 Document Number: 62033 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS141ELNW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.2 0.1 0.1 100 0.05 0.02 Single pulse 0.01 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 10 1.00E+00 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Axis Title Duty Cycle = 0.5 1000 0.2 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.1 0.05 0.02 100 0.01 Single pulse 0.001 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 10 1.00E+03 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62033. S23-0337-Rev. B, 29-May-2023 Document Number: 62033 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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