SQS401ENW-T1_GE3

SQS401ENW www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -40 RDS(on) (Ω) at VGS = -10 V 0.029 RDS(on) (Ω) at VGS = -4.5 V 0.047 ID (A) • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -16 Configuration Single Package PowerPAK 1212-8W S PowerPAK® 1212-8W Single D 5 3. 3 m D 6 D 7 D 8 G m 1 m 3m 3. Top View 4 G Bottom View 3 S 2 S 1 S D P-Channel MOSFET Marking Code: Q023 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID -16 -16 IDM -64 IAS -26 EAS 33.8 TJ, Tstg Soldering Recommendations (Peak Temperature) e, f V -16 IS PD UNIT 62.5 20 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL LIMIT RthJA 81 RthJC 2.4 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS401ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = -250 μA -40 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = -40 V - - -1 - - -50 -150 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = -40 V, TJ = 125 °C VGS = 0 V VDS = -40 V, TJ = 175 °C - - On-State Drain Current a ID(on) VGS = -10 V VDS ≥ 5 V -20 - - VGS = -10 V ID = -12 A - 0.020 0.029 Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VGS = -10 V ID = -12 A, TJ = 125 °C - 0.030 0.043 VGS = -10 V ID = -12 A, TJ = 175 °C - 0.040 0.051 VGS = -4.5 V ID = -9 A - 0.035 0.047 - 12 - VDS = -15 V, ID = -7 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VGS = -4.5 V VDS = -20 V, f = 1 MHz VDS = -20 V, ID = -9.3 A f = 1 MHz td(on) tr td(off) VDD = -20 V, RL = 14.2 Ω ID ≅ -1.4 A, VGEN = -10 V, Rg = 1 Ω tf - 1565 1875 - 245 295 - 170 205 - 17.7 21.2 - 5.6 6.6 - 8.1 9.7 1.1 1.95 2.8 - 11 14 - 10 13 - 36.5 44 - 10.2 13 pF nC Ω ns Source-Drain Diode Ratings and Characteristic b Pulsed Current a ISM Forward Voltage VSD IF = -8.8 A, VGS = 0 V - - -64 A - -0.8 -1.1 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS401ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 10 V thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 VGS = 4 V 18 12 18 12 TC = 25 °C 6 6 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 6 1 3 4 5 Transfer Characteristics Output Characteristics 0.10 30 24 TC = -55 °C R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 2 VGS - Gate-to-Source Voltage (V) TC = 25 °C 18 12 TC = 125 °C 6 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 0 4 8 12 ID - Drain Current (A) 16 0 20 6 12 18 24 30 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 6 2500 VGS - Gate-to-Source Voltage (V) VDS = 20 V ID = 9.3 A C - Capacitance (pF) 2000 Ciss 1500 1000 Coss 500 5 4 3 2 1 Crss 0 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance S15-1309-Rev. A, 09-Jun-15 40 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67977 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS401ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 11 A 1.6 VGS = 10 V 10 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 1.8 1.4 VGS = 4.5 V 1.2 1.0 TJ = 150 °C 1 0.1 0.01 0.8 0.6 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 0.001 0.0 0.20 0.8 VGS(th) Variance (V) 1.1 0.15 0.10 TJ = 150 °C 0 1 0.6 0.8 1.0 1.2 ID = 250 µA 0.5 ID = 5 mA 0.2 -0.1 TJ = 25 °C 0.00 0.4 Source Drain Diode Forward Voltage 0.25 0.05 0.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature R DS(on) - On-Resistance (Ω) TJ = 25 °C -0.4 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10 -50 -25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 125 TJ - Temperature (°C) 150 175 Threshold Voltage VDS - Drain-to-Source Voltage (V) -40 ID = 1 mA -42 -44 -46 -48 -50 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS401ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 ID - Drain Current (A) ID Limited 100 μs 10 Limited by R DS(on)* 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS401ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67977. S15-1309-Rev. A, 09-Jun-15 Document Number: 67977 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8W Case Outline E2 E4 H L K 1 Z 2 4 5 3 4 b 6 θ 3 D5 2 D2 2 7 D1 D 8 e 1 M θ D4 A2 W L1 θ E3 Backside view of single pad θ c A A1 2 E1 E DIM. Detail Z Notes 1 Inch will govern 2 Dimensions exclusive of mold gate burrs 3 Dimensions exclusive of mold flash and cutting burrs MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0 - 0.05 0 - 0.002 A2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D4 0.47 typ. D5 2.3 typ. 0.0185 typ. 0.090 typ. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.34 typ. 0.013 typ. e 0.65 BSC. 0.026 BSC K 0.86 typ. 0.034 typ. H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: C15-1530-Rev. B, 16-Nov-15 DWG: 6032 Revision: 16-Nov-15 Document Number: 64614 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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