SQS414CENW-T1_GE3

SQS414CENW www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 1212-8W Single D 5 3. 3 m D 6 D 7 • TrenchFET® power MOSFET D 8 • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 m 1 m 3m 3. Top View 4 G Bottom View 3 S 2 S 1 S D Marking code: Q038 PRODUCT SUMMARY G VDS (V) 60 RDS(on) () at VGS = 10 V 0.0230 RDS(on) () at VGS = 4.5 V 0.0350 ID (A) Configuration Package S 18 Single N-Channel MOSFET PowerPAK 1212-8W ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 18 IS 18 55 IAS 16 EAS 12.8 TJ, Tstg Soldering recommendations (peak temperature) d, e V 15.5 IDM PD UNIT 33 11 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c SYMBOL LIMIT RthJA 81 RthJC 4.5 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S20-0769-Rev. A, 12-Oct-2020 Document Number: 78990 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS414CENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 60 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 10 V VDS  5 V 15 - - VGS = 10 V ID = 2.4 A - 0.0187 0.0230 VGS = 10 V ID = 2.4 A, TJ = 125 °C - - 0.0373 VGS = 10 V ID = 2.4 A, TJ = 175 °C - - 0.0462 VGS = 4.5 V ID = 1.8 A - 0.0282 0.0350 - 9.6 - - 620 870 - 257 360 - 17 24 Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance b RDS(on) gfs VDS = 15 V, ID = 2.4 A V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Gate-source charge c Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VDS = 25 V, f = 1 MHz Qg Qgs VGS = 10 V VDS = 30 V, ID = 5 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 30 V, RL = 15  ID  2 A, VGEN = 10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristic - 8.9 14 - 2.4 - - 0.9 - 0.19 0.38 0.57 - 8 15 pF nC  - 4 8 - 15 25 - 5 10 - - 55 A - 0.78 1.1 V ns b Pulsed current a ISM Forward voltage VSD IF = 2.4 A, VGS = 0 V Body diode reverse recovery time trr - 18 32 ns Body diode reverse recovery charge Qrr - 10.5 22 nC Reverse recovery fall time ta - 10 - Reverse recovery rise time tb - 8 - IRM(REC) - -1.1 - Body diode peak reverse recovery current IF = 2 A, di/dt = 100 A/μs ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0769-Rev. A, 12-Oct-2020 Document Number: 78990 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS414CENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 50 100 10000 10000 VGS = 10 V thru 5 V 20 100 10 1000 60 1st line 2nd line 1000 VGS = 4 V 30 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 40 TC = 125 °C 40 100 TC = 25 °C 20 VGS = 3 V TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 0.10 TC = 25 °C TC = 125 °C 24 16 8 10000 0.08 1000 0.06 0.04 1st line 2nd line TC = -55 °C 32 2nd line RDS(on) - On-Resistance (Ω) 2nd line gfs - Transconductance (S) 40 VGS = 4.5 V 100 0.02 VGS = 10 V 0 0 0 5 10 15 20 25 10 0 5 10 15 35 Transconductance On-Resistance vs. Drain Current Axis Title 100 Crss 10 10 30 40 50 60 10000 ID = 5 A VDS = 30 V 8 1000 6 1st line 2nd line 1st line 2nd line 100 2nd line VGS - Gate-to-Source Voltage (V) 1000 Coss 20 4 100 2 0 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S20-0769-Rev. A, 12-Oct-2020 40 10 10000 Ciss 2nd line C - Capacitance (pF) 30 ID - Drain Current (A) Axis Title 10 25 ID - Drain Current (A) 1000 0 20 10 Document Number: 78990 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS414CENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 VGS = 10 V ID = 10 A 1000 1.5 VGS = 4.5 V 1.2 100 0.9 0.6 0 25 50 77 ID = 1 mA 1000 74 71 100 68 65 10 -50 -25 10000 1st line 2nd line 1.8 2nd line VDS - Drain-to-Source Voltage (V) 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.1 10 75 100 125 150 175 -50 -25 0 25 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 0.15 10 TJ = 150 °C 1st line 2nd line 1000 1 100 0.1 TJ = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 10000 10000 0.12 1000 0.09 1st line 2nd line 100 2nd line IS - Source Current (A) 50 0.06 TJ = 150 °C 100 0.03 TJ = 25 °C 0.01 0 10 0 0.3 0.6 0.9 1.2 10 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.5 10000 100 10000 IDM limited ID = 5 mA -0.4 ID = 250 μA 100 100 μs 10 1000 ID limited 1 ms 1 10 ms Limited by RDS(on) 100 ms, 1 s, 10 s, DC a 100 0.1 -0.7 1st line 2nd line -0.1 2nd line ID - Drain Current (A) 1000 1st line 2nd line 2nd line VGS(th) - Variance (V) 0.2 BVDSS limited TC = 25 °C, single pulse -1.0 10 -50 -25 0 25 50 75 100 125 150 175 0.01 0.01 10 0.1 1 10 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Threshold Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S20-0769-Rev. A, 12-Oct-2020 Document Number: 78990 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS414CENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?78990. S20-0769-Rev. A, 12-Oct-2020 Document Number: 78990 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8W Case Outline E2 E4 H L K 1 Z 2 4 5 3 4 b 6 θ 3 D5 2 D2 2 7 D1 D 8 e 1 M θ D4 A2 W L1 θ E3 Backside view of single pad θ c A A1 2 E1 E DIM. Detail Z Notes 1 Inch will govern 2 Dimensions exclusive of mold gate burrs 3 Dimensions exclusive of mold flash and cutting burrs MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.97 1.04 1.12 0.038 0.041 0.044 A1 0 - 0.05 0 - 0.002 A2 0 - 0.13 0 - 0.005 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D4 0.47 typ. D5 2.3 typ. 0.0185 typ. 0.090 typ. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 E4 0.34 typ. 0.013 typ. e 0.65 BSC. 0.026 BSC K 0.86 typ. 0.034 typ. H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 typ. 0.005 typ. ECN: C15-1530-Rev. B, 16-Nov-15 DWG: 6032 Revision: 16-Nov-15 Document Number: 64614 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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