SQS411ENW
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Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 1212-8W Single
D
5
3.
D
6
D
7
• TrenchFET® power MOSFET
D
8
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
3
m
m
1
3.3
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
S
Marking code: Q035
G
PRODUCT SUMMARY
VDS (V)
-40
RDS(on) () at VGS = -10 V
0.0273
RDS(on) () at VGS = -4.5 V
0.0380
ID (A)
Configuration
Package
-16
D
Single
P-Channel MOSFET
PowerPAK 1212-8W
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-40
Gate-source voltage
VGS
± 20
Continuous drain current a
TC = 25 °C
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
-16
-16
IDM
-64
IAS
-19
PD
TJ, Tstg
Soldering recommendations (peak temperature) d, e
V
-16
IS
EAS
UNIT
18
39.5
13.2
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
SYMBOL
LIMIT
RthJA
81
RthJC
3.8
UNIT
°C/W
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S22-0273-Rev. C, 28-Mar-2022
Document Number: 77687
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SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance b
Forward transconductance b
VDS
VGS = 0 V, ID = -250 μA
-40
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -40 V
-
-
-1
VGS = 0 V
VDS = -40 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -40 V, TJ = 175 °C
-
-
-150
VGS = -10 V
VDS -5 V
-20
-
-
VGS = -10 V
ID = -8 A
-
0.0210
0.0273
VGS = -10 V
ID = -8 A, TJ = 125 °C
-
-
0.0405
VGS = -10 V
ID = -8 A, TJ = 175 °C
-
-
0.0480
VGS = -4.5 V
ID = -6 A
-
0.0290
0.0380
-
23
-
-
2455
3191
-
157
205
-
228
187
50
VDS = -15 V, ID = -7 A
V
nA
μA
A
S
Dynamic b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Turn-on delay time c
Rise time c
Turn-off delay time c
Fall time c
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VGS = -10 V
VDS = -25 V, f = 1 MHz
VDS = -20 V, ID = -2.5 A
f = 1 MHz
td(on)
tr
td(off)
VDD = -20 V, RL = 14.3
ID -1.4 A, VGEN = -10 V, Rg = 1
tf
-
38
-
6
8
-
7
10
2.5
4.2
6.7
-
10.5
13.7
-
3.0
3.9
-
39.6
51.5
-
6.4
8.4
pF
nC
ns
Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = -8 A, VGS = 0 V
-
-
-64
A
-
-0.8
-1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S22-0273-Rev. C, 28-Mar-2022
Document Number: 77687
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQS411ENW
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
50
10000
10000
50
VGS = -10 V thru -5 V
VGS = -4 V
20
100
1000
30
20
TC = 25 °C
100
10
10
TC = 125 °C
VGS = -3 V
0
1
2
3
4
TC = -55 °C
0
10
0
10
0
5
2
4
6
8
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
1000
1st line
2nd line
TC = 25 °C
16
100
TC = -55 °C
8
2nd line
RDS(on) - On-Resistance (Ω)
32
24
10
0.050
10000
40
2nd line
ID - Drain Current (A)
1st line
2nd line
1000
30
2nd line
ID - Drain Current (A)
40
1st line
2nd line
2nd line
ID - Drain Current (A)
40
0.040
0.030
VGS = -4.5 V
0.020
VGS = -10 V
0.010
TC = 125 °C
0
0.000
10
0
1
2
3
4
0
5
6
VGS - Gate-to-Source Voltage (V)
2nd line
TC = 125 °C
18
100
9
0
10
18
24
30
10000
ID = 6 A
VDS = 20 V
8
1000
6
1st line
2nd line
1000
27
2nd line
VGS - Gate-to-Source Voltage (V)
TC = 25 °C
1st line
2nd line
2nd line
gfs - Transconductance (S)
TC = -55 °C
12
4
100
2
0
10
0
8
16
24
32
ID - Drain Current (A)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Transconductance
Capacitance
S22-0273-Rev. C, 28-Mar-2022
30
10
10000
6
24
Axis Title
Axis Title
45
0
18
On-Resistance vs. Drain Current
Transfer Characteristics
36
12
ID - Drain Current (A)
2nd line
40
Document Number: 77687
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
1000
1000
100
Coss
10000
10
1000
TJ = 150 °C
1st line
2nd line
Ciss
2nd line
IS - Source Current (A)
100
1st line
2nd line
2nd line
C - Capacitance (pF)
10000
1
TJ = 25 °C
100
0.1
Crss
100
0.01
10
0
8
16
24
32
40
10
0
0.2
0.4
1.0
1.2
VSD - Source-to-Drain Voltage (V)
2nd line
Capacitance
Source Drain Diode Forward Voltage
Axis Title
Axis Title
0.8
10000
ID = -7 A
10000
0.5
1000
1st line
2nd line
1.4
VGS = -4.5 V
1.1
100
0.2
1000
-0.1
1st line
2nd line
VGS = -10 V
2nd line
VGS(th) Variance (V)
1.7
ID = -5 mA
-0.4
100
-0.7
ID = -250 μA
0.8
-1.0
0.5
-1.3
10
-50 -25
0
25
50
75 100 125 150 175
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
TJ - Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
Axis Title
54
0.06
0.05
1st line
2nd line
1000
0.04
TJ = 125 °C
0.03
100
0.02
TJ = 25 °C
0.01
0
10
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
S22-0273-Rev. C, 28-Mar-2022
2nd line
VDS - Drain-to-Source Voltage (V)
10000
0.07
2nd line
RDS(on) - On-Resistance (Ω)
0.8
VDS - Drain-to-Source Voltage (V)
2nd line
2.0
2nd line
RDS(on) - On-Resistance (Normalized)
0.6
ID = -1 mA
52
50
48
46
44
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
Document Number: 77687
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Axis Title
10000
100
IDM limited
1 ms 1000
ID limited
10 ms
100 ms
1 s, 10 s, DC
1
Limited by RDS(on) (1)
1st line
2nd line
2nd line
ID - Drain Current (A)
100 μs
10
100
0.1
BVDSS limited
TC = 25 °C
Single pulse
0.01
0.01
(1)
10
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
t1
1. Duty cycle, D = t
2
2. Per unit base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA (t)
Single pulse
4. Surface mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S22-0273-Rev. C, 28-Mar-2022
Document Number: 77687
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?77687.
S22-0273-Rev. C, 28-Mar-2022
Document Number: 77687
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
PowerPAK® 1212-8W Case Outline
E2
E4
H
L
K
1
Z
2
4
5
3
4
b
6
θ
3
D5
2
D2
2
7
D1
D
8
e
1
M
θ
D4
A2
W
L1
θ
E3
Backside view of single pad
θ
c
A
A1
2
E1
E
DIM.
Detail Z
Notes
1 Inch will govern
2 Dimensions exclusive of mold gate burrs
3 Dimensions exclusive of mold flash and
cutting burrs
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.97
1.04
1.12
0.038
0.041
0.044
A1
0
-
0.05
0
-
0.002
A2
0
-
0.13
0
-
0.005
b
0.23
0.30
0.41
0.009
0.012
0.016
c
0.23
0.28
0.33
0.009
0.011
0.013
D
3.20
3.30
3.40
0.126
0.130
0.134
D1
2.95
3.05
3.15
0.116
0.120
0.124
D2
1.98
2.11
2.24
0.078
0.083
0.088
D4
0.47 typ.
D5
2.3 typ.
0.0185 typ.
0.090 typ.
E
3.20
3.30
3.40
0.126
0.130
0.134
E1
2.95
3.05
3.15
0.116
0.120
0.124
E2
1.47
1.60
1.73
0.058
0.063
0.068
E3
1.75
1.85
1.98
0.069
0.073
0.078
E4
0.34 typ.
0.013 typ.
e
0.65 BSC.
0.026 BSC
K
0.86 typ.
0.034 typ.
H
0.30
0.41
0.51
0.012
0.016
0.020
L
0.30
0.43
0.56
0.012
0.017
0.022
L1
0.06
0.13
0.20
0.002
0.005
0.008
0°
-
12°
0°
-
12°
W
0.15
0.25
0.36
0.006
0.010
0.014
M
0.125 typ.
0.005 typ.
ECN: C15-1530-Rev. B, 16-Nov-15
DWG: 6032
Revision: 16-Nov-15
Document Number: 64614
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
www.vishay.com
7
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000