SUA70090E-E3

SUA70090E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. ID (A) 0.0093 at VGS = 10 V 42.8 0.0100 at VGS = 7.5 V 33 Qg (TYP.) 33 nC • ThunderFET® power MOSFET • Qgd / Qgs ratio < 1 optimizes switching characteristics • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Thin-Lead TO-220 FULLPAK APPLICATIONS D • Power supply - Secondary synchronous rectification • DC/DC converter GD • Power tools S G • Motor drive switch • DC/AC inverter Ordering Information: SUA70090E-E3 (lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID 34.2 IDM 120 Avalanche Current IAS 40 Single Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation a TC = 70 °C Operating Junction and Storage Temperature Range EAS PD V 42.8 Pulsed Drain Current (t = 100 μs) a UNIT 80 35.7 22.9 A mJ W TJ, Tstg -55 to +150 °C SYMBOL LIMIT UNIT RthJA 60 RthJC 3.5 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient (PCB Mount) b Junction-to-Case (Drain) °C/W Notes a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR4 material). S16-0163-Rev. A, 01-Feb-16 Document Number: 65438 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70090E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150 VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 50 - - A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS ID(on) RDS(on) gfs VGS = 10 V, ID = 20 A - 0.0077 0.0093 VGS = 7.5 V, ID = 15 A - 0.0083 0.0100 VDS = 15 V, ID = 10 A - 38 - - 1950 - V nA μA  S b Input Capacitance Ciss Output Capacitance Coss - 845 - Reverse Transfer Capacitance Crss - 54 - Total Gate Charge c Qg - 33 50 Gate-Source Charge c Gate-Drain Charge c VDS = 50 V, VGS = 10 V, ID = 20 A - 8.8 - - 7.5 - f = 1 MHz 0.7 3.5 7 - 15 30 VDD = 50 V, RL = 5  ID  10 A, VGEN = 10 V, Rg = 1  - 27 54 - 36 72 - 45 90 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 50 V, f = 1 MHz Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = -10 A, dI/dt = 100 A/μs - - 120 A - 0.8 1.5 V - 77 116 ns - 4.2 6.3 A - 145 365 nC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-0163-Rev. A, 01-Feb-16 Document Number: 65438 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70090E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 120 10000 100 60 VGS = 5 V 100 30 75 1000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 90 1st line 2nd line TC = 25 °C 50 100 TC = 125 °C 25 TC = -55 °C VGS = 4 V 0 10 0 1 2 3 4 0 5 10 0 2 4 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 0.015 10000 3600 10000 3000 1000 VGS = 7.5 V 0.009 VGS = 10 V 0.006 100 2nd line C - Capacitance (pF) 0.012 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 6 0.003 1000 2400 Ciss 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 10 V thru 6 V 1800 1200 100 Coss 600 Crss 0 0 10 30 60 90 120 10 0 20 80 VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title 10000 60 ID = 15 A VDS = 30 V 1000 1st line 2nd line 6 4 100 2 0 10 14 21 28 35 2nd line gfs - Transconductance (S) TC = -55 °C 8 7 100 Axis Title 10000 0 60 ID - Drain Current (A) 2nd line 10 2nd line VGS - Gate-to-Source Voltage (V) 40 45 TC = 25 °C 1000 30 TC = 125 °C 100 15 0 0 3.0 6.0 9.0 Qg - Total Gate Charge (nC) 2nd line ID - Drain Current (A) 2nd line Gate Charge Transconductance S16-0163-Rev. A, 01-Feb-16 1st line 2nd line 0 12.0 10 15.0 Document Number: 65438 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70090E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 ID = 20 A 10000 VGS = 10 V 10 VGS = 7.5 V 1.1 100 0.8 0.5 -25 0 25 50 75 0.1 100 0.01 10 0 100 125 150 0.2 0.4 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 3.6 10000 10000 ID = 250 μA 3.2 TJ = 150 °C 0.012 1000 2.8 1st line 2nd line 1000 0.018 2nd line VGS(th) (V) 0.024 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.6 TJ - Junction Temperature (°C) 2nd line 0.030 2.4 100 100 TJ = 25 °C 2.0 0.006 0 1000 TJ = 25 °C 0.001 10 -50 TJ = 150 °C 1 1st line 2nd line 1000 1.4 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 2nd line 10 1.6 10 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 1000 10000 ID = 250 μA Limited by IDM 100 1000 113 110 100 107 ID - Drain Current (A) 116 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 119 10 Limited by RDS(on)* 100 μs 1 ms 10 ms 1 DC, 10s 1s, 100 ms 0.1 104 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Drain Source Voltage vs. Junction Temperature S16-0163-Rev. A, 01-Feb-16 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 65438 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUA70090E www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 50 10000 1000 30 1st line 2nd line 2nd line ID - Drain Current (A) 40 20 100 10 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current De-Rating Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 PDM t1 0.1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJC = 3.5 °C/W 0.05 0.02 3. TJM - TA = PDMZthJA Single pulse 0.1 0.0001 100 (t) 4. Surface mounted 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65438. S16-0163-Rev. A, 01-Feb-16 Document Number: 65438 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK Thin Lead E ØP A A1 d2 d3 d1 D L1 b2 x 3 L bx3 c A2 e DIMENSIONS SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 4.30 4.70 0.169 0.185 A1 2.50 2.90 0.098 0.114 A2 2.40 2.80 0.094 0.110 b 0.60 0.80 0.024 0.031 b2 0.60 0.90 0.024 0.035 c - 0.60 - 0.024 D 8.30 8.70 0.327 0.342 d1 14.70 15.30 0.579 0.602 d2 2.90 3.10 0.114 0.122 d3 3.30 3.70 0.130 0.146 E 9.70 10.30 0.382 0.406 e 2.50 2.70 0.098 0.106 L 13.40 13.80 0.528 0.543 L1 1.00 2.80 0.039 0.110 ØP 3.00 3.40 0.118 0.134 ECN: E20-0684-Rev. D, 28-Dec-2020 DWG: 6021 Revision: 28-Dec-2020 Document Number: 62649 1 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000